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    SEMIKRON SKM 100 GB 063D

    Igbt Module, 600V, 130A, Semitrans 2; Continuous Collector Current:130A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SKM 100 GB 063D
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    Newark SKM 100 GB 063D Bulk 8
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    SEMIKRON SKM100GB063D

    POWER IGBT TRANSISTOR
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    Richardson RFPD SKM100GB063D 1
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    100GB063D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SKM 100GB063D 7% U OV WH+ / * 00 ,3&)4?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 7X U OV WH :H 7X U MVN WH :H]^ ZNN G M[N L 7%'0) U ¥N WH MNN L ONN L ` ON G MN d0 7%'0) U OV WH MNN L 7%'0) U eN WH ¥V L ONN L ¥ON L ONN L 8 fN EEE g MVN


    Original     		PDF 100GB063D

    Untitled

    Abstract: No abstract text available
    Text: SKM 100GB063D  6 07 8       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 6 07 8) ) 9 6 .7/ 8) )>? ;// ( .</ -  6 =/ 8) .// - 0// - A 0/ ( ./ E  6 07 8) .// -  6 F/ 8) =7 - 0// - =0/ - 0// -  G/ &&& H .7/ 8)


    Original     		PDF 100GB063D

    Untitled

    Abstract: No abstract text available
    Text: SKM 100GB063D Absolute Maximum Ratings Symbol Conditions IGBT ' ) )=> (' ,@  ( SEMITRANSTM 2 Superfast NPT-IGBT Module SKM 100GB063D Features                               


    Original     		PDF 100GB063D

    skm100gb063d

    Abstract: No abstract text available
    Text: SKM 100GB063D  6 07 8       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 6 07 8) ) 9 6 .7/ 8) )>? ;// ( .</ -  6 =/ 8) .// - 0// - A 0/ ( ./ E  6 07 8) .// -  6 F/ 8) =7 - 0// - =0/ - 0// -  G/ &&& H .7/ 8)


    Original     		PDF 100GB063D skm100gb063d

    Untitled

    Abstract: No abstract text available
    Text: SKM 100GB063D  6 07 8       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 6 07 8) ) 9 6 .7/ 8) )>? ;// ( .</ -  6 =/ 8) .// - 0// - A 0/ ( ./ E  6 07 8) .// -  6 F/ 8) =7 - 0// - =0/ - 0// -  G/ &&& H .7/ 8)


    Original     		PDF 100GB063D

    Diode semikron 3/17

    Abstract: Diode semikron 1/17
    Text: SKM 100GB063D Absolute Maximum Ratings Symbol Conditions IGBT ' ) )=> (' ,@  ( SEMITRANSTM 2 Superfast NPT-IGBT Module SKM 100GB063D Features                               


    Original     		PDF 100GB063D Diode semikron 3/17 Diode semikron 1/17

    Untitled

    Abstract: No abstract text available
    Text: SKM 100GB063D Absolute Maximum Ratings Symbol Conditions IGBT ' ) )=> (' ,@  ( SEMITRANSTM 2 Superfast NPT-IGBT Module SKM 100GB063D Features                               


    Original     		PDF 100GB063D

    skm100gb063d

    Abstract: No abstract text available
    Text: SKM 100GB063D  6 07 8       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 6 07 8) ) 9 6 .7/ 8) )>? ;// ( .</ -  6 =/ 8) .// - 0// - A 0/ ( ./ E  6 07 8) .// -  6 F/ 8) =7 - 0// - =0/ - 0// -  G/ &&& H .7/ 8)


    Original     		PDF 100GB063D skm100gb063d

    din 7985

    Abstract: SKM100GB063D SK 200 GAR 125 schaltung Mosfet wacker SKM181A3 if2t SKM151 SKM181
    Text: 5. SEMITRANS M Leistungs-MOSFET Module Besondere Merkmale Typische Anwendungen Leistungs-MOSFET Module • N-Kanal-Anreicherungstyp • Schaltnetzteile • Kurze innere Verbindungen verhindern • Selbstgeführte Wechselrichter • Gleichstrom-Servo- und Roboter-Antriebe


    Original     		PDF

    100GB06

    Abstract: M100GB SKM 100 GB 063 D
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Units RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 600 600 130 / 100


    Original     		PDF

    skm 200 gb 122 d

    Abstract: semikron skkt 132/ 14/ E Semitrans M SKD 100 GAL 124d Semikron SKR 26 /12 semikron skkh 161 semikron skkt 162/ 12/ D semipack skkt 161 sknh 210 semikron skt 240 SKKL131
    Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,


    Original     		PDF

    IEC 974-1

    Abstract: SKM 400GB062D 195GB124DN 200gb 400GB062D 200GB123D 2119 SKM400GB123D 300GB174D 145GB123D
    Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,


    Original     		PDF

    SKM 400GB062D

    Abstract: 62792 02634 SKM 400GD063D heatsink for skkt 72 semikron skt 140 IEC 974-1 Semitrans M SKD 100 GAL 124d 6822 semikron skkt 31
    Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,


    Original     		PDF 300GD063D 125GD127D 85GD127D 350GD063DM 250GD128D 350GD128DM 400GD063D 400GD128D 500GD128DM SKM 400GB062D 62792 02634 SKM 400GD063D heatsink for skkt 72 semikron skt 140 IEC 974-1 Semitrans M SKD 100 GAL 124d 6822 semikron skkt 31