b063
Abstract: Concord Electronics DDG0133 Pirgo Electronics
Text: nnA ^ 5 9 2 A P T :A P I ELECTRONICS INC ELECTRONICS 13A0133 INC POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP T O -5 100V at 100mA ICEX lOOfiA max at VB E off =1.5V, V CE=100V ICBO 100p,A at 100V XEBO 0.5mA at 7V HPE • <40 min at Ic=100mA, V CE=1V vBE(sat)
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13A0133
DDG0133
100mA
100mA,
500mA,
100mA
125mA
b063
Concord Electronics
Pirgo Electronics
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PDF
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Untitled
Abstract: No abstract text available
Text: nn4^q92 A P I A P I ELECTRONICS 13A0133 ELECTRONICS INC" INC IB De J 0043STB DD00133 D J l POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP TO-5 100V at 100mA XCEK 100|i,A max at VB E off =1.5V, V QE=100V ICBO 100[xA at 100V XEBO 0.5mA at 7V HPE < 40 min at Ic=100mA, V CE=1V
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13A0133
0043STB
DD00133
PG6003
100mA
100mA,
500mA,
125mA
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PDF
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fzt 655
Abstract: FZT marking code
Text: A Product Line of Diodes Incorporated Green FZT7053 100V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 100V BVCBO > 100V IC = 1.5A high Continuous current hFE > 10k for very high gain @ 100mA
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FZT7053
OT223
100mA
AEC-Q101
J-STD-020
MIL-STD-202,
OT223
FZT7053
DS31895
fzt 655
FZT marking code
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PDF
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PIR60
Abstract: No abstract text available
Text: 0043592 A P I ELECTRONICS A P I '7 INC 1 7 ^ a > ? ~«i/ " m i>ËÏ 00435=15 0000131 7 I . y • . 13 A 013 "il 7: ELECTRONICS INC POWER TRANSISTOR ENGINEERING BULLETIN ' '1 AMP NPN TO-5 •CEX PG5003 -BVCEO 100V at 100mA 100UA max at V CE=100V VBE off = 1 »5V
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IA3A0131
100mA
500mA,
PIR60
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PDF
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API Electronics
Abstract: iC-LA vce 1v Pirgo Electronics
Text: 0043592 A P I E L E CT RO N IC S A P I ELECTRONICS INC INC POWER TRANSISTOR ENGINEERING BULLETIN • . 13 A 01 31 7^o> *13 D E I 00435=15 -• _ 0000131 7 - y - ; '1 AMP NPN TO-5 PG5003 100V at 100mA .BV CEO "CEX lOO^A max at VCE=100V CBO . VBE off =1»5V
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OCR Scan
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100mA
500mA,
API Electronics
iC-LA
vce 1v
Pirgo Electronics
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PDF
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3A 100V npn LOW SATURATION VOLTAGE
Abstract: TSD2098 TSD2098A
Text: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics
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TSD2098A
OT-89
100mA
TSD2098ACY
3A 100V npn LOW SATURATION VOLTAGE
TSD2098
TSD2098A
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A08 transistor
Abstract: No abstract text available
Text: TSD965A Low Vcesat NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics
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TSD965A
100mA
TSD965ACT
A08 transistor
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PDF
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t6753
Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725
Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage
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ZDT6753
OT223)
T6753
100MHz
500mA,
FZT653
-50mA,
-500mA,
-100mA,
t6753
transistor ic1A
ic1a
ZDT6753
FZT753
DSA003725
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PDF
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FMMT493
Abstract: FMMT593 DSA003699
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 1.0 +-=5V V
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FMMT593
FMMT493
100mA
-50mA,
100MHz
-250mA
-500mA,
FMMT493
FMMT593
DSA003699
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 200 1.0 +-=5V
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FMMT593
FMMT493
100mA
-50mA,
100MHz
-250mA
-500mA,
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PDF
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FZT951
Abstract: FZT953 fzt853 FZT851 DSA003718
Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps
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FZT951
FZT953
OT223
FZT951
FZT851
FZT853
FZT953
fzt853
FZT851
DSA003718
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PDF
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ztx953
Abstract: IN 3319 B DSA003779
