CCD134
Abstract: CCD133A Contact image sensor fairchild fairchild ccd linear ccd radiation fairchild
Text: CCD134 1024-Element Linear Image Sensor CCD 134 1024-Element Line Scan Image Sensor FEATURES • • • • • • • • • • • • • • 1024 x 1 photosite array 13µm x 13µm photosites on 13µm pitch Anti-blooming and integration control Enhanced spectral response particularly in the
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CCD134
1024-Element
CCD133A
Contact image sensor fairchild
fairchild ccd
linear ccd radiation fairchild
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KAF-1001E
Abstract: KEK-4H0080-KAF-1001-12-5 4H0080 ccd 1024 kaf-1401E
Text: DEVICE PERFORMANCE SPECIFICATION Revision 5.0 MTD/PS-0195 April 14, 2010 KODAK KAF-1001E IMAGE SENSOR 1024 H X 1024 (V) FULL-FRAME CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4
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MTD/PS-0195
KAF-1001E
MTD/PS-0195
KEK-4H0080-KAF-1001-12-5
4H0080
ccd 1024
kaf-1401E
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KAF-1001
Abstract: kaf-140 KAF-1401
Text: KAF-1001 IMAGE SENSOR 1024 H X 1024 (V) FULL FRAME CCD IMAGE SENSOR JULY 20, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0033 KAF-1001 Image Sensor TABLE OF CONTENTS Summary Specification . 4
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KAF-1001
PS-0033
PS-0033
kaf-140
KAF-1401
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KAF-1001
Abstract: No abstract text available
Text: DEVICE PERFORMANCE SPECIFICATION Revision 3.0 MTD/PS-0195 April 18, 2008 KODAK KAF-1001E IMAGE SENSOR 1024 H X 1024 (V) FULL-FRAME CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4
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MTD/PS-0195
KAF-1001E
450ke
500ke.
MTD/PS-0666
KAF-1001
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Untitled
Abstract: No abstract text available
Text: KAF-1001 IMAGE SENSOR 1024 H X 1024 (V) FULL FRAME CCD IMAGE SENSOR JUNE 18, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0033 KAF-1001 Image Sensor TABLE OF CONTENTS Summary Specification . 4
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KAF-1001
PS-0033
PS-0033
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BK7G18
Abstract: ADC hard radiation STAR-1000 STAR1000-BK7 STAR1000BK7
Text: STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. ■ 1024 by 1024 pixels on 15 mm pitch. ■ Radiation tolerant design. ■ On-chip double sampling circuit to cancel Fixed Pattern Noise.
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STAR1000
STAR1000
10-bit
JLCC-84
BK7G18
ADC hard radiation
STAR-1000
STAR1000-BK7
STAR1000BK7
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FillFactory
Abstract: STAR1000 STAR1000 FPGA BK7G18 CYIS1SM1000AA-HHC CYIS1SM1000AA-HQC JESD22 STAR1000-BK7 STAR250 CMOS image sensor with global shutter
Text: STAR1000 STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Key Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. • 1024 by 1024 pixels on 15 µm pitch. • Radiation tolerant design. • On-chip double sampling circuit to cancel Fixed Pattern
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STAR1000
STAR1000
10-bit
JLCC-84
BK7G18
FillFactory
STAR1000 FPGA
CYIS1SM1000AA-HHC
CYIS1SM1000AA-HQC
JESD22
STAR1000-BK7
STAR250
CMOS image sensor with global shutter
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FillFactory
Abstract: BK7G18 glass STAR1000 STAR1000 FPGA BK7G18 CYIS1SM1000AA-HHC CYIS1SM1000AA-HQC JESD22 STAR1000-BK7 STAR250
Text: STAR1000 STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Key Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. • 1024 by 1024 pixels on 15 µm pitch. • Radiation tolerant design. • On-chip double sampling circuit to cancel Fixed Pattern
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STAR1000
STAR1000
10-bit
JLCC-84
BK7G18
FillFactory
BK7G18 glass
STAR1000 FPGA
CYIS1SM1000AA-HHC
CYIS1SM1000AA-HQC
JESD22
STAR1000-BK7
STAR250
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Potentiometer 25K
Abstract: AD5235 AD5235BRU25 AD5235BRU250 M68HC11 TSSOP-16 walt
Text: PRELIMINARY TECHNICAL DATA a Nonvolatile Memory, Dual 1024 Position Digital Potentiometers AD5235 FEATURES Dual, 1024 Position Resolution 25K, 250K Ohm Terminal Resistance with 50ppm/°C Tempco Nonvolatile Memory Preset SPI Compatible Serial Data Input with Readback Function
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AD5235
50ppm/
Potentiometer 25K
AD5235
AD5235BRU25
AD5235BRU250
M68HC11
TSSOP-16
walt
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ADC hard radiation
Abstract: Star1000 Radiation Detector BK7G18 glass FillFactory STAR1000 1M Pixel Radiation Hard BK7G18 image sensor mono medical temperature sensor STAR1000BK7
Text: STAR1000 STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Key Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. • 1024 by 1024 pixels on 15 µm pitch. • Radiation tolerant design. • On-chip double sampling circuit to cancel Fixed Pattern
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STAR1000
STAR1000
10-bit
JLCC-84
BK7G18
ADC hard radiation
Radiation Detector
BK7G18 glass
FillFactory
STAR1000 1M Pixel Radiation Hard
image sensor mono
medical temperature sensor
STAR1000BK7
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Untitled
Abstract: No abstract text available
Text: a Nonvolatile Memory, Dual 1024-Position Programmable Resistors ADN2850* FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Full-Scale Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection
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1024-Position
ADN2850*
100-Year
MO-220
16-Lead
RU-16)
MO-153AB
C02660â
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400H
Abstract: ADN2850 ADN2850BCP25 ADN2850BCP250 TSSOP-16
Text: PRELIMINARY TECHNICAL DATA a Nonvolatile Memory, Dual 1024 Position Programmable Resistors ADN2850 FEATURES Dual, 1024 Position Resolution 25K, 250K Ohm Terminal Resistance Low Temperature Coefficient - 35ppm/ °C Nonvolatile Memory Preset SPI Compatible Serial Data Input with Readback Function
