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    105NS Search Results

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    105NS Price and Stock

    Amphenol Nexus MS-105NS

    MICROPHONE SWITCH
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    DigiKey MS-105NS Bag 1
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    CDM Electronics MS-105NS 1
    • 1 $17.47
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    Amphenol Nexus TJS-105NS

    TELEPHONE JACK SWITCH
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    DigiKey TJS-105NS Bag 1
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    CDM Electronics TJS-105NS 1
    • 1 $78.41
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    Sharp Microelectronics of the Americas PC81105NSZ

    OPTOISOLATOR 5KV 1CH TRANS 4-DIP
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    DigiKey PC81105NSZ Tube 2,000
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    CUI Inc SWI10-5-N-ST

    AC/DC WALL MOUNT ADAPTER 5V 10W
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    STMicroelectronics STL105NS3LLH7

    MOSFET N-CH 30V 105A POWERFLAT
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    DigiKey STL105NS3LLH7 Cut Tape 1
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    STL105NS3LLH7 Digi-Reel 1
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    STL105NS3LLH7 Reel 3,000
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    EBV Elektronik STL105NS3LLH7 21 Weeks 3,000
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    105NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PC28F256P33

    Abstract: JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74
    Text: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read


    Original     		P33-65nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KByte PC28F256P33 JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74 PDF

    pc28f00ap33

    Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
    Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer


    Original     		P33-65nm 512-Mbit 512-Mbit, 100ns 16-word 52MHz 105ns 512-word 46MByte/s pc28f00ap33 JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512 PDF

    RC28F256P33BF

    Abstract: JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E
    Text: Numonyx Flash Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,


    Original     		P33-65nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KBcument; RC28F256P33BF JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E PDF

    pc28f00ap30

    Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
    Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode


    Original     		P30-65nm 512-Mbit, 100ns 105ns 16-word 52MHz 110ns 512-word 46MByte/s pc28f00ap30 JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF PDF

    TSOP 48 pin flash gbit

    Abstract: JS28F00AP33BF 1FFC000
    Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features  High performance:  TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer


    Original     		P33-65nm 512-Mbit 512-Mbit, 100ns 16-word 52MHz 105ns 512-word 46MByte/s TSOP 48 pin flash gbit JS28F00AP33BF 1FFC000 PDF

    pc28f00ap30

    Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
    Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode


    Original     		P30-65nm 512-Mbit, 100ns 105ns 16-word 52MHz 110ns 512-word 46MByte/s pc28f00ap30 JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30 PDF

    JS28F256P33

    Abstract: PC28F256P33 PC28F256P33BF RC28F256P33 RC28F256P33BF JS28F256P33BF JS28F256P33TF PC48F4400P0TB0E PC28F256P33B PC28F256P33TF
    Text: Numonyx AxcellTM Flash Memory P3365nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,


    Original     		P3365nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KByte JS28F256P33 PC28F256P33 PC28F256P33BF RC28F256P33 RC28F256P33BF JS28F256P33BF JS28F256P33TF PC48F4400P0TB0E PC28F256P33B PC28F256P33TF PDF

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX6400D2LL/1G 1GB 128M x 64-Bit PC2-6400 CL4 240-Pin DIMM SPECIFICATIONS Clock Cycle Time tCK CL=5 3ns (min.) / 8ns (max.) Row Cycle Time (tRC) 54ns (min.) Refresh to Active/Refresh Command Time (tRFC) 105ns Row Active Time (tRAS)


    Original     		KHX6400D2LL/1G 64-Bit PC2-6400 240-Pin 105ns 000ns 1024MB) DDR2-800 PDF

    numonyx MLC

    Abstract: te28f256p33tf PC28F256P33 JS28F256P33 PC48F4400P0TB0E
    Text: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read


    Original     		P33-65nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KByte numonyx MLC te28f256p33tf PC28F256P33 JS28F256P33 PC48F4400P0TB0E PDF

    strataflash p33

    Abstract: PC28F PC28F256P33 JS28F256P33B
    Text: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read


    Original     		P33-65nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KByte strataflash p33 PC28F PC28F256P33 JS28F256P33B PDF

    PC28F00AP33BF

    Abstract: L 1123 1FF4000
    Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit, 1-Gbit Monolithic Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read


    Original     		P33-65nm 512-Mbit, 105ns 16-word 52MHz 512-word 46MByte/s 32-KByte P33-65nm PC28F00AP33BF L 1123 1FF4000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read


    Original     		P33-65nm 512-Mbit 105ns 16-word 52MHz 512-word 46MByte/s 512Mbit, 32-KByte PDF

    JS28F512P33BF

    Abstract: JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF
    Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read


