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    l00a

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o lo g y A P T 10050JVR 1000V 19A 0.500ÌÌ POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF 10050JVR OT-227 APT1005QJVR OT-227 l00a

    IRFZ22 mosfet

    Abstract: IRF 850 mosfet 1RFZ22 1rfz20 IRFZ22 all transistor IRF 312 9434B C424 IRF 426 transistor c421
    Text: H E D | 4 Ô 5 5 M 52 □□0âb?2 Û | Data Sheet No. PD-9.434B INTERNATIGNAL R E C T IFIE R IN T E R N A T IO N A L . IO R R E C T IF IE R T -3 9 -1 1 H E X F E T T R A N S IS T O R S IR F Z S S IM-Channel 5 0 Volt Power MOSFETs 50 Volt, 0.1 Ohm HEXFET


    OCR Scan     		PDF t-39-11 T0-220AB C-426 IRFZ22 mosfet IRF 850 mosfet 1RFZ22 1rfz20 IRFZ22 all transistor IRF 312 9434B C424 IRF 426 transistor c421

    buz21

    Abstract: BUZ21 L
    Text: Æ 7 SCS TH O M SO N BUZ21 RiöD g^ i[L[i(g RQB S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss BUZ21 100 V ^DS(on 0.1 Ü 19 A • 100 VOLTS - FOR DC/DC CONVERTERS • HIGH CURRENT • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦


    OCR Scan     		PDF BUZ21 O-220 100Alps buz21 BUZ21 L