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    1024 TRANSISTOR Search Results

    1024 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1024 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CCD134

    Abstract: CCD133A Contact image sensor fairchild fairchild ccd linear ccd radiation fairchild
    Text: CCD134 1024-Element Linear Image Sensor CCD 134 1024-Element Line Scan Image Sensor FEATURES • • • • • • • • • • • • • • 1024 x 1 photosite array 13µm x 13µm photosites on 13µm pitch Anti-blooming and integration control Enhanced spectral response particularly in the


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    PDF CCD134 1024-Element CCD133A Contact image sensor fairchild fairchild ccd linear ccd radiation fairchild

    KAF-1001E

    Abstract: KEK-4H0080-KAF-1001-12-5 4H0080 ccd 1024 kaf-1401E
    Text: DEVICE PERFORMANCE SPECIFICATION Revision 5.0 MTD/PS-0195 April 14, 2010 KODAK KAF-1001E IMAGE SENSOR 1024 H X 1024 (V) FULL-FRAME CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4


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    PDF MTD/PS-0195 KAF-1001E MTD/PS-0195 KEK-4H0080-KAF-1001-12-5 4H0080 ccd 1024 kaf-1401E

    KAF-1001

    Abstract: kaf-140 KAF-1401
    Text: KAF-1001 IMAGE SENSOR 1024 H X 1024 (V) FULL FRAME CCD IMAGE SENSOR JULY 20, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0033 KAF-1001 Image Sensor TABLE OF CONTENTS Summary Specification . 4


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    PDF KAF-1001 PS-0033 PS-0033 kaf-140 KAF-1401

    KAF-1001

    Abstract: No abstract text available
    Text: DEVICE PERFORMANCE SPECIFICATION Revision 3.0 MTD/PS-0195 April 18, 2008 KODAK KAF-1001E IMAGE SENSOR 1024 H X 1024 (V) FULL-FRAME CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4


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    PDF MTD/PS-0195 KAF-1001E 450ke 500ke. MTD/PS-0666 KAF-1001

    Untitled

    Abstract: No abstract text available
    Text: KAF-1001 IMAGE SENSOR 1024 H X 1024 (V) FULL FRAME CCD IMAGE SENSOR JUNE 18, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0033 KAF-1001 Image Sensor TABLE OF CONTENTS Summary Specification . 4


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    PDF KAF-1001 PS-0033 PS-0033

    BK7G18

    Abstract: ADC hard radiation STAR-1000 STAR1000-BK7 STAR1000BK7
    Text: STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. ■ 1024 by 1024 pixels on 15 mm pitch. ■ Radiation tolerant design. ■ On-chip double sampling circuit to cancel Fixed Pattern Noise.


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    PDF STAR1000 STAR1000 10-bit JLCC-84 BK7G18 ADC hard radiation STAR-1000 STAR1000-BK7 STAR1000BK7

    FillFactory

    Abstract: STAR1000 STAR1000 FPGA BK7G18 CYIS1SM1000AA-HHC CYIS1SM1000AA-HQC JESD22 STAR1000-BK7 STAR250 CMOS image sensor with global shutter
    Text: STAR1000 STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Key Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. • 1024 by 1024 pixels on 15 µm pitch. • Radiation tolerant design. • On-chip double sampling circuit to cancel Fixed Pattern


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    PDF STAR1000 STAR1000 10-bit JLCC-84 BK7G18 FillFactory STAR1000 FPGA CYIS1SM1000AA-HHC CYIS1SM1000AA-HQC JESD22 STAR1000-BK7 STAR250 CMOS image sensor with global shutter

    FillFactory

    Abstract: BK7G18 glass STAR1000 STAR1000 FPGA BK7G18 CYIS1SM1000AA-HHC CYIS1SM1000AA-HQC JESD22 STAR1000-BK7 STAR250
    Text: STAR1000 STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Key Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. • 1024 by 1024 pixels on 15 µm pitch. • Radiation tolerant design. • On-chip double sampling circuit to cancel Fixed Pattern


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    PDF STAR1000 STAR1000 10-bit JLCC-84 BK7G18 FillFactory BK7G18 glass STAR1000 FPGA CYIS1SM1000AA-HHC CYIS1SM1000AA-HQC JESD22 STAR1000-BK7 STAR250

    Potentiometer 25K

    Abstract: AD5235 AD5235BRU25 AD5235BRU250 M68HC11 TSSOP-16 walt
    Text: PRELIMINARY TECHNICAL DATA a Nonvolatile Memory, Dual 1024 Position Digital Potentiometers AD5235 FEATURES Dual, 1024 Position Resolution 25K, 250K Ohm Terminal Resistance with 50ppm/°C Tempco Nonvolatile Memory Preset SPI Compatible Serial Data Input with Readback Function


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    PDF AD5235 50ppm/ Potentiometer 25K AD5235 AD5235BRU25 AD5235BRU250 M68HC11 TSSOP-16 walt

    ADC hard radiation

    Abstract: Star1000 Radiation Detector BK7G18 glass FillFactory STAR1000 1M Pixel Radiation Hard BK7G18 image sensor mono medical temperature sensor STAR1000BK7
    Text: STAR1000 STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Key Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. • 1024 by 1024 pixels on 15 µm pitch. • Radiation tolerant design. • On-chip double sampling circuit to cancel Fixed Pattern


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    PDF STAR1000 STAR1000 10-bit JLCC-84 BK7G18 ADC hard radiation Radiation Detector BK7G18 glass FillFactory STAR1000 1M Pixel Radiation Hard image sensor mono medical temperature sensor STAR1000BK7

    Untitled

    Abstract: No abstract text available
    Text: a Nonvolatile Memory, Dual 1024-Position Programmable Resistors ADN2850* FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Full-Scale Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection


