100N30
Abstract: No abstract text available
Text: Model 100NXXAE RoHS Compliant Full Flange Attenuators 100 Watts General Specifications Features: • DC – See table 100 Watts ALN Ceramic Resistive Element Thick film Substrate ALN ceramic Cover Alumina Ceramic Mounting Flange Copper, Nickel plated per QQ-N-290
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100NXXAE
QQ-N-290
MIL-E-5400.
100N30AE
100N30
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nitride
Abstract: RFP-100NXXAF
Text: Model RFP-100NXXAF RoHS Compliant Flangeless Attenuators 100 Watts General Specifications Resistive Element Substrate Cover Leads Thick film Aluminum nitride ceramic Alumina ceramic 99% pure silver .005” thick Features: • DC – see chart • 100 Watts
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RFP-100NXXAF
MIL-E-5400.
inc800)
100NXXAF
nitride
RFP-100NXXAF
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Untitled
Abstract: No abstract text available
Text: Model 100NXXAF Flangeless Attenuator 100 Watts General Specifications Resistive Element Substrate Lead s : Thick film Aluminum Nitride ceramic 99.99% pure silver (.005” thick) Electrical Specifications Features: • DC – 3.0 GHz 100 Watts AlN Ceramic
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100NXXAF
MIL-E-5400.
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100NXXAE
Abstract: No abstract text available
Text: Model 100NXXAE Flangeless Attenuator 100 Watts General Specifications Resistive Element Substrate Mounting Flange Lead s : Thick film Aluminum Nitride ceramic Copper, Nickel plated per QQ-N-290 99.99% pure silver (.005” thick) Electrical Specifications Features:
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100NXXAE
QQ-N-290
MIL-E-5400.
100NXXAE
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Untitled
Abstract: No abstract text available
Text: Model 100NXXAF Flangeless Attenuator 100 Watts General Specifications Resistive Element Substrate Lead s : Thick film Aluminum Nitride ceramic 99.99% pure silver (.005” thick) Electrical Specifications Features: • DC – 3.0 GHz • 100 Watts • AlN Ceramic
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100NXXAF
MIL-E-5400.
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100N30A
Abstract: 100NXXAE 100N30
Text: Model 100NXXAE RoHS Compliant Full Flange Attenuators 100 Watts General Specifications Resistive Element Thick film Substrate ALN ceramic Cover Alumina Ceramic Mounting Flange Copper, Nickel plated per QQ-N-290 • DC – See table Lead s : 99.99% pure silver (.006” thick)
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100NXXAE
QQ-N-290
100N30AE
MIL-E-5400.
100N30A
100NXXAE
100N30
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Untitled
Abstract: No abstract text available
Text: Model 100NXXAE RoHS Compliant Full Flange Attenuators 100 Watts General Specifications Features: • DC – See table 100 Watts ALN Ceramic Resistive Element Thick film Substrate ALN ceramic Cover Alumina Ceramic Mounting Flange Copper, Nickel plated per QQ-N-290
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100NXXAE
QQ-N-290
MIL-E-5400.
100N30AE
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Untitled
Abstract: No abstract text available
Text: Model RFP-100NXXAF RoHS Compliant Flanged Resistors 100 Watts, 50Ω General Specifications Resistive Element Substrate Cover Leads Thick film Aluminum nitride ceramic Alumina ceramic 99% pure silver .005” thick Features: • DC – see chart • 100 Watts
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RFP-100NXXAF
MIL-E-5400.
100NXXAF
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tabella transistor equivalenti
Abstract: transistor equivalenti manuale equivalenti per transistor DELL 3000 1NU 108 DI-22 dell VOSTRO 1015 DISPLAY alfanumerico
Text: 7.5” TI-83 Manuale d'Istruzioni 10” TI83CALC.DOC TI 83 Inside Cover Bob Fedorisko Revised: 12/03/99 8:31 AM Printed: 12/03/99 8:31 AM Page 1 of 2 TI-83 CALCOLATORE GRAFICO MANUALE Copyright 1996, 2000 di Texas Instruments Incorporated. Importante Texas Instruments non rilascia alcuna garanzia, esplicita o
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TI-83
TI83CALC
TI-82
Indice-14
tabella transistor equivalenti
transistor equivalenti
manuale equivalenti per transistor
DELL 3000
1NU 108
DI-22
dell VOSTRO 1015
DISPLAY alfanumerico
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Untitled
Abstract: No abstract text available
Text: 2850-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
time100n
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Untitled
Abstract: No abstract text available
Text: 2851-3 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
time100n
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Untitled
Abstract: No abstract text available
Text: BSV15-6 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BSV15-6
Freq50M
time500n
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Untitled
Abstract: No abstract text available
Text: 2856-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq30M
time100n
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Untitled
Abstract: No abstract text available
Text: 2852-1 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq30M
time100n
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Untitled
Abstract: No abstract text available
Text: 2N2853-1 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)850m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N2853-1
Freq30M
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Untitled
Abstract: No abstract text available
Text: 2SA571 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.
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2SA571
Freq200M
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BC327PS
Abstract: No abstract text available
Text: BC327PS Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BC327PS
Freq100M
eq100M
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Untitled
Abstract: No abstract text available
Text: BC177PA Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BC177PA
Freq130M
eq130M
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Untitled
Abstract: No abstract text available
Text: BC177PAM Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BC177PAM
Freq130M
q130M
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Untitled
Abstract: No abstract text available
Text: BC337CP Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BC337CP
Freq100M
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Untitled
Abstract: No abstract text available
Text: BC177A Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.120 h(FE) Max. Current gain.
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BC177A
Freq200M
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Untitled
Abstract: No abstract text available
Text: 2N5141 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)6.0 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.
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2N5141
Freq300M
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Untitled
Abstract: No abstract text available
Text: BC327BP Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BC327BP
Freq100M
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Untitled
Abstract: No abstract text available
Text: BC177PAK Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BC177PAK
Freq130M
q130M
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