1008 TRANSISTOR Search Results

1008 transistor

Contextual Info: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the

Contextual Info: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the

S7960-1008

Abstract: S7961-1008
Contextual Info: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the

Contextual Info: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the

PM1008GP

Abstract: 1006G PM1008AZ C 1008 y transistor pm1008aj PM1008GS PM1008GJ
Contextual Info: PMfl PM-1008 LOW-POWER, PRECISION EXTERNALLY-COMPENSATED OPERATIONAL AMPLIFIER 1 M o n o i t h ic s 1 <^ FEATURES is greatly improved. Exceptionally low bias currents of only ±80pA, typical, over the full military temperature range combine with low noise of only 17nV/\/Hz at 10Hz. The PM-1008&#39;s low

BUZ45

Abstract: BUZ 840
Contextual Info: SIEMENS SIPMOS Power MOS Transistors BUZ 45 BUZ 45 A BUZ 45 B VDS rn 500 V lD = 8 . 3 . . . 10 A ^DS on = 0-5 . . . 0.8 Q • N channel • Enhancem ent mode • Package: T O -2 04 A A (T O -3 )1) Type Ordering code BUZ 45 C 6 7078-A 1008-A 2 BUZ 45 A C 67078-A 1008-A 3

C 1008 y transistor

Abstract: 1008 transistor transistor 1008 sC1008
Contextual Info: K SC 1008 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSA708 • High Collector-Base Voltage V cbo=80V • Collector Current lc=700mA • Collector Dissipation Pc“800mW ABSOLUTE MAXIMUM RATINGS TA=25*C

Contextual Info: T O S H IB A RN1007~RN1009 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1007, RN 1008, RN1009 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • . 5.1 MAX. With Built-in Bias Resistors

OB5013

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA708 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO -92 • C om plem ent to KSC 1008 • Col lector-Base Voltage: VCbo= -80V • C ollector D issipation: Pc=8 0 0m W ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic

662k transistor

Abstract: transistor 662k kd 506 transistor 662K SOT-23 HBCS-1100 nal22 74LS75D LM2907 Aspheric Lens NAR2
Contextual Info: Optical Sensing for the HBCS-1100 Application Note 1008 Introduction The rapid growth of the digital processing used in commercial, industrial and consumer products, has created the need for sensors that convert physical parameters into electrical signals which may directly

Contextual Info: KSR2008 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In T O -92 • Sw itching circuit, Inverter, Interface circuit, Driver C ircuit • B uilt in bias R esistor ^ = 4 7 X 1 2 , R2=22Ki2) • C om plem ent to KSR 1008 ABSOLUTE MAXIMUM RATINGS (T a=25°C)

Contextual Info: 1582-1008 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: New 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm 0.020 ± 0.010 3 2 0.80 ± 0.05 4 1 0.60 ± 0.05 1.00 ± 0.05 ■ Features 1 ● Assembly process that does not use lead frame. ● Lead Pb -free design and significant reduction in discarded plastics for

KY 500 ATX

Abstract: rc144dpg rockwell l39
Contextual Info: RC144ACG Modem Designer’s Guide Preliminary Rockwell International Digital Communications Division 1993 Rockwell International All Rights Reserved Printed in U.S.A. Order No.1008 December 10,1993 RC144ACG Modem Designer’s Guide NOTICE Information furnished by Rockwell International Corporation is believed to be accurate and reliable. However, no responsibility

pmi pm1008

Abstract: PM1008GZ
Contextual Info: PM-1008 PMI LOW-POWER, PRECISION EXTERNALLY-COMPENSATED OPERATIONAL AMPLIFIER P r e c i s i o n M o n o l i t h i c * Inc. FEATURES is greatly improved. Exceptionally low bias currents of only ±80pA, typical, over the full military temperature range combine

C 1008 y transistor

Abstract: 2sb1008
Contextual Info: 2SB1008 h ~7 > y 7 . $ /Transistors 2SB 1008 Epitaxial Planar PNP Silicon Transistor Darlington & JS '$S ^*tM iffl/Low Freq. Power Amp. • • 1) $ * } R - + ;£ l2 / D i m e n s i o n s ( U n i t : m m ) h > « « E T '* h F E ? * 5 o 7 .810.2 2 )B E (S llC |it)4kQ (73ffifiiirtlio S / f $

Contextual Info: R aM T R O N \ FM 1008/1108/1208/1308/1408 FRAM 1,024-16,384-Bit Nonvolatile Static RAM Family c o f^ p o ira rio M Product Preview F e a tu re s • Nonvolatile CMOS Static RAM with > 10 Year Data Retention Without Power • Endurance Rated at >1010 Read/Write Cycles

1008 transistor

Contextual Info: Panasonic 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm These series are transistors and Diodes that are housed in ultra small 4-pin |Q .0 2 0 t0 .0 1 P molded lead-less package of 1.0 mmx0.8 mmx0.6 mm. The PCB mounting area is l/10th of that of conventional Panasonic Mini 3pin packages and high-density integration is possible. And they are designed

2SB1008

Contextual Info: Is ~ 7 > V $ /T ra n sisto rs 2SB 1008 2SB1008 PNP h> i5;Ji>jSW^]iill iffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • • 1 # - ' ) > W f ^ j i l S l / D i m e n s i o n s U n it : m m ) h > t ^ T - h FET'Æ >5o 2)BEfôlCjfô4kQCD$ÊÎ)t£F*3j&o >Sjf$

FM1108

Abstract: 512X8 from 128x8 ram FM1208
Contextual Info: R AMT RON CORP 2 QE RaM IRO N X c 0 « \ P 0 R a T i0 N D • 7SSSQ1S Q00DDti3 7 ■ FM 1008/1108/1208/1408 FRAM : . . . . 1,024-Bit to 16,384-Bit N onvolatile S tatic RAM Fam ily Product Preview _T - ¥ A - 2 3 - ! Z Features • True Nonvolatile CMOS Static RAM with > 10 Year Data

120PV

Abstract: PM1008GP PM-1006 pm1008
Contextual Info: PM-1008 pm D LOW-POWER, PRECISION EXTERNALLY-COMPENSATED OPERATIONAL AMPLIFIER I’ r t 'i i s i o n M o n o lith ic s I FEATURES is greatly im proved. E xceptio nally low bias currents o f o n ly ±8 0pA , typical, o ve rth e full m ilitary tem perature range com bine

Contextual Info: IMAGE SENSOR m CCD area image sensor , m w m - :• S7960/S7961 -1008 Back-thinned FFT-CCDs for high-speed application S 7 9 6 0 /S 7 9 6 1 -10 0 8 a re F F T -C C D im a g e se n so rs s p e c ific a lly d e s ig n e d fo r high sp e e d o p e ra tio n . By e m p lo y in g a w id e band w id th o n -c h ip

Contextual Info: V e r s io n 2 . 0 , 2 0 M a r 2 0 1 3 CoolSET -F3R80 I C E3 AR 1008 0JZ -T O f f -Lin e S MP S Cur ren t M od e Co n tr olle r wit h in t eg ra te d 8 00 V Co o lMO S ® a n d S ta rt up c ell b ro wn ou t & fr eq ue n c y jit t er in DI P -7 P o w e r M a n a ge m e n t & S u p p ly

utc 1018

Abstract: transistor 1008 1008 transistor MJE2955T hFE-20 a 102 transistor
Contextual Info: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified