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    108 AMPLIFIER Search Results

    108 AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC High Output Current Operational Amplifier Visit Rochester Electronics LLC Buy

    108 AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    QBH-108

    Abstract: No abstract text available
    Text: Model # QBH-108 Available as: QBH-108, 4 Pin TO-8 T4 QBH-9-108, SMA Connectorized Laser Seal Housing (H1L) RF/Microwave Amplifier Features • Unconditionally Stable • Wide 5 to 300 MHz Bandwidth • Environmental Screening Available Technical Specifications


    Original     		PDF QBH-108 QBH-108, QBH-9-108, QBH-108

    PAL 010a

    Abstract: pal 005a 525-PA-003 C6070A-4 C6061A-4-LS P1001A-Z-125 C2000A-2 D182738 c1001b 525-CP-003
    Text: CONNECTORS AND ADAPTERS 25-Pair Doubled Ended Cables: Product Number Length Comcode 5 ft. 1.52 m 10 ft. (3.05 m) 15 ft. (4.57 m) 25 ft. (7.62 m) 50 ft. (15.25 m) 108 108 108 108 108 156 156 199 156 036 001 027 761 068 740 5 ft. (1.52 m) 10 ft. (3.05 m) 15 ft. (4.57 m)


    Original     		PDF 25-Pair D-182738 D-182739 D-182983 D-182977 D182847 D181755 D183016 AT-8502 PAL 010a pal 005a 525-PA-003 C6070A-4 C6061A-4-LS P1001A-Z-125 C2000A-2 D182738 c1001b 525-CP-003

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM PIN + PREAMP TO-46 PACKAGE HFD3081-108 FEATURES: Low electrical parasitic TO-46 package The HFD3081-108 use a high-performance GaAs PIN photo-detector packaged with a transimpedance amplifier designed to meet performance requirements


    Original     		PDF 850NM HFD3081-108 HFD3081-108 850nm. 155Mbps 1-866-MY-VCSEL

    1000w radio amplifier

    Abstract: FM power amplifier 1000W 1000w power amplifier fm amplifier 100w SOCKET HEAD CAP SCREWS FM1K-108 amplifier 1000w 11Pin
    Text: FM1K-108 PRELIMINARY 1000 W - FM Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and LDMOS device to enhance ruggedness and reliability. • • • • 87.5 ÷ 108 MHz 48 Volts Input/Output 50 Ω


    Original     		PDF FM1K-108 200mA 1000w radio amplifier FM power amplifier 1000W 1000w power amplifier fm amplifier 100w SOCKET HEAD CAP SCREWS FM1K-108 amplifier 1000w 11Pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM PIN + PREAMP TO-46 PACKAGE HFD3081-108 FEATURES: Low electrical parasitic TO-46 package The HFD3081-108 use a high-performance GaAs PIN photo-detector packaged with a transimpedance amplifier designed to meet performance requirements


    Original     		PDF 850NM HFD3081-108 HFD3081-108 850nm. 155Mbps 850TICAL 1-866-MY-VCSEL

    HFD3081-108

    Abstract: HFD PIN photodiode 850 nm NEP HFD3081 HFD PIN photodiode 850 nm pin photodiode 1550nm sensitivity 10gbps HFD 3081 850NM fiber optics ADVANCED COMMUNICATION system pin photodetector 2.5Gbps led 850nm 155mbps
    Text: DATA SHEET 2.5GBPS 850NM PIN + PREAMP TO-46 PACKAGE HFD3081-108 FEATURES: Low electrical parasitic TO-46 package The HFD3081-108 use a high-performance GaAs PIN photo-detector packaged with a transimpedance amplifier designed to meet performance requirements


    Original     		PDF 850NM HFD3081-108 HFD3081-108 850nm. 155Mbps 85TICAL 1-866-MY-VCSEL HFD PIN photodiode 850 nm NEP HFD3081 HFD PIN photodiode 850 nm pin photodiode 1550nm sensitivity 10gbps HFD 3081 fiber optics ADVANCED COMMUNICATION system pin photodetector 2.5Gbps led 850nm 155mbps

    HFD3180-103

    Abstract: 10Gbps photodiode 850 1310nm ROSA 10Gbps 1550nm photodiode nep 850nm ROSA 850NM HFD3381-108 1550nm photodiode 2GHz
    Text: DATA SHEET 2.5GBPS 850NM PIN + PREAMP SC ROSA PACKAGE HFD3381-108 High performance GaAs PIN photodiode with separate transimpedance amplifier The HFD3381-108 use a high-performance GaAs PIN photo-detector packaged with a transimpedance amplifier designed to meet performance requirements


    Original     		PDF 850NM HFD3381-108 HFD3381-108 850nm. HFE439x HFE438x 1-866-MY-VCSEL HFD3180-103 10Gbps photodiode 850 1310nm ROSA 10Gbps 1550nm photodiode nep 850nm ROSA 1550nm photodiode 2GHz

