10AUG05 Search Results

Contextual Info: 7 THIS DRAWING IS UN PUBLISHED. COPYRIGHT 200 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. A L L RIGHTS LOC RESERVED. R E V IS IO N S DIST GP 00 LTR DESCRIPTIO N REL. AS PER EC 0 S 1 3 - 0 1 3 1 - 0 5 DATE DWN APVD 10AUG05 BL JG D D

Contextual Info: 4 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - - A LL RIGHTS RESERVED. GP REVISIO NS 00 DESCRIPTION [. -20 + 0 . 2 787 0 0 8 +. REL. AS PER EC 0 S 1 3 - 0 1 3 1 - 0 5 BL 10AUG05 JG MATERIAL: HOUSING - NYLON MOLDING COMPOUND,

GF1G

Abstract: DO-214BA JESD22-B102D J-STD-002B
Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent

Contextual Info: BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common e3 cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99-V, a dual

Contextual Info: BYV26DGP & BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 800 V, 1000 V IFSM 30 A trr 75 ns VF 1.3 V Tj max. 175 °C ed* t n e Pat DO-204AC (DO-15) * Glass Encapsulation technique is covered by

EGP20A

Abstract: EGP20D EGP20B EGP20C
Contextual Info: EGP20A thru EGP20G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 2.0 A VRRM 50 V to 400 V IFSM 75 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C d* e t n Pate DO-204AC (DO-15) * Glass Encapsulation

bt 2328

Abstract: 4-40 UNC-2B
Contextual Info: r 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 5 6 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. DIST LOC R E VIS IO N S GP 00 ALL RIGHTS RESERVED. LTR B L 7 .8 0 - 8 .0 5 [.3 1 2 + . 0 0 5 ] D . TERMINAL 1 IS LOCATED 5 5 5 2 7 2 6 - 1 ONLY.

BAV99V

Abstract: JE MARKING BAV99-V BAV99-V-GS08
Contextual Info: BAV99-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Fast switching speed • High conductance e3 • Surface mount package ideally suited for automatic insertion • Connected in series • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC

Contextual Info: FGP50B thru FGP50D Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics 5.0 A 100 V to 200 V IFSM 135 A trr 35 ns VF 0.95 V IR 5.0 µA Tj max. 175 °C Features • • • • • • • • ted* n e t Pa GP20 *Glass Encapsulation

EGP10B

Abstract: EGP10G
Contextual Info: EGP10A thru EGP10G Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C ed* t n e Pat *Glass Encapsulation technique is covered by

FGP10B

Abstract: FGP10D
Contextual Info: FGP10B thru FGP10D Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics 1.0 A VRRM 100 V to 200 V IFSM 30 A trr 35 ns VF 0.95 V IR 2.0 µA Tj max. 175 °C Features • • • • • • • ed* t n e Pat *Glass Encapsulation

GP20

Abstract: JESD22-B102D J-STD-002B
Contextual Info: FGP50B thru FGP50D New Product Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 5.0 A VRRM 100 V to 200 V IFSM 135 A trr 35 ns VF 0.95 V IR 5.0 µA Tj max. 175 °C ted* n e t Pa GP20 *Glass Encapsulation

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 ALL RIGHTS RESERVED. D i— LOC DIST AD 00 [3] L 1 [3] [3] 1 [3] [3] [3] [3] 1 [3] [3] 1 [3] [3] 1 [3] [3] 1 [3] [3] 1 [3] [3] L 1 [3] [3] 1 [3] [3] -1“ [3] [3] [3] [3] L L c^i -CJ-

AS11D

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST CM 54 LTR H M A T E R IA L: H O U S IN G : T H E R M O P L A S T IC POST: C O P P E R ALLO Y PO LYESTER, G LASS

BAV99-V

Contextual Info: BAV99-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Fast switching speed • High conductance e3 • Surface mount package ideally suited for automatic insertion • Connected in series • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC

ES2F

Contextual Info: ES2F & ES2G Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier Major Ratings and Characteristics IF AV 2.0 A VRRM 300 V, 400 V IFSM 50 A trr 35 ns VF 1.1 V Tj max. 150 °C DO-214AA (SMB) Features Mechanical Data • • • • • •

BAS16-V-GS08

Abstract: A6 MARKING
Contextual Info: BAS16-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Ultra fast switching speed e3 • Surface mount package ideally suited for automatic insertion • High conductance • Lead Pb -free component

Contextual Info: BYM12-50 thru BYM12-400, EGL41A thru EGL41G Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 400 V IFSM 30 A trr 50 ns VF 1.0 V, 1.25 V Tj max. 175 °C ed* t n e

EGP50A

Abstract: EGP50D
Contextual Info: EGP50A thru EGP50G Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 5.0 A VRRM 50 V to 400 V IFSM 150 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C ed* t n e Pat GP20 *Glass Encapsulation technique is covered by

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS D IS T GP 00 LTR B TYPICAL GROUNDING PAD 0 .0 3 2 + .003 -.001 2X SHIELD DWN BM WM 09A P R 08 REVISED PER E C O -08- 007327

DO-214BA

Abstract: JESD22-B102D J-STD-002B VISHAY MARKING RJ
Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns Tj max. 175 °C ed* t n e Pat

EGP30A

Contextual Info: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 400 V IFSM 125 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C d* e t n Pate GP20 *Glass Encapsulation technique is covered by

Vishay nobel

Abstract: KISD-6 Vishay nobel kisd load cell kis- 1-50 KN KISD load cell load cell kis- 1 KN load cell kis- 3
Contextual Info: Model KISD-6 Vishay Nobel Load Cell FEATURES • Capacity range: 50, 100, 200, 400, and 1000kN 11.2K, 22.5K, 45K, 90K, and 225K lb • Cylindrical shape for easy installation • High accuracy • ATEX approved for hazardous areas • High overload capacity

MARKING V32 SOT23

Abstract: BZT52C-V marking v6 zener diode zener diode Marking code v3 sod-123 single zener diode marking V14
Contextual Info: DZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are available in other case styles and configurations including: the dual diode common anode configuration e3 with type designation AZ23, the single diode SOT-23 case with the type designation