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Catalog Datasheet	MFG & Type	PDF	Document Tags
NT8GC72B8PB0NF-DI Abstract: NT8GC72C8PB0NF nanya 8gb DDR3 DIMM CL-nRCD-nRP 1024Mx8 mrs 317 Nanya DDR3 Text: NT4GC72B C 89B0NF / NT8GC72B(C)8PB0NF 4GB: 512M x 72 / 8GB: 1024M x 72 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3(L)-1333/1600 1024Mx8 SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency PC3(L)-10600 PC3(L)-12800	Original	PDF	NT4GC72B 89B0NF NT8GC72B 1024M 1024Mx8 NT8GC72B8PB0NF-DI NT8GC72C8PB0NF nanya 8gb DDR3 DIMM CL-nRCD-nRP mrs 317 Nanya DDR3
K8D3216UBC-pi07 Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM	Original	PDF	BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	PDF	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
1024Mx8 Abstract: nanya 4gb DDR3 SODIMM PC3L-10600 Text: NT4GC72C89B0NS / NT8GC72C8PB0NS 4GB: 512M x 72 / 8GB: 1024M x 72 PC3L-10600 DDR3 SODIMM with ECC Based on DDR3-1333 512Mx8 SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency PC3-10600 -CG Unit 9 fck – Clock Frequency 667 tck – Clock Cycle	Original	PDF	NT4GC72C89B0NS NT8GC72C8PB0NS 1024M PC3L-10600 DDR3-1333 512Mx8 PC3-10600 78-ball 1024Mx8 nanya 4gb DDR3 SODIMM
Untitled Abstract: No abstract text available Text: NT4GC72B C 89B1NS / NT8GB(C)72C8PB1NS 4GB: 512M x 72 / 8GB: 1024M x 72 PC3L-10600 DDR3 SODIMM with ECC Based on DDR3-1333 512Mx8 SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency PC3-10600 -CG Unit 9 fck – Clock Frequency 667 tck – Clock Cycle	Original	PDF	NT4GC72B 89B1NS 72C8PB1NS 1024M PC3L-10600 DDR3-1333 512Mx8 PC3-10600 78-ball
HY27UG088G5B Abstract: HY27UG088G hynix nand 8G hynix nand flash 1.8v 4Gb HY27UG088G5 RXW Series hynix nand edc spare area code NAND FLASH 64MB serial flash 256Mb fast erase hynix nand flash 4Gb Text: 1 HY27UG088G 5/D B Series 8Gbit (1Gx8bit) NAND Flash 8Gb NAND FLASH HY27UG088G(5/D)B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.	Original	PDF	HY27UG088G HY27UG0B HY27UG088G5B hynix nand 8G hynix nand flash 1.8v 4Gb HY27UG088G5 RXW Series hynix nand edc spare area code NAND FLASH 64MB serial flash 256Mb fast erase hynix nand flash 4Gb