    Original     		P33-65nm 512-Mbit 105ns 16-word 52MHz 512-word 46MByte/s 512Mbit, 32-ing JS28F512P33BF JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF PDF

    k3314

    Abstract: 2SK3314 SC-65 jeita sc-65
    Text: 2SK3314 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK3314 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : trr = 105ns (標準) z 逆回復時間が速い。


    Original     		2SK3314 105ns 10VID SC-65 2-16C1B VDD400V, K3314 k3314 2SK3314 SC-65 jeita sc-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX6400D2/1G 1GB 128M x 64-Bit PC2-6400 CL5 240-Pin DIMM SPECIFICATIONS Clock Cycle Time tCK CL=5 3ns (min.) / 8ns (max.) Row Cycle Time (tRC) 54ns (min.) Refresh to Active/Refresh Command Time (tRFC) 105ns Row Active Time (tRAS)


    Original     		KHX6400D2/1G 64-Bit PC2-6400 240-Pin 105ns 000ns 1024MB) DDR2-800 PDF

    PC28F00AP

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Embedded Memory P33-65nm 512-Mbit, 1-Gbit Monolithic Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode


    Original     		P33-65nm) 512-Mbit, 105ns 16-word 52MHz 512-word 46MByte/s 128-KByte P33-65nm PC28F00AP PDF

    IXYX

    Abstract: IXYX140N90C3
    Text: Preliminary Technical Information IXYK140N90C3 IXYX140N90C3 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBTs for 20-50 kHz Switching = = ≤ = 900V 140A 2.7V 105ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXYK140N90C3 IXYX140N90C3 IC110 105ns O-264 140N90C3 3-26-12-A IXYX IXYX140N90C3 PDF

    k3314

    Abstract: 2SK3314 SC-65 jeita sc-65
    Text: 2SK3314 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK3314 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : trr = 105ns (標準) z 逆回復時間が速い。


    Original     		2SK3314 105ns 10VID SC-65 2-16C1B K3314 2002/95/EC) k3314 2SK3314 SC-65 jeita sc-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX23L1610 3.3 Volt 16-Mbit 2M x 8 / 1M x 16 Mask ROM ORDER INFORMATION FEATURES • Bit organization - 2M x 8 (byte mode) - 1M x 16 (word mode) • Fast access time - 105ns (max.)@3.3V±10% - 100ns (max.)@3.3V±5% • Current - Operating:25mA - Standby:15uA


    Original     		MX23L1610 16-Mbit 105ns 100ns 500mil) 600mil) MX23L1610MC-10 MX23L1610MC-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) IXYK140N90C3 IXYX140N90C3 High-Speed IGBTs for 20-50 kHz Switching = = ≤ = 900V 140A 2.7V 105ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IC110 IXYK140N90C3 IXYX140N90C3 105ns O-264 140N90C3 3-26-12-A PDF

    MX23L1610

    Abstract: MX23L1610MC-10 MX23L1610MC-12 MX23L1610MC-15 MX23L1610PC-10 MX23L1610PC-12 MX23L1610PC-15 MX23L1610TC-10 105ns
    Text: Introduction Selection Guide MX23L1610 16M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 2M x 8 (byte mode) - 1M x 16 (word mode) • Fast access time - 105ns (max.)@3.3V±10% - 100ns (max.)@3.3V±5% • Current - Operating:25mA


    Original     		MX23L1610 16M-BIT 105ns 100ns 500mil) 600mil) MX23L1610MC-10 MX23L1610MC-11 MX23L1610MC-12 MX23L1610 MX23L1610MC-10 MX23L1610MC-12 MX23L1610MC-15 MX23L1610PC-10 MX23L1610PC-12 MX23L1610PC-15 MX23L1610TC-10 105ns PDF

    Untitled

    Abstract: No abstract text available
    Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode


    Original     		P30-65nm 512-Mbit, 100ns 105ns 16-word 52MHz 110ns 512-word 46MByte/s PDF

    KHX6400D2

    Abstract: DDR2 Mechanical Dimensions DDR2 240 pin Mechanical Dimensions
    Text: Memory Module Specifications KHX6400D2LLK2/2G 2GB 1GB 128M x 64-Bit x 2 pcs. PC2-6400 CL4 240-Pin DIMM Kit SPECIFICATIONS Clock Cycle Time (tCK) CL=5 3ns (min.) / 8ns (max.) Row Cycle Time (tRC) Command Time (tRFC) 54ns (min.) Refresh to Active/Refresh 105ns


    Original     		KHX6400D2LLK2/2G 64-Bit PC2-6400 240-Pin 105ns 000ns KHX6400D2LLK2/2G 1024MB) DDR2-800 KHX6400D2 DDR2 Mechanical Dimensions DDR2 240 pin Mechanical Dimensions PDF

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		240PIN 64Mx8 TS128MLQ64V6J TS128MLQ64V6J 64bits DDR2-667 16pcs 64Mx8bits 240-pin PDF