100AVS Search Results

Contextual Info: •I 43 02 27 1 0 Q S 3 7 b l 35fl ■ HAS 2N6788 Jg HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T0-205A F BOTTOM VIEW • 6.0 A , 1 0 0V • rD S on = 0 - 3 0 n • S O A is P o w er-D issip atio n Lim ited

me12n06el

Abstract: Nihon Inter Electronics me12n06
Contextual Info: CATALOG No NIEC-009 SINCE 1957 N IE C Industry Leader Power Semiconductor ME12N06EL ME12N06EL-F Power MOSFET Logic Level N-Channel Logic Level 12 Amperes 60 Volts RDS on = 0.18 Ohms FEATURES: • Fast Sw itching • Low D rive R equirem ents to Interface

IRL621

Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRL620/IRL621 FEATURES • • • • • • • • Lower Rds ON Excellent voltage stability Fast switching speeds Rugged polyslllcon gate cell structure Lower Input capacitance Extended safe operating area Improved high temperature reliability

IRL540

Abstract: IRL541
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFETS IRL540/541 FEATURES • • • • • • • Lower R d s i o n Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: j p j -0 p p Q I j Q p Q I Provisional Data Sheet No. PD-9.432B I O R Rectifier JANTX2N6800 HEXFET POWER MOSFET JANTXV2N6800 [REF:MIL-PRF-19500/557] [GENERIC:IRFF330] N-CHANNEL 400 Volt, 1.0Q HEXFET Product Summan1 Part Number BV dss HEXFET technology is the key to International