1008 transistor
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the
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S7960/S7961-1008
S7960/S7961-1008
SE-171
KMPD1034E08
1008 transistor
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the
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S7960/S7961-1008
S7960/S7961-1008
SE-171
KMPD1034E06
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S7960-1008
Abstract: S7961-1008
Text: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the
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S7960/S7961-1008
S7960/S7961-1008
SE-171
KMPD1034E07
S7960-1008
S7961-1008
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the
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S7960/S7961-1008
S7960/S7961-1008
SE-171
KMPD1034E06
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662k transistor
Abstract: transistor 662k kd 506 transistor 662K SOT-23 HBCS-1100 nal22 74LS75D LM2907 Aspheric Lens NAR2
Text: Optical Sensing for the HBCS-1100 Application Note 1008 Introduction The rapid growth of the digital processing used in commercial, industrial and consumer products, has created the need for sensors that convert physical parameters into electrical signals which may directly
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HBCS-1100
2-25pF
HBCS-1100
CA3130
LM124-1
1N914
1N914
LM124-3
662k transistor
transistor 662k
kd 506 transistor
662K SOT-23
nal22
74LS75D
LM2907
Aspheric Lens
NAR2
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Untitled
Abstract: No abstract text available
Text: 1582-1008 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Untitled
Abstract: No abstract text available
Text: New 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm 0.020 ± 0.010 3 2 0.80 ± 0.05 4 1 0.60 ± 0.05 1.00 ± 0.05 ■ Features 1 ● Assembly process that does not use lead frame. ● Lead Pb -free design and significant reduction in discarded plastics for
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1008-type
1/10th
2SB1462L
2SD2216L
UNRL110
UNRL210
MA4L111
MA4L728
MA4L784
E00081BE
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Untitled
Abstract: No abstract text available
Text: 1561-1008 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq800k
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Untitled
Abstract: No abstract text available
Text: V e r s io n 2 . 0 , 2 0 M a r 2 0 1 3 CoolSET -F3R80 I C E3 AR 1008 0JZ -T O f f -Lin e S MP S Cur ren t M od e Co n tr olle r wit h in t eg ra te d 8 00 V Co o lMO S ® a n d S ta rt up c ell b ro wn ou t & fr eq ue n c y jit t er in DI P -7 P o w e r M a n a ge m e n t & S u p p ly
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-F3R80
-F3R80
ICE3AR10080JZ-T
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utc 1018
Abstract: transistor 1008 1008 transistor MJE2955T hFE-20 a 102 transistor
Text: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified
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MJE2955T
MJE2955T
O-252
QW-R209-010
utc 1018
transistor 1008
1008 transistor
hFE-20
a 102 transistor
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PM1008GP
Abstract: 1006G PM1008AZ C 1008 y transistor pm1008aj PM1008GS PM1008GJ
Text: PMfl PM-1008 LOW-POWER, PRECISION EXTERNALLY-COMPENSATED OPERATIONAL AMPLIFIER 1 M o n o i t h ic s 1 <^ FEATURES is greatly improved. Exceptionally low bias currents of only ±80pA, typical, over the full military temperature range combine with low noise of only 17nV/\/Hz at 10Hz. The PM-1008's low
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PM-1008
120/iV
100pA
600pA
114dB
PM-1008
PM1008GP
1006G
PM1008AZ
C 1008 y transistor
pm1008aj
PM1008GS
PM1008GJ
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BUZ45
Abstract: BUZ 840
Text: SIEMENS SIPMOS Power MOS Transistors BUZ 45 BUZ 45 A BUZ 45 B VDS rn 500 V lD = 8 . 3 . . . 10 A ^DS on = 0-5 . . . 0.8 Q • N channel • Enhancem ent mode • Package: T O -2 04 A A (T O -3 )1) Type Ordering code BUZ 45 C 6 7078-A 1008-A 2 BUZ 45 A C 67078-A 1008-A 3
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078-A
008-A
7078-A
BUZ45
BUZ 840
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C 1008 y transistor
Abstract: 1008 transistor transistor 1008 sC1008
Text: K SC 1008 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSA708 • High Collector-Base Voltage V cbo=80V • Collector Current lc=700mA • Collector Dissipation Pc“800mW ABSOLUTE MAXIMUM RATINGS TA=25*C
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KSA708
700mA
800mW
500mA,
C 1008 y transistor
1008 transistor
transistor 1008
sC1008
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Untitled
Abstract: No abstract text available
Text: T O S H IB A RN1007~RN1009 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1007, RN 1008, RN1009 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • . 5.1 MAX. With Built-in Bias Resistors
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RN1007
RN1009
RN1007,
RN2007
