100IT Search Results

CEM8958

Contextual Info: mu CEM8958 PRELIMINARY Dual Enhancement Mode Field Effect Transistor^ and P Channel FEATURES • 3 0 V , 5 .3 A , Rds on)=35iti Q @Vgs=10V. Di R ds(on)=50iti Q @Vgs=4.5V. Di D2 D2 -30V, -4.0A , RDS(ON)=65m Q @Vgs=-10V. R ds(on)=100iti Q @Vgs=-4.5V. • Super high dense cell design for extremely low R d s (o n >.

Contextual Info: SANKEN ELEC TR IC CO LTD S5E T> 7110741 0000103 151 H S A K J Silicon NPN Triple Diffused Planar ☆High Speed Switching Transistor 2SC4140 Application Exampt« : • Outline Drawing 2 - - MT-100IT03P Switching Regulator and General Purpose Electrical Characteristics

MN6147

Abstract: mn1400 MN6147 c L-13 MN6049
Contextual Info: MICROCOMPUTER and PERIPHERAL L S I’s P eriph eral L S I's E le c t r ic a l C h a r a c te ris tic s Fu nctio n T y p e No. CM O S F req u en cy M N6049 S y n th e s iz e r for TV T a = 2 5 "C PLL M N 6 14 2 Fre q u e n cy S y n th e s iz e r for FM /A M

pin diagram of LM385

Abstract: 11235-14 LM385-1.2V LMC6022 LMC6024 LMC6024IM LMC6024IN M14A N14A WJ M14a
Contextual Info: N a t i o n a l LMC6024 9 S e m i c o n d u c t o r LMC6024 Low Power CMOS Quad Operational Amplifier General Description The LMC6024 is a CMOS quad operational amplifier which can operate from either a single supply or dual supplies. Its performance features include an input common-mode range

FMM-1718

Abstract: FMMT720 FMM1717 1DA SOT23 FMMT617 FMMT618 FMMT619 FMMT717 FMMT718 FMMT722
Contextual Info: E-1 I H ‘“”’’’”T’’’’” I I THERMAL CHARACTERISTICS AND DERATING INFORMATION .60 -40 -20 ?0 40 60 AMBIENT TEMPERATURE DEG DERATING 00 >00 120 140 160 CELSIUS CURVE 200 : l.1 150 s z < !7J 100 m s 2 z $ !- 50 O.lms 1ms 1Oms PuLSE MAXIMUM

Contextual Info: n r THIS DRAWING 7 IS U N P U B L IS H E D . C O P Y R IG H T 2 3 4 RELEASED BY 19 AMP IN COR PO RA TE D. FOR PUBLICATION ALL R IG H T S 1 ,19 DI ST LOC R ES E R V E D . AD REVISIONS 39 P L TR 4 . 88 [ . 132] D DESCRIPTION DATE DWN APVD u REV PER 0G21- 0 0 6 2 - 9 8

Contextual Info: INTRODUCTORY S « C lf o n o « l* S £ 0 ON fVilUAtlOH Of liMTEO H U M « * Of OCVKES - 4 8 V to + 5 V O u tp u t S w itc h in g D C -D C C o n v e rte r The MAX650 features user-controllable operating fre­ quency and a separate low voltage detector with adjust­

BUK481-100A

Contextual Info: N AMER PHILIPS/DISCRETE b'ìE D • 1^53^31 003D721 'ìlO M A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope suitable for surface mount applications.

Contextual Info: fS Ì H A R R HC5523 I S S E M I C O N D U C T O R Subscriber Line Interface Circuit August 1996 Features • Description Dl Monolithic High Voltage Process • Programmable Current Feed 20mA to 60mA • Programmable Loop Current Detector Threshold and Battery Feed Characteristics

1F42

Abstract: 270646 272324 80296SA A3155 a4313 S80296 240952 272326 8XC196KR
Contextual Info: 27280301.qxd 7/31/96 12:12 PM Page 1 80296SA Microcontroller User’s Manual We Value Your Opinion Dear Intel Customer: Your feedback will help us provide the information you need to design systems incorporating the 80296SA microcontroller. Your responses will guide us in developing other manuals and new versions of this one.

MGB81DH

Abstract: MOB81DH MOB81DRH MSB81DH MUB81DH MYB81DH
Contextual Info: CRO DESCRIPTION This series lamps are low current high efficiency LED, encapsulated in a 2.37mm x 4.9mm round rectangular bars package with 1 inch lead. MGB81DH is a green LED with green diffused lens. MOB81DH is a orange LED with orange diffused lens. MOB81DRH is a high efficiency red LED with red diffused lens.