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM PIN + PREAMP LC ROSA PACKAGE HFD3180-108 High performance GaAs PIN photodiode with separate transimpedance amplifier The HFD3180-108 use a high-performance GaAs PIN photo-detector packaged with a transimpedance amplifier designed to meet performance requirements


    Original     		PDF 850NM HFD3180-108 HFD3180-108 850nm. HFE419x 155Mbps 1-866-MY-VCSEL

    HFD3180-108

    Abstract: PIN photodiode chip 850nm 2.5gbps HFD3180-103 led 850nm 155mbps 850nm sensitivity dB photodiode pin pin photodetector 2.5Gbps PIN photodiode 1550nm 2.5gbps photodiode pin 850nm 155mbps 1310nm ROSA 10Gbps 850nm ROSA
    Text: DATA SHEET 2.5GBPS 850NM PIN + PREAMP LC ROSA PACKAGE HFD3180-108 High performance GaAs PIN photodiode with separate transimpedance amplifier The HFD3180-108 use a high-performance GaAs PIN photo-detector packaged with a transimpedance amplifier designed to meet performance requirements


    Original     		PDF 850NM HFD3180-108 HFD3180-108 850nm. HFE419x 155Mbps 1-866-MY-VCSEL PIN photodiode chip 850nm 2.5gbps HFD3180-103 led 850nm 155mbps 850nm sensitivity dB photodiode pin pin photodetector 2.5Gbps PIN photodiode 1550nm 2.5gbps photodiode pin 850nm 155mbps 1310nm ROSA 10Gbps 850nm ROSA

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM PIN + PREAMP LC ROSA PACKAGE HFD3180-108 High performance GaAs PIN photodiode with separate transimpedance amplifier The HFD3180-108 use a high-performance GaAs PIN photo-detector packaged with a transimpedance amplifier designed to meet performance requirements


    Original     		PDF 850NM HFD3180-108 HFD3180-108 850nm. HFE419x 155Mbps 1-866-MY-VCSEL

    all mosfet power amplifier

    Abstract: 300w amplifier mosfet amplifier "RF MOSFET" 300W 300w fm amplifier FM500-108 500 W POWER AMPLIFIER power amplifier mosfet 300w rf amplifier Rf power transistor mosfet
    Text: FM500-108 500 W FM RF Power Amplifier Designed for FM transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • • • MOSFET Amplifier BW: 87.5 - 108 MHz


    Original     		PDF FM500-108 40W267 all mosfet power amplifier 300w amplifier mosfet amplifier "RF MOSFET" 300W 300w fm amplifier FM500-108 500 W POWER AMPLIFIER power amplifier mosfet 300w rf amplifier Rf power transistor mosfet

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM PIN + PREAMP SC ROSA PACKAGE HFD3381-108 High performance GaAs PIN photodiode with separate transimpedance amplifier The HFD3381-108 use a high-performance GaAs PIN photo-detector packaged with a transimpedance amplifier designed to meet performance requirements


    Original     		PDF 850NM HFD3381-108 HFD3381-108 850nm. HFE439x HFE438x 1-866-MY-VCSEL

    BLF278 equivalent

    Abstract: an power amplifier 108 mhz blf278 108 amplifier FM301-108 BLF278 power amplifier blf278 300w amplifier 300w fm amplifier SOCKET HEAD CAP SCREWS application MOSFET transmitters fm
    Text: FM301-108 PRELIMINARY 300 W - FM Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 87.5 ÷ 108 MHz 48 Volts Input/Output 50 Ω


    Original     		PDF FM301-108 BLF278 GR01560 BLF278 equivalent an power amplifier 108 mhz blf278 108 amplifier FM301-108 power amplifier blf278 300w amplifier 300w fm amplifier SOCKET HEAD CAP SCREWS application MOSFET transmitters fm

    FM300-108

    Abstract: FM Amplifier 300w FM300 300w fm amplifier H101X 300w rf amplifier RF GAIN LTD
    Text: FM300-108 300 W - FM Power Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 87.5 - 108 MHz 48 Volts Input/Output 50 Ω


    Original     		PDF FM300-108 40W267 FM300-108 FM Amplifier 300w FM300 300w fm amplifier H101X 300w rf amplifier RF GAIN LTD

    AN3263

    Abstract: H101X MRF6V2300 FM Amplifier 300w MRF6V MRF6V2300NBR1 MRF6V2300N 300w fm amplifier FM310-108
    Text: FM310-108 300 W - FM Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and LDMOS device to enhance ruggedness and reliability. • • • • 87.5 ÷ 108 MHz 48 Volts Input/Output 50 Ω Pout : 300 W min


