TVS 36C
Abstract: diode zener 22c MPTE-45 ICTE 1N6373 1N6381 1N6382 1N6383 1N6384 1N6389
Text: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have
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1N6382
1N6389
ICTE-10C
ICTE-36C,
MPTE-45C)
r14525
1N6382/D
TVS 36C
diode zener 22c
MPTE-45
ICTE
1N6373
1N6381
1N6383
1N6384
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PDF
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1N6373
Abstract: 1N6381 1N6382 1N6383 1N6384 1N6389 ICTE-10C ICTE-36C MPTE-45C
Text: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have
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Original
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1N6382
1N6389
ICTE-10C
ICTE-36C,
MPTE-45C)
r14525
1N6382/D
1N6373
1N6381
1N6383
1N6384
ICTE-36C
MPTE-45C
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PDF
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1N6389
Abstract: 1N6373 1N6381 1N6382 1N6383 1N6384 ICTE-10C ICTE-36C MPTE-45C
Text: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have
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Original
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1N6382
1N6389
ICTE-10C
ICTE-36C,
MPTE-45C)
r14525
1N6382/D
1N6373
1N6381
1N6383
1N6384
ICTE-36C
MPTE-45C
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PDF
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10c zener
Abstract: No abstract text available
Text: Part: ICTE-10C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
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ICTE-10C
10x160Â
10x1000
10x1000Â
10c zener
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N6382 − 1N6389 Series ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have
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1N6382
1N6389
1N6382/D
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PDF
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marking code 6C8
Abstract: zener 5A1 zener 10D zener 5c1 zener 9c1 DIODES 33D Marking 4c7 4C7 marking code zener 4c3
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
marking code 6C8
zener 5A1
zener 10D
zener 5c1
zener 9c1
DIODES 33D
Marking 4c7
4C7 marking code
zener 4c3
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PDF
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33a zener
Abstract: No abstract text available
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2002/95/EC
MIL-STD-750,
33a zener
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PDF
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zener 4c3
Abstract: zener gdz zener gdz marking
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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GDZ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
DO-34
2012-REV
RB500V-40
zener 4c3
zener gdz
zener gdz marking
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PDF
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zener 6c2
Abstract: zener 4c3 zener 5c1 marking code 6C8 zener 9A1 zener 9c1 zener 5B6 DIODES 33D 6c2 zener 4C3 zener
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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Original
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GDZ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
2012-REV
RB500V-40
zener 6c2
zener 4c3
zener 5c1
marking code 6C8
zener 9A1
zener 9c1
zener 5B6
DIODES 33D
6c2 zener
4C3 zener
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PDF
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GLZ56
Abstract: zener diodes 5.1a 33b 56
Text: GLZ2.0~GLZ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA. • In compliance with EU RoHS 2002/95/EC directives
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Original
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GLZ56
MINI-MELF/LL-34
500mW
2002/95/EC
MIL-STD-750,
GLZ56
zener diodes 5.1a
33b 56
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PDF
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zener 4c3
Abstract: zener 5c1 ZENER CODE 51b zener 2a7 4C7 marking code zener 10D zener 4B7 20D22A DIODES 33D marking code 6C8
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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Original
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
RB500V-40
zener 4c3
zener 5c1
ZENER CODE 51b
zener 2a7
4C7 marking code
zener 10D
zener 4B7
20D22A
DIODES 33D
marking code 6C8
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PDF
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GT 1083
Abstract: 27C zener DS-16C SANYO 10c zener sanyo DZB30 "Zener Diodes" sanyo DS-16CSANYO
Text: Ordering number :EN653F DZB6.2 to DZB30 Sillicon Diffused Junction Type 1.0W Zener Diodes Features Package Dimensions • Plastic molded structure. · Voltage regulator use. · Power dissipation:P=1.0W. · Zener voltage:VZ=6.2 to 30V unit:mm 1083 [DZB6.2 to DZB30]
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EN653F
DZB30
DZB30]
GT 1083
27C zener
DS-16C SANYO
10c zener sanyo
DZB30
"Zener Diodes" sanyo
DS-16CSANYO
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PDF
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Untitled
Abstract: No abstract text available
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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Original
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500mW
2011/65/EU
MIL-STD-750,
2011-REV
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PDF
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48h diode zener
Abstract: diode zener 48H daily production report sheet
