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    109 TRANSISTOR 33 DB Search Results

    109 TRANSISTOR 33 DB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    109 TRANSISTOR 33 DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF5811

    Abstract: MRF5811L TRANSISTOR SF 128 HP11590B HP11590
    Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz


    Original     		PDF MRF5811LT1/D MRF5811LT1 MRF5811LT1 MRF5811LT1/D MRF5811 MRF5811L TRANSISTOR SF 128 HP11590B HP11590

    MRF5811LT1

    Abstract: MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B
    Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz


    Original     		PDF MRF5811LT1/D MRF5811LT1 MRF5811LT1/D* MRF5811LT1 MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B

    AT-41411

    Abstract: AT-41411-BLK AT-41411-TR1 S21E
    Text: Surface Mount Low Noise Silicon␣ Bipolar Transistor Chip Technical Data AT-41411 Features • Low Noise Figure: 1.4 dB Typical at 1.0␣ GHz 1.8 dB Typical at 2.0␣ GHz • High Associated Gain: 18.0 dB Typical at 1.0␣ GHz 13.0 dB Typical at 2.0␣ GHz


    Original     		PDF AT-41411 AT-41411 OT-143 OT-143 RN/50 AT-41411-BLK AT-41411-TR1 S21E

    SOT-143 MARKING 550

    Abstract: AT41411 AT-41411 AT-41411-BLK AT-41411-TR1 S21E Transistor General Purpose Transistor
    Text: Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth


    Original     		PDF AT-41411 OT-143 AT-41411 AT41411 RN/50 5965-8924E SOT-143 MARKING 550 AT-41411-BLK AT-41411-TR1 S21E Transistor General Purpose Transistor

    TRANSISTOR BV 32

    Abstract: Bv 42 transistor PH1617-30 K010 G177
    Text: an AMP ZE comDanv r = Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 30W PHI 617-30 Features l l l l l Designed for Linear Amplifier Applications -30 dBc Typ 3rd IMD at 30 Watts PEP Common Emitter Class AB Operation Internal Input Impedance Matching Diffused Emitter Ballasting


    Original     		PDF

    AT41586

    Abstract: AT-41586 AT-41586-BLK AT-41586-TR1 S21E
    Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option


    Original     		PDF AT-41586 AT-41586 AT41586 5965-8908E AT-41586-BLK AT-41586-TR1 S21E

    AT-41586

    Abstract: AT-41586-BLK AT-41586-TR1 S21E 41586
    Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option


    Original     		PDF AT-41586 AT-41586 5963-7303E 5965-8908E AT-41586-BLK AT-41586-TR1 S21E 41586

    AT-41586

    Abstract: AT-41586-BLK AT-41586-TR1 S21E
    Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option


    Original     		PDF AT-41586 AT-41586 AT-41586-BLK AT-41586-TR1 S21E

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN S ilicon H igh-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz Low Intermodulation Distortion


    OCR Scan     		PDF MRF5811LT1 18A-05, OT-143) MRF5811LT1

    MRF5811L

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz Low Intermodulation Distortion High Gain


    OCR Scan     		PDF MRF5811LT1 18A-05, OT-143) Vol98 MRF5811LT1 MRF5811L

    MRF5811

    Abstract: ADC IC 0808
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz


    OCR Scan     		PDF MRF5811LT1 MRF5811LT1 MRF5811 ADC IC 0808

    AT41586-TR1

    Abstract: uj3a
    Text: wem HEW LETT* ISSI PACKARD Low Cost General Purpose Transistors Technical Data AT-41586 Features • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB typical at 2 GHz • Low Cost Surface Mount


    OCR Scan     		PDF AT-41586 AT-41586 AT-41586-TR1 6903-73O3E AT41586-TR1 uj3a

    transistor 86 y 87

    Abstract: No abstract text available
    Text: WJ-EA41 sBasm « « . ‘Al m ! , MIS _wt * j4* Se» '- .i I; 1000 to 4000 MHz TO-5 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ WIDE BANDWIDTH: 1000 TO 4000 MHz MEDIUM OUTPUT POWER: +12 dBm TYP. LOW NOISE: 3.5 dB (TYP.) MEDIUM THIRD ORDER INTERCEPT POINT: +23 dBm (TYP.)