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ADN2850
35ppm/
ADN2850
16-Lead
CP-16)
400H
ADN2850BCP25
ADN2850BCP250
TSSOP-16
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BCP25
Abstract: laser diode spice model simulation 10xxxxh 8XXXXX hdmi shift SDI BCP250 APD spice model
Text: a Nonvolatile Memory, Dual 1024-Position Programmable Resistors ADN2850* FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Full-Scale Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection
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1024-Position
ADN2850*
ADN2850
l-potentiometers/adn2850/products/product
10-Feb-2010
BCP25
laser diode spice model simulation
10xxxxh
8XXXXX
hdmi shift SDI
BCP250
APD spice model
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BCP25
Abstract: 2850B25 ADN2850 ADN2850BCP25 ADN2850BCP25-RL7 TSSOP-16 200H 408C E 102H transistor
Text: a Nonvolatile Memory, Dual 1024-Position Programmable Resistors ADN2850* FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Full-Scale Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection
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1024-Position
ADN2850*
100-Year
C02660
BCP25
2850B25
ADN2850
ADN2850BCP25
ADN2850BCP25-RL7
TSSOP-16
200H
408C
E 102H transistor
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e2v ccd
Abstract: CCD47-20 CCD4720
Text: CCD47–20 Back Illuminated High Performance AIMO Back Illuminated CCD Sensor FEATURES * 1024 by 1024 1:1 Image Format * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Frame Transfer Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection
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CCD47
e2v ccd
CCD47-20
CCD4720
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CCD47-20
Abstract: CCD4720 S11071 ccd sensor back illuminated
Text: CCD47-20 Back Illuminated NIMO High Performance NIMO Back Illuminated CCD Sensor FEATURES * 1024 by 1024 1:1 Image Format * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Frame Transfer Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection
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CCD47-20
CCD4720
S11071
ccd sensor back illuminated
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CCD47-10
Abstract: Scientific Imaging Technologies
Text: CCD47-10 AIMO Back Illuminated Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Nominal 1056 by 1027 Usable Pixels * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection
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CCD47-10
Scientific Imaging Technologies
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CCD47-10
Abstract: e2v CCD57-10
Text: CCD47-10 NIMO Back Illuminated Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Nominal 1056 by 1027 Usable Pixels * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection
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CCD47-10
e2v CCD57-10
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ccd47-10
Abstract: Scientific Imaging Technologies
Text: CCD47-10 AIMO Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Image Format * Image Area 13.3 x 13.3 mm * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection * Very Low Noise Output Amplifiers * Gated Dump Drain on Output Register
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CCD47-10
Scientific Imaging Technologies
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8C740
Abstract: CCD47-10
Text: CCD47-10 NIMO Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Nominal * Image Area 13.3 x 13.3 mm * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection * Very Low Noise Output Amplifiers * Gated Dump Drain on Output Register
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CCD47-10
8C740
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e2v ccd
Abstract: CCD47-20 7133A 8C740 CCD4720 scientific imaging technologies A1A-CCD47-20 ccd sensor back illuminated CCD-Sensor for e2v CCD47
Text: CCD47-20 High Performance CCD Sensor FEATURES * 1024 by 1024 1:1 Image Format * Image Area 13.3 x 13.3 mm * Frame Transfer Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection * Very Low Noise Output Amplifiers * Gated Dump Drain on Output Register
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CCD47-20
CCD47-20
sp243
CCD47-20,
e2v ccd
7133A
8C740
CCD4720
scientific imaging technologies
A1A-CCD47-20
ccd sensor back illuminated
CCD-Sensor for e2v
CCD47
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KAF-1401E
Abstract: kodak ccd kaf-140
Text: KAF-1001E Performance Specification KAF - 1001E 1024 H x 1024(V) Pixel Enhanced Response Full-Frame CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650 Revision 2.0 March 19, 2004 Eastman Kodak Company - Image Sensor Solutions
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KAF-1001E
1001E
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KAF-1401E
kodak ccd
kaf-140
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CCD4720
Abstract: CCD47-20
Text: CCD47-20 High Performance CCD Sensor FEATURES * 1024 by 1024 1:1 Image Format * Image Area 13.3 x 13.3 mm * Frame Transfer Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection * Very Low Noise Output Amplifiers * Gated Dump Drain on Output Register
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CCD4720
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TRANSISTOR S2d
Abstract: TK-10 TRANSISTOR S1d
Text: TEKTRONIX INC/ INTEGRATE» T C I C i/ l\ SIE » a^Qbiaq qddditm INTEGRATED CIRCUITS OPERATION CHARGE COUPLED DEVICES q • SPECIFICATIONS ] OPERATING INFORMATION ! ü Front Illuminated or thinned back Illuminated* ü Larga area format: 1024 by 1024 pixels
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TK1024A/October
TK1024
TRANSISTOR S2d
TK-10
TRANSISTOR S1d
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