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    10N100P Search Results

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    10N100P Price and Stock

    IXYS Corporation IXFH10N100P

    MOSFETs 10 Amps 1000V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFH10N100P 515
    • 1 $7.9
    • 10 $6.95
    • 100 $4.89
    • 1000 $4.04
    • 10000 $4.04
    Buy Now
    Newark IXFH10N100P Bulk 172 1
    • 1 $8.13
    • 10 $6.95
    • 100 $5.04
    • 1000 $4.33
    • 10000 $4.33
    Buy Now
    TME IXFH10N100P 347 1
    • 1 $6.85
    • 10 $5.73
    • 100 $5.3
    • 1000 $4.68
    • 10000 $4.68
    Buy Now
    Chip 1 Exchange IXFH10N100P 7,246
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    New Advantage Corporation IXFH10N100P 4,467 1
    • 1 -
    • 10 -
    • 100 $7.4
    • 1000 $7.4
    • 10000 $6.9
    Buy Now
    Vyrian IXFH10N100P 202
    • 1 -
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    • 10000 -
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    Littelfuse Inc IXFH10N100P

    DiscMosfetN-CH HiPerFET-Polar TO-247AD | Littelfuse IXFH10N100P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS IXFH10N100P Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $6.26
    • 1000 $6.26
    • 10000 $6.26
    Get Quote

    10N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2


    OCR Scan
    N100U1 N100AU1 O-247 10N100U1 10N100AU1 4bflb22b PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    10N100U1

    Abstract: RG150
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES I C25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    N100U1 N100AU1 10N100U1 10N100AU1 10N100U1 RG150 PDF

    50n50c

    Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
    Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    50N50B 50N60B O-247 50N50 50N60 IXGH24N50BU1 IXGH24N60BU1 50n50c 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60 PDF