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Kyocera AVX Components 100B4R3BW500XT1K CAP CER 4.3PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B4R3BW500XT1K	Digi-Reel	988		1	1 $8.98 10 $6.257 100 $4.8044 1000 $4.2134 10000 $4.2134	Buy Now
	100B4R3BW500XT1K	Cut Tape	988		1	1 $8.98 10 $6.257 100 $4.8044 1000 $4.2134 10000 $4.2134	Buy Now
	100B4R3BW500XT1K	Reel			1,000	1 - 10 - 100 - 1000 $4.45037 10000 $4.28526	Buy Now
Mouser Electronics	100B4R3BW500XT1K					1 $6.68 10 $5.1 100 $3.87 1000 $3.3 10000 $3.24	Get Quote
Richardson RFPD	100B4R3BW500XT1K				1,000	1 - 10 - 100 - 1000 $2.54 10000 $2.38	Buy Now
Kyocera AVX Components 100B4R3CTN1500XC100 MLC A/B/R - Waffle Pack (Alt: 100B4R3CTN1500XC10)
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Avnet Americas	100B4R3CTN1500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B4R3CTN1500XC100					1 $5.93 10 $5.1 100 $3.81 1000 $3.08 10000 $3.02	Get Quote
Richardson RFPD	100B4R3CTN1500XC100				200	1 - 10 - 100 - 1000 $2.64 10000 $2.36	Buy Now
Kyocera AVX Components 100B4R3CP500XC100 MLC A/B/R - Waffle Pack (Alt: 100B4R3CP500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B4R3CP500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B4R3CP500XC100					1 $5.93 10 $5.1 100 $3.81 1000 $3.08 10000 $3.02	Get Quote
Richardson RFPD	100B4R3CP500XC100		5		200	1 - 10 - 100 - 1000 $2.64 10000 $2.36	Buy Now
Kyocera AVX Components 100B4R3DT500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B4R3DT500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B4R3DT500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B4R3BW1500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B4R3BW1500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B4R3BW1500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	100B4R3BW1500XT	Bulk			500	1 - 10 - 100 - 1000 $5.77 10000 $5.77	Buy Now

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100B4R3 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B4R3BW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 4.3PF 500V P90 1111		Original	PDF
100B4R3BW500XT1K		American Technical Ceramics	Ceramic Capacitor 4.3PF 500V P90 1111		Original	PDF

100B4R3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S19100LR3 and MRF5S19100LSR3 replaced by MRF5S19100HR3 and MRF5S19100HSR3. H suffix indicates lower thermal resistance package. The RF MOSFET Line	Original	PDF	MRF5S19100L/D MRF5S19100LR3 MRF5S19100LSR3 MRF5S19100HR3 MRF5S19100HSR3. MRF5S19100LR3 MRF5S19100LSR3
Untitled Abstract: No abstract text available Text: MRF5S19090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF5S19090H MRF5S19090HR3 MRF5S19090HSR3
FERRITE BEAD 1000 OHM 0805 Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100 Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	PDF	MW6S010N MW6S010NR1 MW6S010GNR1 FERRITE BEAD 1000 OHM 0805 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF5S19100HR3 MRF5S19100HSR3
KME63VB471M12x25LL Abstract: transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 MRF5S9150HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.	Original	PDF	MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150HR3 KME63VB471M12x25LL transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HSR3
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PDF	PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1
AN1955 Abstract: MRF5S19100HR3 MRF5S19100HSR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19100HSR3	Original	PDF	MRF5S19100H/D MRF5S19100HR3 MRF5S19100HSR3 MRF5S19100HR3 AN1955 MRF5S19100HSR3
CDR33BX104AKWS Abstract: MRF5S19100LR3 MRF5S19100LSR3 Text: MOTOROLA Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19100LR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to	Original	PDF	MRF5S19100L/D MRF5S19100LR3 MRF5S19100LR3 MRF5S19100LSR3 CDR33BX104AKWS MRF5S19100LSR3
MW6S010NR1 Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1 Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	PDF	MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
k 2645 MOSFET Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
KME63VB Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 0, 10/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	PDF	MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160H KME63VB
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19090L/D SEMICONDUCTOR TECHNICAL DATA MRF5S19090LR3 and MRF5S19090LSR3 replaced by MRF5S19090HR3 and MRF5S19090HSR3. H suffix indicates lower thermal resistance package. MRF5S19090LR3 RF Power Field Effect Transistors MRF5S19090LSR3	Original	PDF	MRF5S19090L/D MRF5S19090LR3 MRF5S19090LSR3 MRF5S19090HR3 MRF5S19090HSR3. MRF5S19090LR3 MRF5S19090LSR3
MRF5S9150HSR3 Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869	Original	PDF	MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150HR3 MRF5S9150HSR3 A114 A115 AN1955 C101 JESD22
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF5S19090HR3 MRF5S19090HSR3