    Original     		PDF FM310-108 MRF6V2300NBR1 AN3263 H101X MRF6V2300 FM Amplifier 300w MRF6V MRF6V2300N 300w fm amplifier FM310-108

    transistor 1x 6 pin

    Abstract: RAYTHEON CDMA2000-1X CDMA2000-1XRTT RMPA1759 RMPA1759-108 108 mhz rf linear board
    Text: RF Components RMPA1759-108 Korean PCS 3V CDMA & CDMA2000-1X Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1759-108 power amplifier module PAM is designed for Korean CDMA and CDMA2000-1X personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50


    Original     		PDF RMPA1759-108 CDMA2000-1X CDMA2000-1X transistor 1x 6 pin RAYTHEON CDMA2000-1XRTT RMPA1759 108 mhz rf linear board

    m16811

    Abstract: u48 PMU ICS952501 BT135 1001 dl pwm quanta T210P 12Bst MAX8863SEUK T quanta computer
    Text: 1 2 3 4 5 6 CPUCLK+ CPUCLK- Power - Source Control HCLK+ HCLK- CPU CORE Power PAGE 41. PAGE 38. PCLK_MPCI ICS952501 (PLL202-108) PCLK_1394 MCLK PCLK_591 A PCLK_SB CLOCKS buffer (ICS93735) (PLL102-108) GCLK PAGE 40. PCI BUS Routing Table =


    Original     		PDF ICS952501) PLL202-108) M1681 M1563 USB20 ICS93735) PLL102-108) ISL6207 1U25V m16811 u48 PMU ICS952501 BT135 1001 dl pwm quanta T210P 12Bst MAX8863SEUK T quanta computer

    H88-108-600

    Abstract: No abstract text available
    Text: COUPLER 90˚ HYBRID 600 WATT DATA SHEET SHEET 1 OF 3 Dwg H88-108-600 PART SERIES: H88-108-600 FEATURES EN 13-3225 Revision- APPLICATIONS Mechanically Robust Caseless Package High Power Low Insertion Loss High Isolation High Reliability Broadcast Transmitters


    Original     		PDF H88-108-600 423F100 2Y194 H88-108-600

    hf6-56

    Abstract: hf6 56 relay hf6 AXICOM Relay Ft2 AXICOM hf6 Relay Diode HF3 1462052-6 axicom w11 AXICOM Relay HF relay
    Text: AXICOM Telecom-, Signal and RF Relays HF6 Relay 108-98022 • Nov. 07 Rev. A • ECOC: JM10 AXICOM Telecom-, Signal and RF Relays 108-98022 HF6 Relay Disclaimer While Tyco Electronics has made every reasonable effort to ensure the accuracy of the information in this datasheet,


    Original     		PDF CH-8804 D-13629 CZ-541 hf6-56 hf6 56 relay hf6 AXICOM Relay Ft2 AXICOM hf6 Relay Diode HF3 1462052-6 axicom w11 AXICOM Relay HF relay

    CB-108

    Abstract: tba 790 amplificateur BF TBA TBA790NB amplificateur BF TBA 790
    Text: CB-108 -T CB-135 CB-109 AF amplifiers continued Amplificateurs B F (suite) Applications Ap plicatio n s Type Type S uffix Suffixe CB-108 VCC CC C CB-108 NC PR -1 ?R ^ Ob u s po lr r ^ CC R FBA 790 ND Page Page 6- 1 5 V = 8 mA - A F am plifier A m p lifica te u r B F


    OCR Scan     		PDF CB-108 CB-135 CB-109 CB-135 CB-108 TBA79Â tba 790 amplificateur BF TBA TBA790NB amplificateur BF TBA 790

    LM308

    Abstract: lm108 LM308N LM308H LM308 Raytheon 108A FET LM108A LM308DE LM108AH LM208AH
    Text: 108/108A 208/208A 308/308A Precision Operational Amplifiers GENERAL DESCRIPTION DESIGN FEATURES The LM 108A/LM 108, LM 208A/LM 208 and LM308A/LM308 are Super Beta operational amplifiers fabricated on single silicon chips using the planar epitaxial process.


    OCR Scan     		PDF 108/108A 208/208A 308/308A LM108A/LM108, LM208A/LM208 LM308A/LM308 08A/LM108 LM108A/LM108 LM308 lm108 LM308N LM308H LM308 Raytheon 108A FET LM108A LM308DE LM108AH LM208AH

    BC109

    Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors
    Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.


    OCR Scan     		PDF BC109 BC178 BC179. 100mA Jun108 bc107 BC 107 BC108 bc 230 BC179 bc 750 BC-1096 bc audio transistors

    ZO 109

    Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230
    Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.


    OCR Scan     		PDF BC109 BC177, BC178 BC179. ZO 109 BC 107 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230

    dm75452

    Abstract: DM7830 LM75452
    Text: AN-108 National Sem iconductor Application N ote 108 Bill Fow ler Transmission Line Characteristics INTRODUCTION Digital systems generally require the transmission of digital signals to and from other elements of the system. The com­ ponent wavelengths of the digital signals will usually be


    OCR Scan     		PDF AN-108 DS7830, DS7820A dm75452 DM7830 LM75452