109 TRANSISTOR 33 DB Search Results

MRF5811

Abstract: MRF5811L TRANSISTOR SF 128 HP11590B HP11590
Contextual Info: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz

MRF5811LT1

Abstract: MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B
Contextual Info: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN S ilicon H igh-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz Low Intermodulation Distortion

MRF5811L

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz Low Intermodulation Distortion High Gain

MRF5811

Abstract: ADC IC 0808
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz

AT41586-TR1

Abstract: uj3a
Contextual Info: wem HEW LETT* ISSI PACKARD Low Cost General Purpose Transistors Technical Data AT-41586 Features • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB typical at 2 GHz • Low Cost Surface Mount

transistor 86 y 87

Contextual Info: WJ-EA41 sBasm « « . ‘Al m ! , MIS _wt * j4* Se» '- .i I; 1000 to 4000 MHz TO-5 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ WIDE BANDWIDTH: 1000 TO 4000 MHz MEDIUM OUTPUT POWER: +12 dBm TYP. LOW NOISE: 3.5 dB (TYP.) MEDIUM THIRD ORDER INTERCEPT POINT: +23 dBm (TYP.)

AT-60535

Contextual Info: A V A N T E K INC 20E D AVANTEK • UMlTbb 0QGbS13 T AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 d B typical at 4.0 GHz

AT00510

Abstract: at-00510 TRANSISTOR MAC 223
Contextual Info: HEWLETT-PACKARD/ H EW LETT Whn% w 'rm Cf l PNTS PACKARD b l E I> • AT-00510 4447564 427 Up to 4 GHz General Purpose Silicon Bipolar Transistor Features • • • • • 0010473 100 mil Package 16.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical GidB at 2.0 GHz

AVANTEK transistor

Contextual Info: avantek O in c SCIE » AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor avantek ^pS>-o£ Avantek 230 mil BeO Flange Package Features • High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi <jbat 4.0 GHz • High Gain at 1 dB Compression:

surface mount transistor A40

Abstract: transistor BC 157
Contextual Info: W J - A 4 / S M A 4 500 TO 4000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 500-4000 MHz HIGH GAIN -TWO STAGES: 14.5 dB TYP. HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) Outline Drawings A40 Specifications’* 0.450 n

avantek

Abstract: Avantek amplifier ic cd 4081 AVANTEK transistor Avantek rf amplifier Avantek power amplifier Avantek, Inc. AT-64023 Avantek, Inc Avantek S
Contextual Info: AVANTEK I NC 20E D AVANTEK • im n tb GOObSSfl AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor □ * Avantek 230 mil BeO Flange Package Features • High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi <jbat 4.0 GHz • High Gain at 1 dB Compression:

PH1819-30

Abstract: PH1819
Contextual Info: Afa Wireless Power Transistor PH 1819-30 30 Watt, 1.78-1.90 GHz Features Outline Drawing • Designed for Linear Amplifier Applications • -30 dBc Typ 3rd IMD at 30 Watts PEP • Common Emitter Class AB Operation • Internal Input and Output Impedance Matching

Contextual Info: HEWLETT-PACKARD/ • 7 1« CPIPNTS b lE HEW LETT mPPM P I> ■ MM475A4 ME? AT-00510 Up to 4 GHz General Purpose Silicon Bipolar Transistor a c k a rd Features • • • • • OOI OMTB 100 mil Package 16.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi hb at 2.0 GHz

SOT-143 MARKING 550

Abstract: AT41411 AT-41411 AT-41411-BLK AT-41411-TR1 S21E Transistor General Purpose Transistor
Contextual Info: Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth

Contextual Info: H E W L E T T - P A C K A R D / CI1PNTS m blE J> • 444 7 5S 4 O O Q ' P f H flS4 ■ H P A AT-01672 Up to 1 GHz General Purpose Silicon Bipolar Transistor HEW LETT PACKARD Features TO-72 Package • 24.0 dBm typical Pi <mat 1.0 GHz • 5.5 dB typical Gi dB at 1.0 GHz

TRANSISTOR BV 32

Abstract: Bv 42 transistor PH1617-30 K010 G177
Contextual Info: an AMP ZE comDanv r = Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 30W PHI 617-30 Features l l l l l Designed for Linear Amplifier Applications -30 dBc Typ 3rd IMD at 30 Watts PEP Common Emitter Class AB Operation Internal Input Impedance Matching Diffused Emitter Ballasting

Contextual Info: WJ-EA54-3 5 to 300 MHz TO-5 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ LOW NOISE: 2.7 dB TYP. VERY HIGH GAIN: 36.5 dB (TYP.) LOW COST VERY SMALL SIZE: TO-5 PACKAGE Outline Drawings Specifications* EA54-3 Guaranteed Typical Characteristics .360 ± 002 • {19.141.05)'

AT41586

Abstract: AT-41586 AT-41586-BLK AT-41586-TR1 S21E
Contextual Info: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option

Contextual Info: What HEW LETT* mitiM PACKARD Low C ost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount

AT-41586

Abstract: AT-41586-BLK AT-41586-TR1 S21E 41586
Contextual Info: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option

AT-41586

Abstract: AT-41586-BLK AT-41586-TR1 S21E
Contextual Info: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option

Contextual Info: What HEW LETT* mitiM PACKARD Low C ost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount

Contextual Info: AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Wtiol H EW LETT f t X fl PACKARD SOT-143 Plastic Features 0.92 0.036 0.78 (0.031) Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.8 dB typical at 2.0 GHz High Associated Gain: 18.0 dB typical at 1.0 GHz