AN1955 Abstract: MRF5S19100H MRF5S19100HR3 MRF5S19100HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF5S19100H MRF5S19100HR3 MRF5S19100HSR3 AN1955 MRF5S19100H MRF5S19100HSR3
PTF082001E Abstract: atc 1725 LM7805 smd smd transistor infineon 106T BCP56 PTF082001F 106T capacitor Text: PTF082001E PTF082001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 860 – 900 MHz Description The PTF082001E and PTF082001F are 200-watt, internally-matched GOLDMOS FETs intended for CDMA and CDMA 2000 applications in the 860 to 900 MHz band. Thermally-enhanced packaging provides the coolest	Original	PDF	PTF082001E PTF082001F PTF082001E PTF082001F 200-watt, PTF082001F* IS-95 17erous atc 1725 LM7805 smd smd transistor infineon 106T BCP56 106T capacitor
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF5S19100H MRF5S19100HR3 MRF5S19100HSR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 0, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869	Original	PDF	MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150H
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	PDF	MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160H
nippon capacitors Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9210 Rev. 3, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	PDF	MRF9210 MRF9210R3 MRF9210 nippon capacitors
FERRITE BEAD 1000 OHM 0805 Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 2, 5/2006 Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1	Original	PDF	MW6S010 MW6S010NR1/GNR1. MW6S010MR1 MW6S010GMR1 MW6S010MR1 FERRITE BEAD 1000 OHM 0805 MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
AN1955 Abstract: MRF5S19090H MRF5S19090HR3 MRF5S19090HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF5S19090H Rev. 2, 5/2006 RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF5S19090H IS--95 MRF5S19090HR3 MRF5S19090HSR3 AN1955 MRF5S19090H MRF5S19090HSR3
100B270JP500X Abstract: NIPPON CAPACITORS MRF9210 DS0978 TRANSISTOR J408 865 marking amplifier Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	PDF	MRF9210R3 100B270JP500X NIPPON CAPACITORS MRF9210 DS0978 TRANSISTOR J408 865 marking amplifier
A114 Abstract: A115 AN1955 C101 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	PDF	MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160HR3 A114 A115 AN1955 C101 JESD22 MRF6S9160H MRF6S9160HSR3

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100B4R3 Price and Stock

Kyocera AVX Components 100B4R3BW500XT1K

Kyocera AVX Components 100B4R3CTN1500XC100

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Kyocera AVX Components 100B4R3DT500XT

Kyocera AVX Components 100B4R3BW1500XT

100B4R3 Datasheets (2)

100B4R3 Datasheets Context Search

Untitled

Untitled

FERRITE BEAD 1000 OHM 0805

Untitled

KME63VB471M12x25LL

LM7805ACH-ND

AN1955

CDR33BX104AKWS

MW6S010NR1

k 2645 MOSFET

KME63VB

Untitled

MRF5S9150HSR3

Untitled

AN1955

PTF082001E

Untitled

Untitled

Untitled

nippon capacitors

FERRITE BEAD 1000 OHM 0805

AN1955

100B270JP500X

A114