102N Search Results

102N Result Highlights (5)

Part	Manufacturer	Description
MSS1278T-102NLB	Coilcraft Inc	General Purpose Inductor, 1uH, 30%, 1 Element, Ferrite-Core, SMD, 4747, ROHS COMPLIANT
LPS4018-102NRB	Coilcraft Inc	General Purpose Inductor, 1uH, 30%, 1 Element, Ferrite-Core, SMD, 1515, CHIP, 1515, HALOGEN FREE AND ROHS COMPLIANT
LPS4012-102NLB	Coilcraft Inc	General Purpose Inductor, 1uH, 30%, 1 Element, Ferrite-Core, SMD, 1515, ROHS COMPLIANT
MSS1038-102NLB	Coilcraft Inc	General Purpose Inductor, 1uH, 30%, 1 Element, Ferrite-Core, SMD, 4039, ROHS COMPLIANT
MSS1278T-102NLD	Coilcraft Inc	General Purpose Inductor, 1uH, 30%, 1 Element, Ferrite-Core, SMD, 4747, ROHS COMPLIANT

102N Price and Stock

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Pulse Electronics Corporation PA4334.102NLT FIXED IND 1UH 1.87A 52 MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PA4334.102NLT	Cut Tape	13,875		1	1 $0.36 10 $0.296 100 $0.2212 1000 $0.15505 10000 $0.15505	Buy Now
	PA4334.102NLT	Digi-Reel	13,875		1	1 $0.28 10 $0.228 100 $0.28 1000 $0.15434 10000 $0.15434	Buy Now
Newark	PA4334.102NLT	Bulk	12,000		2,000	1 - 10 - 100 - 1000 $0.199 10000 $0.199	Buy Now
Avnet Abacus	PA4334.102NLT	Reel		17 Weeks	14,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	PA4334.102NLT					1 - 10 - 100 - 1000 $0.2468 10000 $0.1474	Buy Now
Pulse Electronics Corporation PA4345.102NLT FIXED IND 1UH 7A 20 MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PA4345.102NLT	Digi-Reel	4,241		1	1 $0.85 10 $0.703 100 $0.5778 1000 $0.47522 10000 $0.47522	Buy Now
	PA4345.102NLT	Cut Tape	4,241		1	1 $1.03 10 $0.875 100 $0.6204 1000 $0.49313 10000 $0.49313	Buy Now
Bristol Electronics	PA4345.102NLT		520			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	PA4345.102NLT	Reel		24 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Asia	PA4345.102NLT		60,000	8 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	PA4345.102NLT		5,500			1 - 10 - 100 - 1000 - 10000 $0.4478	Buy Now
SEI Stackpole Electronics Inc ZV35K2220T102N VARISTOR 56V 1KA 2220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ZV35K2220T102N	Cut Tape	3,823		1	1 $2.14 10 $1.333 100 $0.8853 1000 $0.69682 10000 $0.69682	Buy Now
	ZV35K2220T102N	Digi-Reel	3,823		1	1 $2.14 10 $1.333 100 $0.8853 1000 $0.69682 10000 $0.69682	Buy Now
	ZV35K2220T102N	Reel	3,000		1,000	1 - 10 - 100 - 1000 $0.63668 10000 $0.5375	Buy Now
NAC	ZV35K2220T102N		2,000		1	1 - 10 - 100 - 1000 $1.333 10000 $1.143	Buy Now
Sharp Microelectronics of the Americas PC81102NSZ OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PC81102NSZ	Tube	1,532		1	1 $0.19 10 $0.164 100 $0.19 1000 $0.1311 10000 $0.1311	Buy Now
Pulse Electronics Corporation PA2242.102NLT IND PWR MOLDED 1.0UH 23A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PA2242.102NLT	Digi-Reel	1,000		1	1 $2.07 10 $1.61 100 $1.2492 1000 $1.04444 10000 $1.04444	Buy Now
	PA2242.102NLT	Cut Tape	1,000		1	1 $2.07 10 $1.61 100 $1.2492 1000 $1.04444 10000 $1.04444	Buy Now
	PA2242.102NLT	Reel	1,000		1,000	1 - 10 - 100 - 1000 $0.98777 10000 $0.8875	Buy Now

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102N Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
102N02	Directed Energy	DE-SERIES FAST POWER MOSFET	Original	PDF
102N05	Directed Energy	DE-SERIES FAST POWER MOSFET	Original	PDF
102N10	Directed Energy	DE-SERIES FAST POWER MOSFET	Original	PDF
102N20	Directed Energy	DE-SERIES FAST POWER MOSFET	Original	PDF
102NU70	Tesla	Transistor	Scan	PDF
102NU71	Tesla	Transistor	Scan	PDF