RN1008
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Untitled
Abstract: No abstract text available
Text: KSR2008 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In T O -92 • Sw itching circuit, Inverter, Interface circuit, Driver C ircuit • B uilt in bias R esistor ^ = 4 7 X 1 2 , R2=22Ki2) • C om plem ent to KSR 1008 ABSOLUTE MAXIMUM RATINGS (T a=25°C)
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KSR2008
22Ki2)
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KY 500 ATX
Abstract: rc144dpg rockwell l39
Text: RC144ACG Modem Designer’s Guide Preliminary Rockwell International Digital Communications Division 1993 Rockwell International All Rights Reserved Printed in U.S.A. Order No.1008 December 10,1993 RC144ACG Modem Designer’s Guide NOTICE Information furnished by Rockwell International Corporation is believed to be accurate and reliable. However, no responsibility
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RC144ACG
KY 500 ATX
rc144dpg
rockwell l39
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pmi pm1008
Abstract: PM1008GZ
Text: PM-1008 PMI LOW-POWER, PRECISION EXTERNALLY-COMPENSATED OPERATIONAL AMPLIFIER P r e c i s i o n M o n o l i t h i c * Inc. FEATURES is greatly improved. Exceptionally low bias currents of only ±80pA, typical, over the full military temperature range combine
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PM-1008
120/iV
100pA
600pA
114dB
PM-1008
pmi pm1008
PM1008GZ
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C 1008 y transistor
Abstract: 2sb1008
Text: 2SB1008 h ~7 > y 7 . $ /Transistors 2SB 1008 Epitaxial Planar PNP Silicon Transistor Darlington & JS '$S ^*tM iffl/Low Freq. Power Amp. • • 1) $ * } R - + ;£ l2 / D i m e n s i o n s ( U n i t : m m ) h > « « E T '* h F E ? * 5 o 7 .810.2 2 )B E (S llC |it)4kQ (73ffifiiirtlio S / f $
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2SB1008
73ffifiiirtlio
111Emitter
C 1008 y transistor
2sb1008
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Untitled
Abstract: No abstract text available
Text: R aM T R O N \ FM 1008/1108/1208/1308/1408 FRAM 1,024-16,384-Bit Nonvolatile Static RAM Family c o f^ p o ira rio M Product Preview F e a tu re s • Nonvolatile CMOS Static RAM with > 10 Year Data Retention Without Power • Endurance Rated at >1010 Read/Write Cycles
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384-Bit
100ns
200ns
24-Pin
24-Pin)
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1008 transistor
Abstract: No abstract text available
Text: Panasonic 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm These series are transistors and Diodes that are housed in ultra small 4-pin |Q .0 2 0 t0 .0 1 P molded lead-less package of 1.0 mmx0.8 mmx0.6 mm. The PCB mounting area is l/10th of that of conventional Panasonic Mini 3pin packages and high-density integration is possible. And they are designed
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1008-type
l/10th
UNRL110
UNRL210
MA4L111
MA4L728
MA4L784
D00081BE
1008 transistor
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2SB1008
Abstract: No abstract text available
Text: Is ~ 7 > V $ /T ra n sisto rs 2SB 1008 2SB1008 PNP h> i5;Ji>jSW^]iill iffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • • 1 # - ' ) > W f ^ j i l S l / D i m e n s i o n s U n it : m m ) h > t ^ T - h FET'Æ >5o 2)BEfôlCjfô4kQCD$ÊÎ)t£F*3j&o >Sjf$
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2SB1008
O-126
600mA/-1
100mA
2SB1008
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FM1108
Abstract: 512X8 from 128x8 ram FM1208
Text: R AMT RON CORP 2 QE RaM IRO N X c 0 « \ P 0 R a T i0 N D • 7SSSQ1S Q00DDti3 7 ■ FM 1008/1108/1208/1408 FRAM : . . . . 1,024-Bit to 16,384-Bit N onvolatile S tatic RAM Fam ily Product Preview _T - ¥ A - 2 3 - ! Z Features • True Nonvolatile CMOS Static RAM with > 10 Year Data
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Q00DDti3
024-Bit
384-Bit
100ns
200ns
150mW
Compatible098
24-pin)
FM1108
512X8 from 128x8 ram
FM1208
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120PV
Abstract: PM1008GP PM-1006 pm1008
Text: PM-1008 pm D LOW-POWER, PRECISION EXTERNALLY-COMPENSATED OPERATIONAL AMPLIFIER I’ r t 'i i s i o n M o n o lith ic s I FEATURES is greatly im proved. E xceptio nally low bias currents o f o n ly ±8 0pA , typical, o ve rth e full m ilitary tem perature range com bine
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120pV
100pAMax
600pA
114dB
MAT-04
MAT04
PM-1008
PM1008GP
PM-1006
pm1008
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR m CCD area image sensor , m w m - :• S7960/S7961 -1008 Back-thinned FFT-CCDs for high-speed application S 7 9 6 0 /S 7 9 6 1 -10 0 8 a re F F T -C C D im a g e se n so rs s p e c ific a lly d e s ig n e d fo r high sp e e d o p e ra tio n . By e m p lo y in g a w id e band w id th o n -c h ip
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S7960/S7961
7960/S7961-1008
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