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    100V 20A FAST RECOVERY POWER DIODE Search Results

    100V 20A FAST RECOVERY POWER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    100V 20A FAST RECOVERY POWER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBRF20100CT

    Abstract: JA60 AV-2015
    Text: SEMICONDUCTOR MBRF20100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=20A. Repetitive Peak Reverse Voltage : VRRM=100V. K Fast Reverse Recovery Time : trr=35ns.


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    PDF MBRF20100CT MBRF20100CT JA60 AV-2015

    100v 20a fast recovery power diode

    Abstract: Power MOSFET 50V 20A MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET
    Text: LTP40N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application BVDSS=100V , • DC to DC converter


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    PDF LTP40N10 to175 100v 20a fast recovery power diode Power MOSFET 50V 20A MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET

    Power MOSFET 50V 20A

    Abstract: 100V, 200 A MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 40A 100V
    Text: LTD35N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant


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    PDF LTD35N10 to175 Power MOSFET 50V 20A 100V, 200 A MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 40A 100V

    byv32

    Abstract: 10A, 100v fast recovery diode power Diode 200V 10A anode common fast recovery diode dual BYV32-200TMF 2A Fast Recovery Diodes DUAL DIODES COMMON ANODE TO220 to-276ab common anode fast to220 fast rectifier common anode
    Text: BYV32–50M0 BYV32–100M BYV32–150M BYV32–200M MECHANICAL DATA Dimensions in mm 4.6 0.8 0 .7 6 0 .0 3 0 m in . 1 0 .6 1 3 .5 16.5 3.6 Dia. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 1 3 .7 0 3 .6 0 (0 .1 4 2 ) M a x . 3 1 0 .6 9 (0 .4 2 1 )


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    PDF BYV32 BYV32-200SMDCECC O276AB) BYV32-200TM BYV32-200TMF BYV32-200XM BYV32-50ASMD 10A, 100v fast recovery diode power Diode 200V 10A anode common fast recovery diode dual 2A Fast Recovery Diodes DUAL DIODES COMMON ANODE TO220 to-276ab common anode fast to220 fast rectifier common anode

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    Abstract: No abstract text available
    Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50SMD BYV32-150SMD BYV32-100SMD BYV32-200SMD • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For Switching Power Supplies, Inverters And As


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    PDF BYV32-50SMD BYV32-150SMD BYV32-100SMD BYV32-200SMD BYV32-SMD O-276AB)

    Untitled

    Abstract: No abstract text available
    Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As


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    PDF BYV32-50M BYV32-150M BYV32-100M BYV32-200M O-257AB) BYV32-M O220M BYV32-xxxM BYV32-xxxAM

    Untitled

    Abstract: No abstract text available
    Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As


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    PDF BYV32-50M BYV32-150M BYV32-100M BYV32-200M O-257AB) BYV32-M O220M BYV32-xxxM BYV32-xxxAM

    BYV32-200

    Abstract: 100v 20a fast recovery power diode
    Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As


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    PDF BYV32-50M BYV32-150M BYV32-100M BYV32-200M O-257AB) O220M BYV32-xxxM BYV32-xxxAM BYV32-xxxRM BYV32-200 100v 20a fast recovery power diode

    Untitled

    Abstract: No abstract text available
    Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50SMD BYV32-150SMD BYV32-100SMD BYV32-200SMD • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For Switching Power Supplies, Inverters And As


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    PDF BYV32-50SMD BYV32-150SMD BYV32-100SMD BYV32-200SMD BYV32-SMD O-276AB)

    100SMD

    Abstract: BYV32-SMD BYV32
    Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50SMD BYV32-150SMD BYV32-100SMD BYV32-200SMD • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For Switching Power Supplies, Inverters And As


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    PDF BYV32-50SMD BYV32-150SMD BYV32-100SMD BYV32-200SMD BYV32-SMD O-276AB) 100SMD BYV32

    Untitled

    Abstract: No abstract text available
    Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As


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    PDF BYV32-50M BYV32-150M BYV32-100M BYV32-200M O-257AB) O220M BYV32-xxxM BYV32-xxxAM BYV32-xxxRM

