OMRON 1041
Abstract: OMRON 1070 EE-SX1018 OMRON 1018 sx1042 EE-SX1025 EE-SX1041 EE-SX1042 EE-SX1070 EE-SX1071
Text: EE-SX198/199/1018/1025/1041/1042/1070/1071 Miniature Transmissive Photomicrosensor with 2- to 8-mm Slot Width and Phototransistor Output Stable sensing at temperatures as high as 95°C EE-SX1041, EE-SX1070 Compact model with a 5-mm wide slot (EE-SX1041)
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E-SX198/199/1018/1025/1041/1042/1070/1071
EE-SX1041,
EE-SX1070)
EE-SX1041)
12-mm
EE-SX1042)
EE-SX1018)
EE-SX1025)
EE-SX10
1-800-55-OMRON
OMRON 1041
OMRON 1070
EE-SX1018
OMRON 1018
sx1042
EE-SX1025
EE-SX1041
EE-SX1042
EE-SX1070
EE-SX1071
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photomicrosensor 1041
Abstract: OMRON 1041 EE-SX1042 EE-SX198 EE-SX1025 OMRON 1070 method d 1071 C03AE 1041 voltage regulator SX1041
Text: EE-SX198/199/1018/1025/1041/1042/1070/1071 Miniature Transmissive Photomicrosensor with 2- to 8-mm Slot Width and Phototransistor Output Stable sensing at temperatures as high as 95°C EE-SX1041, EE-SX1070 Compact model with a 5-mm wide slot (EE-SX1041)
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E-SX198/199/1018/1025/1041/1042/1070/1071
EE-SX1041,
EE-SX1070)
EE-SX1041)
12-mm
EE-SX1042)
EE-SX1018)
EE-SX1025)
EE-SX10
EE-SX1071
photomicrosensor 1041
OMRON 1041
EE-SX1042
EE-SX198
EE-SX1025
OMRON 1070
method d 1071
C03AE
1041 voltage regulator
SX1041
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melf diode marking
Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Text: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish
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5KE100A-B
5KE100A-T
5KE100CA-B
5KE100CA-T
5KE10A-A
5KE10A-B
5KE10A-T
5KE10CA-B
5KE10CA-T
5KE110A-B
melf diode marking
A180-WLA
RS503s
SBR130S3
Schottky melf
hall sensor 35l
5KE91A-B
PR1005G-A
GBPC3504L
STPR2020CT
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RFF60P06
Abstract: RFG60P06E rfg60p06
Text: RFF60P06 S E M I C O N D U C T O R 25A†, 60V, Hermetically Packaged, Avalanche Rated P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 25A†, 60V TO-254AA • rDS ON = 0.030Ω GATE SOURCE DRAIN • Temperature Compensating PSPICE Model
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RFF60P06
O-254AA
150oC
RFF60P06
MIL-STD-750,
150oC,
MIL-S-19500,
100ms;
500ms;
RFG60P06E
rfg60p06
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
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RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 S E M I C O N D U C T O R 25A†, 60V, Hermetically Packaged, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 25A†, 60V JEDEC TO-254AA • rDS ON = 0.025Ω GATE SOURCE • Temperature Compensating PSPICE Model
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RFF70N06
O-254AA
150oC
RFF70N06
AN7254
AN7260
AN9321
AN9322
RFG70N06
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998
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RFF70N06
RFF70N06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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certificate of compliance jantx
Abstract: RFF60P06 RFG60P06E 8S1A rfg60p06
Text: RFF60P06 Data Sheet September 1998 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding
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RFF60P06
RFF60P06
MIL-S-19500.
certificate of compliance jantx
RFG60P06E
8S1A
rfg60p06
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AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 Data Sheet March 1999 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET File Number 4073.2 Features • 25A†, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
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RFF70N06
RFF70N06
MIL-S-19500.
AN7254
AN7260
AN9321
AN9322
RFG70N06
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AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
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RFF70N06
MIL-S-19500.
150oC
TA49007.
AN7254
AN7260
AN9321
AN9322
RFF70N06
RFG70N06
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AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 Data Sheet January 2002 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features • 25A†, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
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RFF70N06
RFF70N06
MIL-S-19500.
AN7254
AN7260
AN9321
AN9322
RFG70N06
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RFF60P06
Abstract: RFG60P06E EDS819
Text: RFF60P06 Data Sheet September 1998 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET Features Title FF6 06 bt A, V, 30 m, Chan- The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
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RFF60P06
RFF60P06
TA09835.
RFG60P06E
EDS819
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RFF60P06
Abstract: RFG60P06E
Text: RFF60P06 Data Sheet January 2002 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding
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RFF60P06
RFF60P06
MIL-S-19500.