UTM ceramic RESISTOR 212-3

Abstract: AD2033 rs 380sh NyQuist 3 axis DAX 3S OP27GN IC BD 540 LYS HTC Desire 816 Dual SIM HTC A5 12SmV cmos cookbook Monsanto 7 segment displays
Contextual Info: General Information ANALOG DEVICES DATA-ACQUISITION DATABOOK 1984 VOLUME I INTEGRATED CIRCUITS Table of Contents Ordering Guide Q Operational Amplifiers Instrumentation & Isolation Amplifiers c Analog Signal Processing Components m a Voltage References Temperature Measurement Components

Contextual Info: 2_ _ |_ 1 REVISIONS IN i dooumwd k fw propariy of Amphoocl G oondtoon W K k oot to to d k _ mm k tom raH M «M m t to prtar comart, toot m right k granted to d to uoo kfonwoMm k tok docunw t_

AC toroidal choke

Abstract: toroidal choke mf toroidal inductors ITL501 toroidal choke ITL100 choke coil inductor Electronic choke FERRITE TOROIDAL CORE DATA DC solenoid coils
Contextual Info: MSB Series Shielded Inductors ITL Series Toroidal Inductors ITS Series Small Toroidal Inductors .75" MAX. HFT Series Toroidal Inductors .75" MIN. TBM PCB Mount Toroids 2.35" MAX. 200 Series Choke Coils FB Series Wide - Band Chokes MF Series High Q Coils Wilco

Contextual Info: Philips Semiconductors Product SDecification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface

Contextual Info: SILICON N CHANNEL JUNCTION TYPE 2SK881 FM T UNER APPLICATIONS. U n i t i n mm VHF BAND A M PLIFIER APPLICATIONS. . Low Noise Figure 2.1 ± 0.1 : N F = 2 .5 d B T y p . 1.25 ± 0.1 (f=100MHz) 3 . Hi gh Forw ar d T r a n s f e r Admittance: | Yfs | = 9mS(Typ.)

DAC8043AIFS

Abstract: DAC ic 0800 pin diagram 136 8PIN DAC8043A
Contextual Info: ANALOG DEVICES 12-Bit, Serial-Input Multiplying DAC DAC8043A Preliminary FUNCTIONAL DIAGRAM FEATURES Compact SO-8 & TSSOP-8 Package 12-Bit Accurate +5V Operation @ <10uA Fast 3-Wire Serial Input Fast 1 |is Settling Time >1MHz 4-Quadrant Multiply BW Pin-for-Pin Upgrade for DAC8043

NE572N

Abstract: NE572 limiter ne572 NE572D SA572 SA572D SA572F SA572N rectifier schematic BRIGADE RECTIFIER
Contextual Info: NE/SA572 Programmable Analog Compandor Product Specification DESCRIPTION The NE572 is a dual-channel, high-per­ formance gain control circuit in which either channel may be used for dynamic range compression or expansion. Each channel has a full-wave rectifier to de­

Contextual Info: BSS66 BSS67 SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS PARTMARKING DETAILS BSS66 - M6 BSS67 - M7 BSS66R- M8 BSS67R - M9 ABSOLUTE MAXIMUM RATINGS VALUE UNIT V CBO 60 V V CEO 40 V V ebo !cm 6 V 200 mA Continuous Collector Current !c 100 mA Base Current

Contextual Info: > M > J X iy k i High-Speed, Low-Distortion, Differential Line Receivers The MAX4144/MAX4145/MAX4146 differential line receivers offer unparalleled high-speed, low-distortion performance. Using a three op-amp instrumentation amplifier architecture, these ICs have fully symmetrical

Contextual Info: MA CR ONI X INC 53E D • 00DD3SS GT1 ■ nACX P R IU R IIN A R V l ¥ l J k . , M X23C21OO MACRONIX. INC. B M -B rT X e B B K x B / ie S K x 1 B C M O S M A S K R O M FEATURES Completely TTL compatible Operating current: 60mA Standby current: 10O^A Package

567 tone

Abstract: 567 tone detector sd 7402 KIA 567 Decoder ci 567 567 decoder 10K1 567 tone decoder 250nF
Contextual Info: Philips Semiconductors Military Linear Products Product specification Tone decoder/phase-locked loop 567 FEATURES APPLICATIONS • W ide freq uency range • Touch Tone decoding 0.01 Hz to 500kH z self-biased input. T he bandw idth center • C a rrier-curren t rem ote controls

2N3798

Abstract: 2N3799
Contextual Info: Datasheet ^ ^ ^^ ^ _ ^^ • tm 2N3798 2N3799 WSem G iconductor I I I i II 1 Corp. PNP SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE M anufacturers of W orld C lass Discrete S em iconductors

toco

Abstract: KSD227
Contextual Info: SAMSUNG SEMICONDUCTOR INC 1ME KSD227 | T'lfc.MlMa □ OOb'IflO 2 | NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to K8M42 • Collector Dissipation Pc-400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit