100V,100MA TRANSISTOR Search Results

b063

Abstract: Concord Electronics DDG0133 Pirgo Electronics
Contextual Info: nnA ^ 5 9 2 A P T :A P I ELECTRONICS INC ELECTRONICS 13A0133 INC POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP T O -5 100V at 100mA ICEX lOOfiA max at VB E off =1.5V, V CE=100V ICBO 100p,A at 100V XEBO 0.5mA at 7V HPE • <40 min at Ic=100mA, V CE=1V vBE(sat)

Contextual Info: nn4^q92 A P I A P I ELECTRONICS 13A0133 ELECTRONICS INC" INC IB De J 0043STB DD00133 D J l POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP TO-5 100V at 100mA XCEK 100|i,A max at VB E off =1.5V, V QE=100V ICBO 100[xA at 100V XEBO 0.5mA at 7V HPE < 40 min at Ic=100mA, V CE=1V

fzt 655

Abstract: FZT marking code
Contextual Info: A Product Line of Diodes Incorporated Green FZT7053 100V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 100V BVCBO > 100V IC = 1.5A high Continuous current hFE > 10k for very high gain @ 100mA

PIR60

Contextual Info: 0043592 A P I ELECTRONICS A P I '7 INC 1 7 ^ a > ? ~«i/ " m i>ËÏ 00435=15 0000131 7 I . y • . 13 A 013 "il 7: ELECTRONICS INC POWER TRANSISTOR ENGINEERING BULLETIN ' '1 AMP NPN TO-5 •CEX PG5003 -BVCEO 100V at 100mA 100UA max at V CE=100V VBE off = 1 »5V

API Electronics

Abstract: iC-LA vce 1v Pirgo Electronics
Contextual Info: 0043592 A P I E L E CT RO N IC S A P I ELECTRONICS INC INC POWER TRANSISTOR ENGINEERING BULLETIN • . 13 A 01 31 7^o> *13 D E I 00435=15 -• _ 0000131 7 - y - ; '1 AMP NPN TO-5 PG5003 100V at 100mA .BV CEO "CEX lOO^A max at VCE=100V CBO . VBE off =1»5V

3A 100V npn LOW SATURATION VOLTAGE

Abstract: TSD2098 TSD2098A
Contextual Info: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics

A08 transistor

Contextual Info: TSD965A Low Vcesat NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics

t6753

Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage

FMMT493

Abstract: FMMT593 DSA003699
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 1.0 +-=5V V

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 200 1.0 +-=5V

FZT951

Abstract: FZT953 fzt853 FZT851 DSA003718
Contextual Info: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps

ztx953

Abstract: IN 3319 B DSA003779
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX953 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer hFE MIN. TYP. MAX. UNIT CONDITIONS. -880 -1100 mV IC=-4A, VCE=-1V*

Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

pnp transistor 1000v

Abstract: FZT758 FZT658 DSA003716
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT758 ISSUE 2 – FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE – FZT658 PARTMARKING DETAIL – FZT758 TYPICAL CHARACTERISTICS IC/IB =10 1.6

IB 100MA NPN

Abstract: HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A
Contextual Info: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃

ZXT753

Contextual Info: ZTX653DCSM ZTX753DCSM COMPLEMENTARY NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm inches 1 4 0.64 ± 0.06 (0.025 ± 0.003) 3 2 2.54 ± 0.13 (0.10 ± 0.005)

zxt753

Abstract: ZTX653 equivalent ZTX753 data ZTX653 ZTX653DCSM ZTX753 ZTX753DCSM 500mAVCC
Contextual Info: ZTX653DCSM ZTX753DCSM NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 1 4 4.32 ± 0.13 (0.170 ± 0.005)

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FMMT593 ✪ COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 E C B * +25 ° C I /I =10 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C + * I+/I*=50 I /I =10 +-=5V + * V I /I =10

FZT753

Abstract: FZT653 DSA003715
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT753 TYPICAL CHARACTERISTICS 0.6 td Switching time - Volts 0.4 I+ /I*=10 V 0.3 0.2 tf ts ns ns 140 E COMPLEMENTARY TYPE – 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0.0001 0.001 0.01 0.1 1 PARTMARKING DETAIL –

FZT653

Abstract: FZT753 DSA003712
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FZT653 ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C COMPLEMENTARY TYPE – FZT753 PARTMARKING DETAIL – FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS.

Bv 42 transistor

Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
Contextual Info: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZX5T953GTA

Abstract: ZX5T953G ZX5T953GTC x5t953
Contextual Info: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC

ZXTP2013Z

Abstract: ZXTP2013ZTA
Contextual Info: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line