100P TRANSISTOR Search Results

Contextual Info: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 2 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.

CLF1G0035-100P

Abstract: sot1228 electromagnetic pulse jammers
Contextual Info: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 1 — 10 December 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.

PSMN015-100B

Abstract: PSMN015-100P
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA

PSMN015-100P,127

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA

Contextual Info: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

Contextual Info: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 2 — 10 November 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1.

BLF7G22LS-100P

Contextual Info: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 1 — 19 May 2011 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

flanged pin

Contextual Info: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

PSMN009-100B

Abstract: PSMN009-100P
Contextual Info: PSMN009-100P/100B N-channel enhancement mode field-effect transistor Rev. 01 — 29 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN009-100P in SOT78 TO-220AB

Contextual Info: BLF8G27LS-100P Power LDMOS transistor Rev. 2 — 20 December 2012 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance

Contextual Info: BLF8G27LS-100P Power LDMOS transistor Rev. 1 — 3 December 2012 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance

PSMN015-100B

Abstract: PSMN015-100P SOT404
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN015-100B, PSMN015-100P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V

PSMN015-100B

Abstract: PSMN015-100P transistor 100p
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN015-100B, PSMN015-100P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V

Contextual Info: BLF8G27LS-100P Power LDMOS transistor Rev. 3 — 18 March 2013 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance

PSMN015-100

Abstract: PSMN015-100P
Contextual Info: PSMN015-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 — 17 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for

PSMN009

Abstract: PSMN009100P PSMN009-100P
Contextual Info: PSMN009-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 30 September 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for

Contextual Info: TO -22 0A B PSMN009-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 4 — 27 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for

2931a

Abstract: 2931A datasheet TLC2262 tesoro r4 4.7k iC5A 4024 c1470n r5110k ic8b
Contextual Info: RX Coil R27 5.1k R28 100k IC7a R29 100k C16 120p R3 20k C9 100p IC7b R19 82k C10 130p DISC 100k R1 1.2k R2 12k +V R23 100k C1 470n C2 47n All transistors common small-signal type, i.e., 2N3904 & 2N3906 C15 33nF R26 5.1k TX Coil R64 10k R69 27k C17 220nF R30

Contextual Info: SST204 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)135 I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

E6C2-CWZ5B

Abstract: E6C2-CWZ1X AM26LS31 E69-C06B E69-C06M
Contextual Info: 00-07-13 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 37-598-18 Pulsgivare E6C2-CWZ5B 100p 37-598-34 Pulsgivare E6C2-CWZ5B 360p 37-598-59 Pulsgivare E6C2-CWZ5B 1000

Contextual Info: SST202 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)135 I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: SST203 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)135 I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: SST201 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)135 I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

SU2369

Contextual Info: SU2369 Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)50m I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)