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    10N60 MOSFET Search Results

    10N60 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    10N60 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    10N60G

    Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		10N60 10N60 O-220 O-220F1 O-220F2 QW-R502-119 10N60G mosfet 10a 600v 10N60G-TF3-T utc 10n60l PDF

    10N60

    Abstract: power mosfet 200A MOSFET 10n60 UTC10N60 Power MOSFET 50V 10A 10n60b equivalent data book of 10N60 mosfet mosfet 10a 600v MOSFET 10n60 Data sheet 10N60A
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		10N60 O-220 10N60 O-220F O-220F1 10N60L 10N60G QW-R502-119 power mosfet 200A MOSFET 10n60 UTC10N60 Power MOSFET 50V 10A 10n60b equivalent data book of 10N60 mosfet mosfet 10a 600v MOSFET 10n60 Data sheet 10N60A PDF

    tf 10n60

    Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		10N60 10N60 QW-R502-119 tf 10n60 MOSFET 10n60 equivalent+of+10N60+mosfet PDF

    10N60G TO-220F

    Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		10N60 10N60 QW-R502-119 10N60G TO-220F UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l PDF

    MOSFET 10n60

    Abstract: 10n60b 10N60 10N60A 10n60 mosfet g 10N60 f 10n60 c G 10N60 A equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 10N60 10N60L QW-R502-119 MOSFET 10n60 10n60b 10N60A 10n60 mosfet g 10N60 f 10n60 c G 10N60 A equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet PDF

    UTC10N60

    Abstract: utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10n60 QW-R502-119 10N60G-TQ2-T 10N60L-TQ2-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 10N60 QW-R502-119 UTC10N60 utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10N60G-TQ2-T 10N60L-TQ2-T PDF

    10N60G TO-220F

    Abstract: MOSFET 10n60 utc 10n60l 10N60 TO-220-F2 10N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 10N60G TO-220F MOSFET 10n60 utc 10n60l TO-220-F2 10N60G PDF

    10N60

    Abstract: 10n60b equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet MOSFET 10n60 mosfet 10a 600v mosfet 300V 10A datasheet 10N60A g 10N60 power mosfet 600v
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		10N60 O-220 10N60 O-220F O-220F1 10N60L 10N60G QW-R502-119 10n60b equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet MOSFET 10n60 mosfet 10a 600v mosfet 300V 10A datasheet 10N60A g 10N60 power mosfet 600v PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 10N60 10N60L QW-R502-119 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 10N60 O-220 O-220F O-220at QW-R502-119 PDF

    10N60L

    Abstract: 10N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 10N60L 10N60G PDF

    mosfet 10a 600v

    Abstract: MOSFET 10n60 10N60 10N60G 10N60G-TA3-T 10N60L tr 10n60 UTC10N60 utc 10n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 10N60 O-220 O-220F O-220F1 QW-R502-119 mosfet 10a 600v MOSFET 10n60 10N60G 10N60G-TA3-T 10N60L tr 10n60 UTC10N60 utc 10n60l PDF

    UTC10N60

    Abstract: 10N60G-TF1-T tr 10n60 10N60L-TQ2-T 10N60G TO-220F UTC 10N60L
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 UTC10N60 10N60G-TF1-T tr 10n60 10N60L-TQ2-T 10N60G TO-220F UTC 10N60L PDF

    MOSFET 10n60

    Abstract: TF 10N60 e MTN10N60FP 10N60 equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet mosfet 10a 600v CYStech Electronics
    Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN10N60FP Spec. No. : C406FP Issued Date : 2008.12.02 Revised Date :2009.04.20 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 0.75Ω ID : 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best


    Original     		MTN10N60FP C406FP MTN10N60FP O-220FP UL94V-0 MOSFET 10n60 TF 10N60 e 10N60 equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet mosfet 10a 600v CYStech Electronics PDF

    MOSFET 10n60

    Abstract: 10N60 MTN10N60E3 CYStech Electronics TF 10N60 e MOSFET 10n60 Data sheet ISD10* information storage device mtn10n60e
    Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN10N60E3 Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 0.75Ω ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best


    Original     		MTN10N60E3 C406E3 MTN10N60E3 O-220 UL94V-0 MOSFET 10n60 10N60 CYStech Electronics TF 10N60 e MOSFET 10n60 Data sheet ISD10* information storage device mtn10n60e PDF

    10N60A

    Abstract: IGBT 10N60 10N60 IXSH10N60 IXSH10N60A g 10N60
    Text: Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability VCES IC 25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		IXSH10N60 IXSH10N60A O-247 10N60A IGBT 10N60 10N60 IXSH10N60 IXSH10N60A g 10N60 PDF

    equivalent of 10N60 mosfet

    Abstract: MOSFET 10n60 10n60 3VD446600YL MOSFET 10n60 Data sheet
    Text: 3VD446600YL 3VD446600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD446600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in Ø 3 1 advanced silicon epitaxial planar technology; Advanced termination scheme to provide enhanced


    Original     		3VD446600YL 3VD446600YL O-220 10N60; equivalent of 10N60 mosfet MOSFET 10n60 10n60 MOSFET 10n60 Data sheet PDF

    8N65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


    Original     		IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65 PDF

    RX10N60

    Abstract: 10n60 transistor
    Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX10N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893


    Original     		RX10N60 Tel086-28-85198496 Fax086-28-8519893 RX10N60] 10N60 RX10N60, O-220AB, RX10N60 10n60 transistor PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    50n50c

    Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
    Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		50N50B 50N60B O-247 50N50 50N60 IXGH24N50BU1 IXGH24N60BU1 50n50c 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60 PDF

    MOSFET 10n60

    Abstract: 10N60A ir 10n60 10N60 IXTH10N60 IXTM10N60 10N60R 3N90R
    Text: I X Y S CORP IflE D • 4L,ab22b OOOObO'ï ? ■ □IXYS MAXIMUM RATINGS , 'T '2 ° 1 Parameter Sym. Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (Tc =25°C)


    OCR Scan     		4bab22b IXTH10N60, IXTM10N60 55Q/0 IXTH10N60 O-247 300ns, MOSFET 10n60 10N60A ir 10n60 10N60 10N60R 3N90R PDF

    10N60A

    Abstract: IGBT 10N60 10N60 IXGH10N60A IXGH10N60
    Text: □ IXYS Preliminary data L 0 W V CE,sa. I G B T IXGA/IXGP/IXGH10N60 IXGA/IXGP/IXGH10N60A High speed IGBT Vv CES ^C25 600 V 600 V 20 A 20 A V C E sat) 2.5 V 3.0 V T0-220AB (IXG P) Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		IXGA/IXGP/IXGH10N60 IXGA/IXGP/IXGH10N60A 150i2 O-247 10N60A IGBT 10N60 10N60 IXGH10N60A IXGH10N60 PDF

    IXTH10N60

    Abstract: IXTM10N60
    Text: CORP IflE D • 4bab22b □ IX Y S OOOObO'ï 7 ■ IXTH10N60, IXTM10N60 MAXIMUM RATINGS 10 AMPS, 600 V, 0.55Q/0.7S2 'T-201 -IS , Sym. Parameter Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) IXTH10N60 IXTM10N60 Unit 600 600 ±20 ±30 Vd0 Vdc


    OCR Scan     		4bab22b IXTH10N60, IXTM10N60 55Q/0 IXTH10N60 CHARACTE420 O-204 O-220 O-247 PDF