    GTO thyristor 1200V 50A

    Abstract: scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A igbt for HIGH POWER induction heating 600V igbt dc to dc buck converter SWITCHING WELDING BY MOSFET igbt circuit for induction melting
    Text: POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 2 Power Semiconductor Solutions 2009 Quick Reference Guide ● IGBTs ● MOSFET MODULES ● IPMs ● ● DIPIPM ● ● ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES


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    k07n120

    Abstract: Q67040-S4280 PG-TO-247-3 SKW07N120
    Text: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


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    PDF SKW07N120 SKW07N120 k07n120 Q67040-S4280 PG-TO-247-3

    K25N120

    Abstract: Q67040-S4282
    Text: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter G - SMPS • NPT-Technology offers:


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    PDF SKW25N120 40lower SKW25N120 K25N120 Q67040-S4282

    Untitled

    Abstract: No abstract text available
    Text: BY 233-200 →600 FAST RECOVERY RECTIFIER DIODES LOW SWITCHING LOSSES LOW PEAK RECOVERY CURRENT IRM THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C UNDER USERS CONDITIONS Cathode connected to case APPLICATIONS MOTOR CONT RO LS FREE-WHEELING


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    PDF O220AC

    fast recovery diode 1200V 100ns

    Abstract: Q67040-S4281 SKW15N120
    Text: Preliminary SKW15N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


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    PDF SKW15N120 O-247AC Q67040-S4281 Mar-00 fast recovery diode 1200V 100ns Q67040-S4281 SKW15N120

    HUR1630CT

    Abstract: No abstract text available
    Text: HUR1630CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR1630CT Symbol VRRM V 300 Test Conditions IFRMS IFAVM TC=130oC; rectangular, d=0.5 IFSM


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    PDF HUR1630CT O-220AB 130oC; 180uH 10kHz; HUR1630CT

    Untitled

    Abstract: No abstract text available
    Text: BY 233-200 →600 FAST RECOVERY RECTIFIER DIODES LOW SWITCHING LOSSES LOW PEAK RECOVERY CURRENT IRM THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C UNDER USERS CONDITIONS Cathode connected to case APPLICATIONS MOTOR CONTROLS FREE-WHEELING


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    PDF O220AC

    BY 233-600

    Abstract: No abstract text available
    Text: BY 233-600  FAST RECOVERY RECTIFIER DIODES LOW SWITCHING LOSSES LOW PEAK RECOVERY CURRENT IRM THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr ANDIRM AT100°C UNDER USERS CONDITIONS Cathode connected to case APPLICATIONS MOTOR CONTROLS FREE-WHEELING


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    PDF AT100 O220AC BY 233-600

    SKW07N120

    Abstract: No abstract text available
    Text: Preliminary SKW07N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


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    PDF SKW07N120 O-247AC Q67040-S4280 Mar-00 SKW07N120

    fast recovery diode 1200V 100ns

    Abstract: SKW25N120 100w smps
    Text: Preliminary SKW25N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


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    PDF SKW25N120 O-247AC Q67040-S4282 Mar-00 fast recovery diode 1200V 100ns SKW25N120 100w smps

    BY 233-600

    Abstract: No abstract text available
    Text: BY 233-600 FAST RECOVERY RECTIFIER DIODES LOW SWITCHING LOSSES LOW PEAK RECOVERY CURRENT IRM THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C UNDER USERS CONDITIONS Cathode connected to case APPLICATIONS MOTOR CONTROLS FREE-WHEELING


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    PDF O220AC BY 233-600

    HUR830

    Abstract: No abstract text available
    Text: HUR830 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR830 Symbol VRRM V 300 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580


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    PDF HUR830 O-220AC 130oC; HUR830

    600v 10A ultra fast recovery diode

    Abstract: HUR10100 HUR10120
    Text: HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR10100 HUR10120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G


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    PDF HUR10100, HUR10120 O-220AC HUR10100 600v 10A ultra fast recovery diode HUR10100 HUR10120