Text: ： REV E ： Doc. #： DATE 2009.05.14 ： QM Item OP OI II SPEC TECN The procedure of Hi-Rel V–QA1007 1. Purpose : For improve the quality and reliability of products and find the potential defect then take action. 2. Range: Rectron produce the product of diode rectifier and bridge rectifier
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QA1007
-202F
24HRS
ISO/TS16949
-QA10L9
-QA10J9)
-QA10K1)
48h diode zener
diode zener 48H
daily production report sheet
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PDF
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zener gdz
Abstract: No abstract text available
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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Original
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GDZ56
500mW
2011/65/EU
DO-34
MIL-STD-750,
DO-34
2013-REV
zener gdz
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PDF
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6b2 zener
Abstract: Marking 4c7 Tube 5A6 DIODES 33D
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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Original
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
6b2 zener
Marking 4c7
Tube 5A6
DIODES 33D
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PDF
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zener gdz marking
Abstract: No abstract text available
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives MECHANICAL DATA
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Original
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GDZ56
500mW
2011/65/EU
DO-34
MIL-STD-750,
DO-34
2014-REV
zener gdz marking
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PDF
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P/N146071
Abstract: No abstract text available
Text: P4KE SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR POWER 400 Watts 6.8 to 440 Volts BREAK DOWN VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O 0.034 0.86 0.028(0.71) • Excellent clamping capability
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Original
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2002/95/EC
DO-41
MIL-STD-750,
P/N146071
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PDF
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zener 4c3
Abstract: 10c1 4C16 4c18 4C3 zener diode 4C10 4C12 NKT4C11 10C242
Text: Silicon Zener Diodes Silicon Zener Diodes in DO-7 glass package Type Characteristics at T gmb= 2 5 °C ohms SZ @ 5m A x10 -4 /o c 70 .< 80) 70 ( < 80) 70 ( < 80) 50 (< 7 5 ) 40 ( < 70) 30 ( < 60) 10 (< 4 0 ) 4,8 ( < 10) 4,5 (< 8) 4 (< 7 ) 4 ,5 ( < 7 ) 4 ,8 ( < 1 0 )
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OCR Scan
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10C101
10C11
10C12T
10C131
10C15T
10C16T
10C181
10C202
10C222
10C242
zener 4c3
10c1
4C16
4c18
4C3 zener diode
4C10
4C12
NKT4C11
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PDF
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10C18
Abstract: 65c51 zener BZX85 3V3 5v.1 10c13 bzx 2v7 BZX85 C27 J-Z-2C-12 J-Z-2C-13 J-Z-2C-18
Text: S^C D • 7 ^ 3 3 7 S G S-THOMSON □□□57M7 S O THOMSON*CSF 59C 02747 zener chips pastilles de zener 500 mW 1.3 W VZT / <ZT *ZT Vfl Types min. max. M J-B2X 65 C 2V4 J-BZX 59 C 2V7 J-BZX 55 C 3VO J'BZX 55 C 3V3 J*BZX 55 C 3V6 J*BZX 55 C 3Vfl J-8ZX 55 C 4V3
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OCR Scan
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J-Z-10C-33
10C-36
J-Z-10C-39
JZ-10C-43
J-Z-100-47
J-Z-10C-56
JZ-10C-62
J-Z-10C68
J-Z-10C-75
JZ-10C-82
10C18
65c51
zener BZX85 3V3
5v.1
10c13
bzx 2v7
BZX85 C27
J-Z-2C-12
J-Z-2C-13
J-Z-2C-18
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD2423 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Features The transistor with a built-in zener diode o f surge absorb. Outline UPAK 2 ,4 1. 2. 3. 4. 1006 Base Collector Emitter Collector Flange (Typ) (Typi ¿ 3
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OCR Scan
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2SD2423
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PDF
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HZF10
Abstract: No abstract text available
Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208- 129B Z Rev 2 Features • W ide spectrum from • 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.
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OCR Scan
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ADE-208-
HZF30
HZF33
HZF36
HZF10
HZF11
HZF12
HZF13
HZF15
HZF16
HZF10
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PDF
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iY22
Abstract: Zener Diode LF marking ZY 20 DIODE zy47 zener ZY11 ZY12 ZY13 ZY15 ZY16 ZY200
Text: ZY11 - ZY200 VISHAY SILICON POWER ZENER DIODE /l i t e m ì i I POWER SEMICONDUCTOR/ Features • • • 2 Watt Power Dissipation Zener Voltages from 11V - 200V Graded per International E24 Standard t Mechanical Data DO-41 Case: Glass, DO-41 Leads: Solderable per MIL-STD-202,
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OCR Scan
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ZY200
DO-41
MIL-STD-202,
DS21406
ZY11-ZY200
iY22
Zener Diode LF marking
ZY 20 DIODE
zy47 zener
ZY11
ZY12
ZY13
ZY15
ZY16
ZY200
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PDF
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HZF10
Abstract: HZF6.8 ADE-208-129B
Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.
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OCR Scan
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ADE-208-129B
HZF27
HZF24
HZF22
HZF20
HZF18
HZF16
HZF15
HZF13
HZF12
HZF10
HZF6.8
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PDF
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