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Kyocera AVX Components 100B150JP500XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100B150JP500XTV)
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Avnet Americas	100B150JP500XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B150JP500XTV					1 - 10 - 100 - 1000 $4.32 10000 $4.32	Get Quote
Kyocera AVX Components 100B150JP500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B150JP500XT)
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Avnet Americas	100B150JP500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B150JP500XT					1 - 10 - 100 - 1000 $3.56 10000 $3.56	Get Quote
Kyocera AVX Components 100B150JP500XC100 MLC A/B/R - Waffle Pack (Alt: 100B150JP500XC100)
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Avnet Americas	100B150JP500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B150JP500XC100					1 $6.22 10 $5.39 100 $4.09 1000 $4.09 10000 $4.09	Get Quote
TTI	100B150JP500XC100	WAFL			100	1 - 10 - 100 $4.05 1000 $4.05 10000 $4.05	Buy Now
Richardson RFPD	100B150JP500XC100		15		100	1 - 10 - 100 $3.35 1000 $3.04 10000 $2.69	Buy Now
Kyocera AVX Components 100B150JP500XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B150JP500XT1K)
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Avnet Americas	100B150JP500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B150JP500XT1K					1 - 10 - 100 - 1000 $3.27 10000 $3.27	Get Quote

100B150JP500X Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF6S9045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 MRF6S9045MR1	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF6S9060 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF6S9060 MRF6S9060NR1/NBR1. MRF6S9060MR1 MRF6S9060MBR1 MRF6S9060MR1	PDF
A113 Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRF5S9070NR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR	PDF
MRF6S9045MR1 Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045 Rev. 2, 5/2006 Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1	PDF
KME63VB471M12x25LL Abstract: transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 MRF5S9150HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.	Original	MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150HR3 KME63VB471M12x25LL transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HSR3	PDF
UHF TRANSISTOR Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V	Original	HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet	PDF
Untitled Abstract: No abstract text available Text: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE	Original		PDF
uhf 150w mosfet Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346 Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	HVV0912-150 121eliable. EG-01-DS11A or429-HVVi uhf 150w mosfet 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with	Original	MRF5S9070NR1 MRF5S9070MR1 MRF5S9070NR1	PDF
KME63VB Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 0, 10/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160H KME63VB	PDF
HVV1214-140 Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain	Original	HVV1214-140 429-HVVi EG-01-PO22X1 HVV1214-140 L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB	PDF
mode 5 IFF Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00 Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	HVV1011-300 429-HVVi EG-01-DS02B EG-01-DS02B8 mode 5 IFF Coaxicom RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00	PDF
AN1955 Abstract: MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this	Original	MRF5S9070NR1/D MRF5S9070NR1 AN1955 MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR	PDF
MRF5S9150HSR3 Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869	Original	MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150HR3 MRF5S9150HSR3 A114 A115 AN1955 C101 JESD22	PDF

A113 Abstract: A114 A115 AN1955 C101 JESD22 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 J-044 Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRF6S9045N MRF6S9045NR1 MRF6S9045NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9045N MRF6S9045NBR1 J-044	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 0, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869	Original	MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150H	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160H	PDF
MRF5S9070NR1 Abstract: marking us capacitor pf l1 A113 A114 A115 AN1955 C101 JESD22 crcw12065603f100 MRF5S9070MR1 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070MR1 Rev. 5, 5/2006 Replaced by MRF5S9070NR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S9070MR1 MRF5S9070NR1. MRF5S9070NR1 marking us capacitor pf l1 A113 A114 A115 AN1955 C101 JESD22 crcw12065603f100 MRF5S9070MR1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this	Original	MRF5S9070NR1/D MRF5S9070NR1	PDF
MRF5S9070N Abstract: 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRF5S9070NR1 MRF5S9070MR1 MRF5S9070N 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR	PDF
A113 Abstract: A114 A115 AN1955 C101 JESD22 MRF6S9060N MRF6S9060NBR1 MRF6S9060NR1 Lateral Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRF6S9060N MRF6S9060NR1 MRF6S9060NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9060N MRF6S9060NBR1 Lateral	PDF
GROUND BASED RADAR Abstract: transistor SMD R1D Text: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications	Original	HVV1214-140 21DD1E) GROUND BASED RADAR transistor SMD R1D	PDF
A114 Abstract: A115 AN1955 C101 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160HR3 A114 A115 AN1955 C101 JESD22 MRF6S9160H MRF6S9160HSR3	PDF
A113 Abstract: A114 A115 C101 JESD22 MRF6S9060 MRF6S9060MBR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060 Rev. 1, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRF6S9060 MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 A113 A114 A115 C101 JESD22 MRF6S9060 MRF6S9060MBR1	PDF

100B150JP500X Search Results

100B150JP500X Price and Stock

Kyocera AVX Components 100B150JP500XTV

Kyocera AVX Components 100B150JP500XT

Kyocera AVX Components 100B150JP500XC100

Kyocera AVX Components 100B150JP500XT1K

100B150JP500X Datasheets Context Search

Untitled

Untitled

A113

MRF6S9045MR1

KME63VB471M12x25LL

UHF TRANSISTOR

Untitled

uhf 150w mosfet

Untitled

KME63VB

HVV1214-140

mode 5 IFF

AN1955

MRF5S9150HSR3

A113

Untitled

Untitled

MRF5S9070NR1

Untitled

MRF5S9070N

A113

GROUND BASED RADAR

A114

A113