RFG60P06E
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XRP77XX-XCM
Abstract: XRP7714 XRP7740 XRP7713 1GB-x16 TQFN32 TQFN-32 XRP7704 SOC 5A manual monitor adapter 12v 5A
Text: Programmable Power Technology 2010 www.exar.com Exar’s Power XR Digital Power Solutions Exar’s PowerXR ICs integrate the best of both worlds; the low cost and flexibility of digital power control as well as the robust power capabilities of high performance analog power switches. PowerXR products reduce development time from weeks to
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XRP7704
XRP7740
XRP77XX-XCM
XRP7714
XRP7740
XRP7713
1GB-x16
TQFN32
TQFN-32
SOC 5A
manual monitor adapter 12v 5A
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UPC1042C
Abstract: UPC1042C equivalent UPC1042 PC1042 nec 1042 SWITCHING REGULATOR 723 voltage regulator ic
Text: NEC //PC 1042 SWITCHING REGULATOR CONTROL CIRCUIT NEC Electronics Inc. Description Pin Configuration The ^ PC1042 is a sw itching regulator control circuit designed for use in Sw itch M ode Power S u p p lie s SMPS . The ¿/PC1042 uses the Pulse Width M odulator
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uPC1042
The/uPC1042
uPC1042C
//PC1042
UPC1042C equivalent
PC1042
nec 1042 SWITCHING REGULATOR
723 voltage regulator ic
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8618c
Abstract: ELPAC power supply
Text: ELPAC ELEKS/ ELPAC CMPN b?E D BBTETBT DQGOST1 SflT f l.e s iy - z r POWER-CAP - E CS Series — High Current, Low ESR ►Low ESR ►High-Current; ►High Temperature ►Small Size ^ Switching Regulators The POWER-CAP has been specifically designed to operate in the most stringent high frequency, high current
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CS4A106*
8618c
ELPAC power supply
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S2000F
Abstract: TS-1042
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE S2000F COLOR TV HORIZONTAL OUTPUT APPLICATIONS. U n it in mm COLOR TV SWITCHING REGULATOR APPLICATIONS. FEATURES: . High V o ltag e : V^j;s=1500V . Low S a tu r a tio n V o ltag e : Vqjt s a t =5V(Max.) . High Speed
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S2000F
500mA
S2000F
TS-1042
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bu208a toshiba
Abstract: BU208A
Text: T O S H I B A { D I S C R E T E / O P T O } Sb 9097250 TOSHIBA <D I S C R E T E / O P T O , » ^ 1 ^ 7 2 5 5oL 08 LOO G O D ñ l D O D T - 3 2 > - ¿ > 7 SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. U n i t in m m COLOR TV SWITCHING REGULATOR APPLICATIONS.
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Untitled
Abstract: No abstract text available
Text: OPTEK Product Bulletin OHN3175U May 1996 Hallogic Bipolar Hall Effect Sensors Latches Types OHN3175U, OHS3175U Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) • Designed for use in brushless DC motors • Operates over a broad range of
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OHN3175U
OHN3175U,
OHS3175U
OHN31
OHS3175U.
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Untitled
Abstract: No abstract text available
Text: 0 . OPTEK Product Bulletin OHN3175U May 1996 Hallogic Bipolar Hall Effect Sensors Latches Types OHN3175U, OHS3175U • Features Absolute Maximum Ratings (T a = 2 5 ° C unless otherw ise noted) • Designed for use in brushless DC motors • Operates over a broad range of
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OHN3175U
OHN3175U,
OHS3175U
3175U
OHS3175U.
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OHN3175U
Abstract: OHS3175U
Text: 0 . OPTEK P roduct B ulletin OHN3175U May 1996 Hallogic Bipolar Hall Effect Sensors Latches Types OHN3175U, OHS3175U Features A b so lu te M axim um R atings (T a = 2 5 ° C unless otherwise noted) • Designed for use in brushless DC motors • Operates over a broad range of
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OHN3175U
OHN3175U,
OHS3175U
OHS3175U
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OHN3175U
Abstract: OHS3175U 0HS3175U
Text: OPTEK Product Bulletin OHN3175U May 1996 Hallogic Bipolar Hall Effect Sensors Latches Types OHN3175U, OHS3175U .182 (4.62) -.025 (0.64) L .0!5 (0.38) SO. 3 PL .045 (1.14) PACKAGE CENTER SILVER OR TIN PLATING OVER COPPER LEADS TO WITHIN .040 OF PACKAGE SURFACE
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OHN3175U
OHN3175U,
OHS3175U
OHS3175U
0HS3175U
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MHT10P10
Abstract: C63H q 1363
Text: M OTO ROLA SC 12E D X S TR S/R F MOTOROLA I b3b?254 GGflMEIG G | Order this data sheet by MHT10P10/D S E M IC O N D U C T O R TECHNICAL DATA Product Preview P o w e r Field E ffe c t T r a n s is t o r P-Channel Enhancem ent-Mode Silicon Gate T M O S T M O S PO W ER FET
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MHT10P10/D
T0-220
MK145BP,
MHT10P10
C63H1
MHT10P10
C63H
q 1363
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IRFP9240
Abstract: CC 1038 TO-247
Text: PD-9.481C International Ëæl Rectifier IRFP9240 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V
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IRFP9240
-200V
O-247
T0-220
O-218
t50KQ
CC 1038 TO-247
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