    OCR Scan     		PDF WJ-EA41 transistor 86 y 87

    AT-60535

    Abstract: No abstract text available
    Text: A V A N T E K INC 20E D AVANTEK • UMlTbb 0QGbS13 T AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 d B typical at 4.0 GHz


    OCR Scan     		PDF 0QGbS13 AT-60535 AT-60535 310-371-8717or310-371-8478

    surface mount transistor A40

    Abstract: transistor BC 157
    Text: W J - A 4 / S M A 4 500 TO 4000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 500-4000 MHz HIGH GAIN -TWO STAGES: 14.5 dB TYP. HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) Outline Drawings A40 Specifications’* 0.450 n


    OCR Scan     		PDF 50-ohm WJ-CA40 WJ-A40 surface mount transistor A40 transistor BC 157

    avantek

    Abstract: Avantek amplifier ic cd 4081 AVANTEK transistor Avantek rf amplifier Avantek power amplifier Avantek, Inc. AT-64023 Avantek, Inc Avantek S
    Text: AVANTEK I NC 20E D AVANTEK • im n tb GOObSSfl AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor □ * Avantek 230 mil BeO Flange Package Features • High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi <jbat 4.0 GHz • High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-64023 AT-64023 avantek Avantek amplifier ic cd 4081 AVANTEK transistor Avantek rf amplifier Avantek power amplifier Avantek, Inc. Avantek, Inc Avantek S

    PH1819-30

    Abstract: PH1819
    Text: Afa Wireless Power Transistor PH 1819-30 30 Watt, 1.78-1.90 GHz Features Outline Drawing • Designed for Linear Amplifier Applications • -30 dBc Typ 3rd IMD at 30 Watts PEP • Common Emitter Class AB Operation • Internal Input and Output Impedance Matching


    OCR Scan     		PDF PH1819-30 PH1819-30 PH1819

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ • 7 1« CPIPNTS b lE HEW LETT mPPM P I> ■ MM475A4 ME? AT-00510 Up to 4 GHz General Purpose Silicon Bipolar Transistor a c k a rd Features • • • • • OOI OMTB 100 mil Package 16.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi hb at 2.0 GHz


    OCR Scan     		PDF MM475A4 AT-00510 AT-00510

    Untitled

    Abstract: No abstract text available
    Text: H E W L E T T - P A C K A R D / CI1PNTS m blE J> • 444 7 5S 4 O O Q ' P f H flS4 ■ H P A AT-01672 Up to 1 GHz General Purpose Silicon Bipolar Transistor HEW LETT PACKARD Features TO-72 Package • 24.0 dBm typical Pi <mat 1.0 GHz • 5.5 dB typical Gi dB at 1.0 GHz


    OCR Scan     		PDF AT-01672 AT-01672 duced70

    Untitled

    Abstract: No abstract text available
    Text: WJ-EA54-3 5 to 300 MHz TO-5 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ LOW NOISE: 2.7 dB TYP. VERY HIGH GAIN: 36.5 dB (TYP.) LOW COST VERY SMALL SIZE: TO-5 PACKAGE Outline Drawings Specifications* EA54-3 Guaranteed Typical Characteristics .360 ± 002 • {19.141.05)'


    OCR Scan     		PDF WJ-EA54-3 50-ohm EA54-3

    Untitled

    Abstract: No abstract text available
    Text: What HEW LETT* mitiM PACKARD Low C ost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount


    OCR Scan     		PDF AT-41586 AT-41586

    Untitled

    Abstract: No abstract text available
    Text: What HEW LETT* mitiM PACKARD Low C ost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount


    OCR Scan     		PDF AT-41586 AT-41586

    Untitled

    Abstract: No abstract text available
    Text: AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Wtiol H EW LETT f t X fl PACKARD SOT-143 Plastic Features 0.92 0.036 0.78 (0.031) Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.8 dB typical at 2.0 GHz High Associated Gain: 18.0 dB typical at 1.0 GHz


    OCR Scan     		PDF AT-41411 OT-143

    chip die npn transistor

    Abstract: marking 4110 sot
    Text: What H E W L E T T * mLliM PACKARD Surface Mount Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz


    OCR Scan     		PDF AT-41411 sAT-41411 AT-41411 OT-143 techni411 Rn/50 chip die npn transistor marking 4110 sot