102N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
nec 2401 Abstract: 400P DE375-102N10A Directed Energy Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	DE375-102N10A nec 2401 400P DE375-102N10A Directed Energy	PDF
DE275X2-102N06A Abstract: 102N06 DE275X2 102N06A 400P DE-27 Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in	Original	DE275X2-102N06A DE275X2-102N06A 102N06 DE275X2 102N06A 400P DE-27	PDF
ISOPLUS247 Abstract: No abstract text available Text: Advanced Technical Information PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 60 A Ω 36 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	102N30P ISOPLUS247	PDF
203N Abstract: No abstract text available Text: RoHS POWER LINE COMMON MODE CHOKE VCMB744822 Solid Base for Stable Mounting High Current Capability Excellent EMI Suppression Fixed Pins for easy PCB Insertion Cross to Wurth 744822 Series Operating temp: -40ºC to +125ºC Part Number VCMB744822-102N VCMB744822-222N	Original	VCMB744822 VCMB744822-102N VCMB744822-222N VCMB744822-332N VCMB744822-103N VCMB744822-203N 203N	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarHTTM HiPerFET IXFK 102N30P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	102N30P 405B2	PDF
102N30P Abstract: 102N30 IXTK102N30P Text: PolarHTTM Power MOSFET IXTK 102N30P VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM	Original	102N30P 102N30P 102N30 IXTK102N30P	PDF
102N12 Abstract: Directed Energy Directed 400P DE375-102N12A Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-102N12A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	DE375-102N12A 50MHz 102N12 Directed Energy Directed 400P DE375-102N12A	PDF
KD502 Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46 Text: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71	OCR Scan	101NU70 102NU70 103NU70 104NU70 105NU70 106NU70 107NU70 101NU71 102NU71 103NU71 KD502 KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46	PDF
DE375-102N10A Abstract: No abstract text available Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000	Original	DE375-102N10A DE375-102N10A	PDF
102N20 Abstract: 3RH1140-1AD00 Directed Energy Text: PRELIMINARY SPECIFICATIONS DE-375X2 102N20 20A, 1000V, 0.6Ω US Patent #4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	DE-375X2 102N20 150oC 102N20 3RH1140-1AD00 Directed Energy	PDF
DE-375-102N10 Abstract: 102N10 DE-375 Text: PRELIMINARY SPECIFICATIONS DE-375 102N10 10A, 1000V, 1.2Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	DE-375 102N10 150oC DE-375-102N10 102N10	PDF
102N05 Abstract: DE-275 Text: PRELIMINARY SPECIFICATIONS DE-275 102N05 5A, 1000V, 2.6Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	DE-275 102N05 150oC 102N05	PDF
Untitled Abstract: No abstract text available Text: PolarHTTM Power MOSFET VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ IXTK 102N30P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM	Original	102N30P O-264	PDF
Untitled Abstract: No abstract text available Text: TECHNICAL DATA SHEET RF_35/12.04/3.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG QMA 28S107-102N5 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H	Original	28S107-102N5 28S000-000, D-84526	PDF

13.56MHZ 3KW GENERATOR Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A	Original	56MHz 56MHz, DE375-102N12A DEIC420 DE375-102N12A 0-471-03018-X 13.56MHZ 3KW GENERATOR 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv	PDF
13.56mhz c class amp Abstract: ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	DE275-102N06A 102N06A 13.56mhz c class amp ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A	PDF
IXFN102N30P Abstract: No abstract text available Text: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM	Original	102N30P IXFN102N30P	PDF
nec 2401 Abstract: DE375-102N10A "RF MOSFETs" 400P Text: DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	DE375-102N10A nec 2401 DE375-102N10A "RF MOSFETs" 400P	PDF
102NU71 Abstract: nU71 107NU70 101NU71 104NU71 tranzistory NPN TRANZISTOR h21E tesla ScansUX7 Text: NIZKOFREKVENCNÌ N-P-N TRANZISTORY 102N U 71 Pouziti: P o lo v o d ic o v é s o uca stky n -p -n , v h o d n é TESLA p re d e v s im p ro 102NU71 js o u p lo s n é p o u z iti v e s p in a c i a n iz k o fre k v e n c n i tra n z is to ry im p u ls n i te c h n ic e ,	OCR Scan	102NU71 nU71 107NU70 101NU71 104NU71 tranzistory NPN TRANZISTOR h21E tesla ScansUX7	PDF
DE475-102N21A Abstract: PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice Text: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	DE475-102N21A 30MHz DE475-102N21A PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice	PDF
air variable capacitor Abstract: 13.56mhz c class amp DE275-102N06A 102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Maximum Ratings VDSS = 1000 V ID25 = 8A RDS on = 1.5 Ω PDC = 590 W Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	DE275-102N06A 102N06A air variable capacitor 13.56mhz c class amp DE275-102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF	PDF
Untitled Abstract: No abstract text available Text: TECHNICAL DATA SHEET RF_35/12.04/3.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG QMA 28S161-102N5 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H	Original	28S161-102N5 28S000-000, D-84526	PDF
Untitled Abstract: No abstract text available Text: TECHNICAL DATA SHEET QMA 28K101-102N5-NM STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to Rosenberger 28K000-000, series QMA Rosenberger is an authorised QLF manufacturer Documents Assembly instruction 28E	Original	28K101-102N5-NM 28K000-000, D-84526 18g/pce 09-s509	PDF
DE375-102N12A Abstract: 400P Text: DE375-102N12A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	DE375-102N12A 50MHz DE375-102N12A 400P	PDF

102N Search Results

102N Result Highlights (5)

102N Price and Stock

Pulse Electronics Corporation PA4334.102NLT

Pulse Electronics Corporation PA4345.102NLT

SEI Stackpole Electronics Inc ZV35K2220T102N

Sharp Microelectronics of the Americas PC81102NSZ

Pulse Electronics Corporation PA2242.102NLT

102N Datasheets (6)

102N Datasheets Context Search

nec 2401

DE275X2-102N06A

ISOPLUS247

203N

Untitled

102N30P

102N12

KD502

DE375-102N10A

102N20

DE-375-102N10

102N05

Untitled

Untitled

13.56MHZ 3KW GENERATOR

13.56mhz c class amp

IXFN102N30P

nec 2401

102NU71

DE475-102N21A

air variable capacitor

Untitled

Untitled

DE375-102N12A