100YW Search Results

S443

Abstract: idt71682 s448 16k nmos dynamic ram S447
Contextual Info: C M O S STATIC RAMS 1 6 K 4 K x 4-B IT IDT 71681SA/LA IDT 71682SA/LA Separate Data Inputs and Outputs FEATURES: DESCRIPTION: • Separate data inputs and outputs • IDT71681SA/LA: outputs track inputs during write mode • IDT71682/SA/LA: high impedance outputs during write mode

Contextual Info: CMOS STATIC RAM 256K 256K x 1-BIT PRELIMINARY IS !” FEATURES: DESCRIPTION: • The ID T71257 Is a 2 6 2 ,144-bit high-speed static RAM organized as 256K x 1. It is fabricated using ID T’s high-performance, high-rellability C E M O S technology. This state-of-the-art technology,

IDT71258S-35

Abstract: IDT71258S35
Contextual Info: CMOS STATIC RAM 256K 64Kx 4-BIT p r e l im in a r y IDT71258S IDT71258S IDT71258L FEATURES: DESCRIPTION: • The ID T 7 1258 is a 262,144-bit hig h -sp ee d sta tic RAM organized as 64K x 4. It is fa b rica te d u sin g ID T’s h ig h -p erform a n ce, high-rella b ility C E M O S te ch n o lo g y. T h is state-of-the-art te ch n olo gy, c o m ­

Contextual Info: M È k C M O S STATIC RAM 6 4 K 6 4 K x 1 -BIT IDT7187S IDT7187L Integrateci D eviceTechnology. Inc FEATURES: DESCRIPTION: • The ID T7187 is a 65,536-bit h ig h -s p e e d sta tic RAM organized as 64K x 1. It is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlgh-reliabllity te c h n o lo g y , C E M O S . A c ce ss tim e s as fast as 15ns are available

2316 rom

Abstract: eprom 2716 2816 eeprom rom 2716 2816 rom memory EPROM 2708 2708 eprom 2716 eeprom eeprom 2716 2316 EPROM
Contextual Info: MV23SC16 ADVANCEINFORMATIONC M O S A dvance in fo rm a tio n is is s u e d to a d vise C u s to m e rs o f new a d d itio n s to th e P le ssey S e m ic o n d u c to rs range w h ic h , n e ve rth e le ss, s t ill have ‘p re -p ro d u c tio n ’ s ta tu s . D e ta ils g ive n m ay, th e re fo re , ch a n g e w ith o u t n o tic e a lth o u g h w e w o u ld e xp e c t th is p e rfo rm a n c e d a ta to

k200a02

Abstract: SN63A solder SN63A
Contextual Info: WW .100Y.C M.TW WW .100Y.C M.TW WW 00Y.CO .TW WW 00Y.CO .TW W W W T .1 W.1 Y.COM W M. OM W O W C . W C W Y W .T W Y. W .100 M.T .100 OM W M.T .100 O W C . O W W C W Y .C W WW .100Y. .TW WW No.21-S-004.D-E1 M.T .100 .TW 00Y M O 1 W M . O W C . W Technology

Contextual Info: ELPAQ EMS256K8B A division of ELMO Semiconductor 35 - 55ns 2Mb CMOS STATIC SRAM FEATURES Pin Configuration High density SRAM module wc Organized as 262,144 x 8 A16 c Access time 35 - 55ns A12 A14 A7 Low power consumption

CC14M

Abstract: 10x38 gg C10M4I C10G6 fuse C10G10 fuse 32A 10x38 690V CD1038G25 10x31mm C22G80 microswitch bussmann
Contextual Info: 22X58 14X51 10X38 8X32 WW .100Y.C M.TW WW .100Y.C M.TW WW 00Y.CO .TW WW 00Y.CO .TW W W W T .1 W.1 Y.COM W M. OM W O W C . W C W FuseWLinks.100 Y .T W Y. W Voltage Low M.T .100 Industrial OM W M.T .100 O W C . O W W C W Y W WW .100Y. .TW WW .100Y.C M.TW M.T

Contextual Info: Integrated DeviceTechnology Inc CM O S STATIC RAM 16K 16K x 1-BIT IDT 6167SA IDT 6167LA FEA T U R ES : DESCRIPTION: • The IDT6167 Is a 16,384-blt high-speed static RAM organized as 16K x 1. The part Is fabricated using IDT’s high-performance, highreliabillty technology-CEM OS. This state-of-the-art technology,

2316 rom

Abstract: 2316 8 bit rom 2716 2k eprom 27C58 ic rom 2816 2816 rom pin diagram of ic 2716 2k rom 24pin Motorola
Contextual Info: MV23SC16 _ ADVANCE INFORMATION C M O S Advance inform ation is issued to advise Customers of new additions to the Plessey Sem iconductors range which, nevertheless, s till have ‘pre-production’ status. Details given may, therefore, change w ithout notice although we would expect this performance data to