1024C Search Results

Contextual Info: TMS44100, TMS44100P 4194304-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS410F-SEPTEMBER 1989-REVISED DECEMBER 1992 Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS SD P AC K A G E t (TOP VIEW) DJ P A C K A G E t (TOP VIEW) Organization . . . 4194 304 x 1

Contextual Info: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S 891C - A U G U S T 1996 - R EVISED O C TO BE R 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.

44-800-p

Abstract: 44800P PIN DIAGRAM of IC AD 524 IN2045
Contextual Info: TMS44800, TMS44800P 524 288-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS480B-AUGUST1992-REVISED DECEMBER 1992 This data sheet is applicable to all TMS44800/Ps symbolized with Revision“B" and subsequent revisions as described on page 22. * Organization . . . 524 288 x 8

TMS44410

Abstract: TMS44410-70
Contextual Info: TMS44410 1 048 576-WORD BY 4-BIT WRITE-PER-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A - • Organization . . . 1 048 576 x 4 SMHS441 JANUARY 1991 DM and DJ Packaget Top View • Single 5-V Power Supply (±10% Tolerance) • Performance Ranges: ACCESS ACCESS ACCESS

Contextual Info: Datasheet Secondary power supply series for automotive 2.69 to 5.5V, 1.2V Output, 2.25MHz Synchronous Step-Down Converter BD90571EFJ-C ●General Description The BD90571EFJ-C is a synchronous rectification type step-down DC/DC converter with a 2.25MHz fixed

FT800

Abstract: FT800 Embedded Video Engine Datasheet DS_FT800 MPU 8751 s vqfn 7 x 7 TRAY 0.9mm
Contextual Info: Document No.: FT_000792 FT800 Embedded Video Engine Datasheet Version 1.1 Clearance No.: FTDI# 334 Future Technology Devices International Ltd. FT800 Embedded Video Engine The FT800 is an easy to use graphic controller targeted for embedded applications to generate high-quality

MSC2323258D

Contextual Info: This version: Mar. 3. 1999 Semiconductor MSC2323258D-xxBS4/DS4 2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC2323258D-xxBS4/DS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a

E5-1000-125-N-S-D-D

Contextual Info: HEDC-55xx/HEDC-56xx Two or Three Channel Quick Assembly Encoders With Connector Latch Data Sheet Description Features The HEDC-5xxx-xxx, while similar to the industry standard HEDS-5xxx kit encoder, provides a connector latch on the cover housing to improve connector retention. This

TMS44101

Contextual Info: TMS44101 4194 304-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A — SMHS411 — JA N U A R Y 1991 Organization . . . 4 194 304 x DC w C RAS C 1 1 ^ 2 3 Z 4 NC A 10 C 5 Single 5-V Power Supply ±10% Tolerance Performance Ranges: A0 C 9 A1 C 10 A2 C 11 READ ACCESS ACCESS ACCESS

TS-2321

Contextual Info: SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS041D - JANUARY 1991 - REVISED JUNE 1995 Processed to MIL-STD-883, Class B Organization. . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance Performance Ranges: A CCESS ACCESS A CCESS

TMS44400

Abstract: TMS44400-10
Contextual Info: TMS44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY R E V A — S M H S 4 4 0 B — O C T O B E R 1 9 8 9 — R E V IS E D J A N U A R Y 1991 DM AND DJ P acka ge st Top View This Data Sheet Is Applicable to A ll TMS44400s Symbolized With Revision “B" and Subsequent

bPA20

Contextual Info: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HM5251165B-75/A6/B6 HM5251805B-75/A6/B6 HM5251405B-75/A6/B6 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword x 16-bit x 4-bank/16-Mword x 8-bit x 4-bank /32-Mword x 4-bit x 4-bank PC/133, PC/100 SDRAM HITACHI ADE-203-1095 Z Preliminary Rev. 0.0 Sep. 1, 1999

Contextual Info: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,

Contextual Info: HY51V4403B Series “H Y U N D A I 1M x 4-bit CMOS DRAM with 4CÄS DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576x4-bit. The HY51V4403B has four ¿ASs CAS0-3 w hich control corresponding data I/O port in conjunction with OE(eg.CASO controls DQO,

MSC23B236D

Contextual Info: This version: Mar. 3. 1999 Semiconductor MSC23B236D-xxBS8/DS8 2,097,152-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23B236D-xxBS8/DS8 is a fully decoded, 2,097,152-word x 36-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages and four 2Mb DRAMs in SOJ packages mounted with

G10768

Abstract: 1000 hz cmos Image Sensors
Contextual Info: InGaAs linear image sensors G10768 series Near infrared image sensor 0.9 to 1.7 m with 1024 pixels and high-speed line rate The G10768 series is a 1024-channel, high-speed infrared image sensor designed for applications such as foreign object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. The signal processing circuit uses

G10768

Abstract: G10768-1024DB
Contextual Info: InGaAs linear image sensors G10768 series Near infrared image sensor 0.9 to 1.7 m with 1024 pixels and high-speed line rate The G10768 series is a 1024-channel, high-speed infrared image sensor designed for applications such as foreign object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. The signal processing circuit uses

642006EGM1G09TD

Abstract: DIMM 1998
Contextual Info: 2M x 64 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 642006EGM1G09TD 168 Pin 2Mx64 EDO DIMM Unbuffered, 1k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 2Mx64 bit, 9 chip, 3.3V, 168 Pin DIMM module consisting of (8) 1Mx16 (TSOP) DRAM

Contextual Info: T O SH IB A TSZ2G48SJSZ2J48S TOSHIBA SOLID STATE AC RELAY TSZ2G48S, TSZ2J48S Unit in mm OPTICALLY ISOLATED, NORM ALLY OPEN SSR COMPUTER PERIPHERALS 6.5 M AX. 24 M A X. MACHINE TOOL CONTROLS PROCESS CONTROL SYSTEMS TRAFFIC CONTROL SYSTEMS R.M.S On-State Current

FZ77

Abstract: HM5264165 HM5264165TT-10 HM5264165TT-12 HM5264165TT-15
Contextual Info: HM5264165 Series HM5264805 Series HM5264405 Series 1,048,576-word x 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word x 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word x 4-bit x 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.1

marking WMM

Abstract: RA52 1cas5 22r29
Contextual Info: 1 MEG x 4 DRAM DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES • Four independent CAS controls, allowing individual m anipulation to each of the four data In p u t/O u tp u t ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit w ords w hen using 1 Meg x 4 DRAMs for mem ory

S891C

Abstract: SS828
Contextual Info: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S891C -A U G U S T 1996-R E V IS E D OCTOBER 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E ” and subsequent revisions as described in the device symbolization section.