1056 TRANSISTOR Search Results

avantek microwave 865

Contextual Info: What wLUMHEWLETT PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data 1 UTM-1056 Features Pin Configuration Description Applications • IF/RF Amplification UTM—TO-8T The lITM-1056 contains three monolithic microwave integrated

Contextual Info: electronics marketing 800.332.8638 Avnet Microwave Technical Solutions Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTM-1056 Features Description Pin Configuration • Frequency Range: 10 to 1000 MHz The UTM-1056 contains three monolithic microwave integrated

Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTM-1056 Features Description Pin Configuration • Frequency Range: 10 to 1000␣MHz The UTM-1056 contains three monolithic microwave integrated circuits mounted on a thin-film

Contextual Info: W hatH milKA P AeCwK Al eRtDt Avantek Products Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTM-1056 Features Description Pin Configuration Applications • IF/RF Amplification UTM—TO-8T The UTM-1056 contains three monolithic microwave integrated

teledyne microwave 24022

Contextual Info: Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTM-1056 Features Description Pin Configuration • Frequency Range: 10 to 1000 MHz The UTM-1056 contains three monolithic microwave integrated circuits mounted on a thin-film substrate to provide an RF

SP-3383

Contextual Info: W a t k i n s - J o h n s o n : The Ce l l E x t e n d e r s Power Amplifiers S A 1056 CDMA 2-W att 1.93 GHz to 1.99 GHz Linear Pow er Amplifier Module • 40 dB Bain ■ PldB: +39 dBm ■ 0IP3:+49dBm atkins-Johnson’s SA 1056 Power W Amplifier provides exceptional

NAND01GW3B2C

Abstract: NAND01GR3b2c nand01gw3b2cza6
Contextual Info: NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities

VFBGA153

Abstract: NAND01G-B2C NAND01GW3B2C nand flash ONFI 3.0 NAND01GR3b2c ONFI 3.0 strataflash reliability NAND01G
Contextual Info: NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities

disadvantages of microcontroller

Abstract: power bjt advantages and disadvantages amplifier advantages and disadvantages disadvantages of mosfet Transistor BJT High Current mosfet stereo headphone amplifier circuit headphone jack ADAU1761 BJT IC Vce bjt advantages and disadvantages
Contextual Info: AN-1056 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Capless Headphone Virtual Ground Short-Circuit Protection for the ADAU1361 and ADAU1761 Low Power Codecs

CCD47-10

Abstract: Scientific Imaging Technologies
Contextual Info: CCD47-10 AIMO Back Illuminated Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Nominal 1056 by 1027 Usable Pixels * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection

Contextual Info: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■

NAND02GR3B2D

Abstract: NAND02GR4B2D NAND02GW3B2DN6 NAND02G-B2D NAND02GW3B2D VFBGA63 nand flash ONFI 3.0 ONFI nand 2112B
Contextual Info: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface

NAND02GW3B2D

Abstract: ONFI 3.0 nand ONFI 3.0 VFBGA63 nand flash ONFI 3.0 NAND02GW3B2DN6 NAND02G-B2D NAND02GR3B2D NAND02GR4B2D ONFI nand
Contextual Info: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Preliminary Data Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications

LM64C08P

Abstract: SHARP LM64C08P T65550 AN-1056 lvds 6bit
Contextual Info: National Semiconductor Application Note 1056 Michael Hinh September 1996 INTRODUCTION The advantages of using the FPD-Link chipset in a notebook application are to reduce the number of conductors, the size of the cables, and to allow the system designer to reduce

NAND02GR3B2D

Contextual Info: NAND02G-B2D 2 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Target Specification Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications

LM64C08P

Abstract: SHARP LM64C08P AN-1056 50-pin lvds
Contextual Info: National Semiconductor Application Note 1056 Michael Hinh September 1996 INTRODUCTION The advantages of using the FPD-Link chipset in a notebook application are to reduce the number of conductors, the size of the cables, and to allow the system designer to reduce

CCD47-10

Abstract: e2v CCD57-10
Contextual Info: CCD47-10 NIMO Back Illuminated Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Nominal 1056 by 1027 Usable Pixels * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection

ULGA52

Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
Contextual Info: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications

LGA-52

Abstract: LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint
Contextual Info: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage

NAND02GW3B2D

Abstract: NAND02GW3B2DN6 NAND02GR3B2D NAND02G-B2D NAND02GR4B2D bad block ONFI VFBGA63 NAND02GW3B2D-N
Contextual Info: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface

NAND02GR3B2D

Contextual Info: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Preliminary Data Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications

block code error management, verilog

Abstract: NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B
Contextual Info: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■

NUMONYX

Abstract: JESD97 NAND04GW3B2B NAND08GW3B2A
Contextual Info: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■

NAND04GW3B4

Abstract: 4 bit microcontroller using vhdl bad block error correction code in vhdl vhdl code for 1 bit error generator JESD97
Contextual Info: NAND04GW3B 4 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memory PRELIMINARY DATA Feature summary • High density NAND Flash Memory – 4 Gbit memory array – Up to 128 Mbit spare area – Cost effective solution for mass storage applications ■ NAND Interface