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX953 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer hFE MIN. TYP. MAX. UNIT CONDITIONS. -880 -1100 mV IC=-4A, VCE=-1V*
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ZTX953
-10mA,
100ms
ztx953
IN 3319 B
DSA003779
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Untitled
Abstract: No abstract text available
Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage
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ZDT6753
OT223)
T6753
-200mA*
-100mA*
-50mA,
-500mA,
-100mA,
100MHz
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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PDF
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pnp transistor 1000v
Abstract: FZT758 FZT658 DSA003716
Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT758 ISSUE 2 FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE FZT658 PARTMARKING DETAIL FZT758 TYPICAL CHARACTERISTICS IC/IB =10 1.6
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OT223
FZT758
FZT658
-200mA,
-20mA,
20MHz
-100mA,
-100V
-20mA
pnp transistor 1000v
FZT758
FZT658
DSA003716
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PDF
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IB 100MA NPN
Abstract: HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A
Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃
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HBDW94C
O-220
-100V
-100V,
-20mA
-100mA
IB 100MA NPN
HBDW93C
HBDW94C
VCE 100V transistor
power darlington transistor 10A
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PDF
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ZXT753
Abstract: No abstract text available
Text: ZTX653DCSM ZTX753DCSM COMPLEMENTARY NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm inches 1 4 0.64 ± 0.06 (0.025 ± 0.003) 3 2 2.54 ± 0.13 (0.10 ± 0.005)
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ZTX653DCSM
ZTX753DCSM
ZTX653
ZXT753
-100mA
100MHz
-500mA
-50mA
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PDF
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zxt753
Abstract: ZTX653 equivalent ZTX753 data ZTX653 ZTX653DCSM ZTX753 ZTX753DCSM 500mAVCC
Text: ZTX653DCSM ZTX753DCSM NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 1 4 4.32 ± 0.13 (0.170 ± 0.005)
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ZTX653DCSM
ZTX753DCSM
ZTX653
ZXT753
-500mA
-50mA
zxt753
ZTX653 equivalent
ZTX753 data
ZTX653
ZTX653DCSM
ZTX753
ZTX753DCSM
500mAVCC
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FMMT593 ✪ COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 E C B * +25 ° C I /I =10 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C + * I+/I*=50 I /I =10 +-=5V + * V I /I =10
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FMMT593
FMMT493
100mA
100ms
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PDF
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FZT753
Abstract: FZT653 DSA003715
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT753 TYPICAL CHARACTERISTICS 0.6 td Switching time - Volts 0.4 I+ /I*=10 V 0.3 0.2 tf ts ns ns 140 E COMPLEMENTARY TYPE 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0.0001 0.001 0.01 0.1 1 PARTMARKING DETAIL
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OT223
FZT753
FZT653
FZT753
FZT653
DSA003715
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PDF
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FZT653
Abstract: FZT753 DSA003712
Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FZT653 ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C COMPLEMENTARY TYPE FZT753 PARTMARKING DETAIL FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT653
FZT753
FZT653
FZT753
DSA003712
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Bv 42 transistor
Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
Text: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2013G
OT223
-100V
OT223
ZXTP2013GTA
ZXTP2013GTC
DEV26100
Bv 42 transistor
zxtP
sot223 device Marking
ZXTP2013G
ZXTP2013GTA
ZXTP2013GTC
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PDF
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ZX5T953GTA
Abstract: ZX5T953G ZX5T953GTC x5t953
Text: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC
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ZX5T953G
OT223
-100V
OT223
ZX5T953GTA
ZX5T953GTC
ZX5T953GTA
ZX5T953G
ZX5T953GTC
x5t953
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PDF
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ZXTP2013Z
Abstract: ZXTP2013ZTA
Text: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZXTP2013Z
-100V
ZXTP2013ZTA
ZXTP2013Z
ZXTP2013ZTA
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