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Catalog Datasheet	MFG & Type	PDF	Document Tags
MN6147 Abstract: mn1400 MN6147 c L-13 MN6049 Text: MICROCOMPUTER and PERIPHERAL L S I’s P eriph eral L S I's E le c t r ic a l C h a r a c te ris tic s Fu nctio n T y p e No. CM O S F req u en cy M N6049 S y n th e s iz e r for TV T a = 2 5 "C PLL M N 6 14 2 Fre q u e n cy S y n th e s iz e r for FM /A M	OCR Scan	PDF	MN6049 12-Bit 58MHz) 200Hz 450kHz MN6I42 16-Lead MN1400 MN6049 MN6I45 MN6147 mn1400 MN6147 c L-13
Untitled Abstract: No abstract text available Text: INTRODUCTORY S « C lf o n o « l* S £ 0 ON fVilUAtlOH Of liMTEO H U M « * Of OCVKES - 4 8 V to + 5 V O u tp u t S w itc h in g D C -D C C o n v e rte r The MAX650 features user-controllable operating fre quency and a separate low voltage detector with adjust	OCR Scan	PDF	MAX650 250mA 230mA MAX650ACPO
MGB81DH Abstract: MOB81DH MOB81DRH MSB81DH MUB81DH MYB81DH Text: CRO DESCRIPTION This series lamps are low current high efficiency LED, encapsulated in a 2.37mm x 4.9mm round rectangular bars package with 1 inch lead. MGB81DH is a green LED with green diffused lens. MOB81DH is a orange LED with orange diffused lens. MOB81DRH is a high efficiency red LED with red diffused lens.	OCR Scan	PDF	MOB81DRH MSB81DH MUB81DH MYB81DH MGB81DH MOB81DH MYB81DH
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product SDecification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface	OCR Scan	PDF	BUK562-100A SQT404
2N3798 Abstract: 2N3799 Text: Datasheet ^ ^ ^^ ^ _ ^^ • tm 2N3798 2N3799 WSem G iconductor I I I i II 1 Corp. PNP SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE M anufacturers of W orld C lass Discrete S em iconductors	OCR Scan	PDF	2N3798 2N3799 2N3798, 2N3799 500jtiA 500jtiA, 30MHz 100MHz 100kHz 2N3798
toco Abstract: KSD227 Text: SAMSUNG SEMICONDUCTOR INC 1ME KSD227 \| T'lfc.MlMa □ OOb'IflO 2 \| NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to K8M42 • Collector Dissipation Pc-400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit	OCR Scan	PDF	KSD227 K8M42 400mW lc-100fiA, lo-10mA, toco
pt331c Abstract: PT331 Phototransistors PT202C Text: 24 D EVERLIGHT ELE CTRONICS 341S7G3 □□□□□□? 5 PHOTOTRANSISTORS • PHOTOTRANSISTORS MODEL: PT202C /PT331C ■ GENERAL DESCRIPTION T h e P T 2 0 2 C a n d P T 3 3 1 C are S ilicon Nitride P a ssiv a te d N P N planar Phototransistors with exceptionally stable characteristics a n d high illumination sensitivity. T h e c a s e s of	OCR Scan	PDF	G0GG007 PT202C/PT331C PT202C andPT331C PT331C PT202C 20mW/cm 20mWi PT331 Phototransistors