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    PDF 1024-Position ADN2850* 100-Year MO-220 16-Lead RU-16) MO-153AB C02660â

    400H

    Abstract: ADN2850 ADN2850BCP25 ADN2850BCP250 TSSOP-16
    Text: PRELIMINARY TECHNICAL DATA a Nonvolatile Memory, Dual 1024 Position Programmable Resistors ADN2850 FEATURES Dual, 1024 Position Resolution 25K, 250K Ohm Terminal Resistance Low Temperature Coefficient - 35ppm/ °C Nonvolatile Memory Preset SPI Compatible Serial Data Input with Readback Function


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    PDF ADN2850 35ppm/ ADN2850 16-Lead CP-16) 400H ADN2850BCP25 ADN2850BCP250 TSSOP-16

    BCP25

    Abstract: laser diode spice model simulation 10xxxxh 8XXXXX hdmi shift SDI BCP250 APD spice model
    Text: a Nonvolatile Memory, Dual 1024-Position Programmable Resistors ADN2850* FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Full-Scale Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection


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    PDF 1024-Position ADN2850* ADN2850 l-potentiometers/adn2850/products/product 10-Feb-2010 BCP25 laser diode spice model simulation 10xxxxh 8XXXXX hdmi shift SDI BCP250 APD spice model

    BCP25

    Abstract: 2850B25 ADN2850 ADN2850BCP25 ADN2850BCP25-RL7 TSSOP-16 200H 408C E 102H transistor
    Text: a Nonvolatile Memory, Dual 1024-Position Programmable Resistors ADN2850* FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Full-Scale Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection


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    PDF 1024-Position ADN2850* 100-Year C02660 BCP25 2850B25 ADN2850 ADN2850BCP25 ADN2850BCP25-RL7 TSSOP-16 200H 408C E 102H transistor

    e2v ccd

    Abstract: CCD47-20 CCD4720
    Text: CCD47–20 Back Illuminated High Performance AIMO Back Illuminated CCD Sensor FEATURES * 1024 by 1024 1:1 Image Format * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Frame Transfer Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection


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    PDF CCD47 e2v ccd CCD47-20 CCD4720

    CCD47-20

    Abstract: CCD4720 S11071 ccd sensor back illuminated
    Text: CCD47-20 Back Illuminated NIMO High Performance NIMO Back Illuminated CCD Sensor FEATURES * 1024 by 1024 1:1 Image Format * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Frame Transfer Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection


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    PDF CCD47-20 CCD4720 S11071 ccd sensor back illuminated

    CCD47-10

    Abstract: Scientific Imaging Technologies
    Text: CCD47-10 AIMO Back Illuminated Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Nominal 1056 by 1027 Usable Pixels * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection


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    PDF CCD47-10 Scientific Imaging Technologies

    CCD47-10

    Abstract: e2v CCD57-10
    Text: CCD47-10 NIMO Back Illuminated Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Nominal 1056 by 1027 Usable Pixels * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection


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    PDF CCD47-10 e2v CCD57-10

    ccd47-10

    Abstract: Scientific Imaging Technologies
    Text: CCD47-10 AIMO Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Image Format * Image Area 13.3 x 13.3 mm * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection * Very Low Noise Output Amplifiers * Gated Dump Drain on Output Register


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    PDF CCD47-10 Scientific Imaging Technologies

    8C740

    Abstract: CCD47-10
    Text: CCD47-10 NIMO Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Nominal * Image Area 13.3 x 13.3 mm * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection * Very Low Noise Output Amplifiers * Gated Dump Drain on Output Register


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    PDF CCD47-10 8C740

    e2v ccd

    Abstract: CCD47-20 7133A 8C740 CCD4720 scientific imaging technologies A1A-CCD47-20 ccd sensor back illuminated CCD-Sensor for e2v CCD47
    Text: CCD47-20 High Performance CCD Sensor FEATURES * 1024 by 1024 1:1 Image Format * Image Area 13.3 x 13.3 mm * Frame Transfer Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection * Very Low Noise Output Amplifiers * Gated Dump Drain on Output Register


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    PDF CCD47-20 CCD47-20 sp243 CCD47-20, e2v ccd 7133A 8C740 CCD4720 scientific imaging technologies A1A-CCD47-20 ccd sensor back illuminated CCD-Sensor for e2v CCD47

    KAF-1401E

    Abstract: kodak ccd kaf-140
    Text: KAF-1001E Performance Specification KAF - 1001E 1024 H x 1024(V) Pixel Enhanced Response Full-Frame CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650 Revision 2.0 March 19, 2004 Eastman Kodak Company - Image Sensor Solutions


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    PDF KAF-1001E 1001E 450ke 500ke. KAF-1401E kodak ccd kaf-140

    CCD4720

    Abstract: CCD47-20
    Text: CCD47-20 High Performance CCD Sensor FEATURES * 1024 by 1024 1:1 Image Format * Image Area 13.3 x 13.3 mm * Frame Transfer Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection * Very Low Noise Output Amplifiers * Gated Dump Drain on Output Register


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    PDF CCD47-20 CCD4720

    TRANSISTOR S2d

    Abstract: TK-10 TRANSISTOR S1d
    Text: TEKTRONIX INC/ INTEGRATE» T C I C i/ l\ SIE » a^Qbiaq qddditm INTEGRATED CIRCUITS OPERATION CHARGE COUPLED DEVICES q • SPECIFICATIONS ] OPERATING INFORMATION ! ü Front Illuminated or thinned back Illuminated* ü Larga area format: 1024 by 1024 pixels


    OCR Scan
    PDF TK1024A/October TK1024 TRANSISTOR S2d TK-10 TRANSISTOR S1d