10JAN06 Search Results

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CLOCK GENERATOR 1HZ

Abstract: quartz kds M41ST84W AN1012 ABE smd
Contextual Info: M41ST84W 3.0/3.3V I2C Serial RTC with Supervisory Functions KEY FEATURES • ■ ■ ■ ■ AUTOMATIC BATTERY SWITCHOVER and DESELECT – Power-fail Deselect, VPFD = 2.60V nom – Switchover, VSO = 2.50V (nom) 400kHz I2C SERIAL INTERFACE 3.0/3.3V OPERATING VOLTAGE

AN609

Abstract: Si7970DP 74677
Contextual Info: Si7970DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si7983DP
Contextual Info: Si7983DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

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Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 JAN ,2006- LOC ALL RIGHTS RESERVED. E REVISIONS DIST B P NOTES: D C C /\ PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275

M41ST85W

Abstract: M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28
Contextual Info: M41ST85W 2 3.0/3.3V I C Combination Serial RTC, NVRAM Supervisor and Microprocessor Supervisor KEY FEATURES • ■ ■ ■ ■ AUTOMATIC BATTERY SWITCHOVER and WRITE PROTECT FOR: – Internal Serial RTC and – External low power SRAM LPSRAM 400kHz I2C SERIAL INTERFACE

usb female

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: WHITE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 1500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C

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USB FEMALE

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: WHITE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 1500 MATING CYCLES 0.92 A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. JAN ,2006- LOC ALL RIGHTS RESERVED. E REVISIONS DIST B P NOTES: D D /l\ PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275

JAN 7289

Abstract: 9506 transistor 3669 AN609
Contextual Info: Si7993DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: THIS DRAWING IS UNPUBLISHED. AA COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 3 2 - LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S A5 DF P LTR E DESCRIPTION REV PER 0H 14 - 0 2 0 8 - 0 4 DATE DWN APVD 03NO V05 TK CT D D C C

spec RG-174A

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. JAN ,2006- LOC ALL RIGHTS RESERVED. E DIST R E V IS IO N S B LTR NOTES: C /\ PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 /K 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275

AN609

Abstract: Si7962DP 10551
Contextual Info: Si7962DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

73711

Abstract: 6914 59219 AN609 Si7664DP 12866
Contextual Info: Si7664DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: SI7964DP
Contextual Info: SI7964DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].