100V TRANSISTOR NPN 5A Search Results

ZX5T853Z

Abstract: ZX5T853ZTA
Contextual Info: ZX5T853Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in

SOT89 transistor marking 5A

Abstract: ZXTN2011Z ZXTN2011ZTA
Contextual Info: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

Contextual Info: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZXTN

Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor
Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZXTN2011G

Abstract: ZXTN2011GTA ZXTN2011GTC
Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZX5T853G

Abstract: ZX5T853GTA ZX5T853GTC
Contextual Info: ZX5T853G 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC

Contextual Info: ZX5T853G 100V NPN LOW SAT M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC

Contextual Info: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data •           BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current 625mW Power dissipation

Contextual Info: MJD31C 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data •          BVCEO > 100V IC = 3A high Continuous Collector Current ICM = 5A Peak Pulse Current Ideal for Power Switching or Amplification Applications Complementary PNP Type: MJD32C

FMMT634Q

Contextual Info: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current

2SD1842

Abstract: 2SB1232 ITR09408 ITR09409 ITR09410
Contextual Info: Ordering number:ENN3261A 2SB1232 : PNP Epitaxial Planar Silicon Transistor 2SD1842 : NPN Triple Diffused Planar Silicon Transistor 2SB1232/2SD1842 100V/40A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters, and other

FZT853

Contextual Info: A Product Line of Diodes Incorporated Green FZT853 100V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 100V • • IC = 6A high Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound. •

ZXTN19100CFF

Abstract: TS16949 ZXTN19100CFFTA ZXTP19100CFF ZXTN
Contextual Info: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the

Contextual Info: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the

Contextual Info: Ordering number: EN3 7 2 0 2SB1388/2SD2093 2SB1388 : PNP Epitaxial Planar Silicon Transistor 2SD2093 : NPN Triple Diffused Planar Silicon Transistor 100V/10A Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

2N3741

Abstract: SHD4181 SHD4181A SHD4181B SHD4182 SHD4182A SHD4182B SHD4183 SHD4183A SHD4183B
Contextual Info: POWER TRANSISTOR BIPOLAR POWER TRANSISTORS Ic Max. Contin. Collector Current Amps NPN / PNP VCBO (Collector to Base Voltage) PACKAGE TYPE NPN 8.0 5.0 S 4.0 HD-5 CONFIG. 80V SINGLE SHD4182 SINGLE SINGLE S 4.0 HD-5A S HD-5B 100V SHD4181 SHD4184 SHD4183 SHD4182A

npn DARLINGTON 10A

Abstract: TIP147T NPN Darlington Transistor TIP142T darlington power transistor 10a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Complement to Type TIP147T APPLICATIONS

ZXTN2011Z

Contextual Info: A Product Line of Diodes Incorporated ZXTN2011Z Green 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > 100V IC = 4.5A high Continuous Current ICM = 10A Peak Pulse Current

Contextual Info: MJD31CQ 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features           

Contextual Info: KSD73 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY HIGH POWER AMPLIFIER • Collector-Base Voltage VCBo = 100V • Collector Current lc = 5A • Collector Dissipation Pc = 30W Tc=25,C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit V VcEO 100

BDY90A

Abstract: Vceo 100V Ic 0.5A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY90A DESCRIPTION •High Current Capability ·Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching

ksd73

Abstract: npn power transistor 100v list
Contextual Info: KSD73 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY HIGH POWER AMPLIFIER TO-220 • Collector-Base Voltage: VCBO = 100V • Collector Current: IC = 5A • Collector Dissipation: PC = 30W TC=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage

BDW42

Abstract: BDW47 147 B transistor npn DARLINGTON 10A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A

Contextual Info: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES ・High DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ・High Collector Breakdown Voltage : VCEO=100V(Min.)