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    1005 NPN Search Results

    1005 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3046 Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - General Purpose High Current NPN Transistor Array Visit Rochester Electronics LLC Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    1005 NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sd1005

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SD 1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1005 is designed fo r audio frequency pow er a m p lifie r app lica tion, especially in H y b rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • W orld Standard M inia tu re Package


    OCR Scan     		2SD1005 2SB804 sd1005 PDF

    power switching with IRFP450 schematic

    Abstract: POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN-1005 Power MOSFET Avalanche Design Guidelines TABLE OF CONTENTS Page Table of Figures. 2


    Original     		AN-1005 06-Dec-11 power switching with IRFP450 schematic POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche PDF

    POWER MOSFET CIRCUIT

    Abstract: fuel injector mosfet automotive injector fuel injector test fuel injector driver FET injector MOSFET driver irfp*32n50k FET IRFP450 AN-1005 IRF7484
    Text: Application Note AN-1005 Power MOSFET Avalanche Design Guidelines By Tim McDonald, Marco Soldano, Anthony Murray, Teodor Avram Table of Contents Page Table of Figures .3 Introduction .4


    Original     		AN-1005 POWER MOSFET CIRCUIT fuel injector mosfet automotive injector fuel injector test fuel injector driver FET injector MOSFET driver irfp*32n50k FET IRFP450 AN-1005 IRF7484 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTOR / 1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1005 is designed fo r audio frequency pow er am p lifie r app lication, especially in H y b rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		2SD1005 2SD1005 2SB804 PDF

    2SC5601

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5601 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package 1005 PKG


    Original     		2SC5601 2SC5601-T3 2SC5601 PDF

    2SD1005

    Abstract: EL1202 2SB804 IEI-1213 DF RV transistor marking lp nec
    Text: DATA SHEET SILICON TRANSISTOR 2SD 1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 10 05 is designed for audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package


    OCR Scan     		2SD1005 2SB804 2SD1005 EL1202 2SB804 IEI-1213 DF RV transistor marking lp nec PDF

    09 06 248 6834

    Abstract: 2SC5616-T3 2SC5616
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5616 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package 1005 PKG


    Original     		2SC5616 2SC5616-T3 09 06 248 6834 2SC5616-T3 2SC5616 PDF

    fuel injector mosfet

    Abstract: automotive injector fuel injector driver FET switching with IRFP450 schematic injector MOSFET driver INJECTOR POWER MOSFET CIRCUIT AN-1005 fuel injector test solenoid injector
    Text: AN-1005 Rev. 1.0 POWER MOSFET AVALANCHE DESIGN GUIDELINES Application Note Tim McDonald Marco Soldano Anthony Murray Teodor Avram Page 1 of 17 TABLE OF CONTENTS Table of Figures Introduction Overview Avalanche Mode Defined Avalanche Occurrences In Industry Applications


    Original     		AN-1005 fuel injector mosfet automotive injector fuel injector driver FET switching with IRFP450 schematic injector MOSFET driver INJECTOR POWER MOSFET CIRCUIT AN-1005 fuel injector test solenoid injector PDF

    5252 F 0911

    Abstract: 5252 F 1108 2SC5615-T3 2SC5615 5252 F 0906
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz


    Original     		2SC5615 S21e2 2SC5615-T3 5252 F 0911 5252 F 1108 2SC5615-T3 2SC5615 5252 F 0906 PDF

    5252 F 1108

    Abstract: 5252 F 1104 5252 F 1120 5252 F 1103 5252 F 1114 2SC5615 5252 F 1105 5252 F 0911 5252 1101 5252 F 1105 transistor
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz


    Original     		2SC5615 S21e2 2SC5615-T3 5252 F 1108 5252 F 1104 5252 F 1120 5252 F 1103 5252 F 1114 2SC5615 5252 F 1105 5252 F 0911 5252 1101 5252 F 1105 transistor PDF

    724G

    Abstract: No abstract text available
    Text: MLN1005-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN 1005-28S is a Common Emitter Device Designed for General Purpose Class A and AB Amplifier Applcations up to 1200 MHz. PACKAGE STYLE .280" 4L STUD A 45° C E B FEATURES INCLUDE: E B • Gold Metalization


    Original     		MLN1005-28S 1005-28S 724G PDF

    ASI1005

    Abstract: ASI10524
    Text: 1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz


    Original     		ASI1005 ASI1005 ASI10524 PDF

    5252 F 1108

    Abstract: 5252 F 1008 5252 F 1004
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz


    Original     		2SC5615 S21e2 2SC5615 2SC5615-T3 5252 F 1108 5252 F 1008 5252 F 1004 PDF

    1005 NPN

    Abstract: ASI1005 ASI10524
    Text: 1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz


    Original     		ASI1005 1005 NPN ASI1005 ASI10524 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1713-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: 1718-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Abstract: No abstract text available
    Text: 1441-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: 1723-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)20 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: 1726-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: 1711-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: 1401-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)250 Absolute Max. Power Diss. (W)625 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: 1716-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: 1714-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Untitled

    Abstract: No abstract text available
    Text: 1717-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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