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    1000V MCT Search Results

    1000V MCT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BCR8FM-20LA#BG0 Renesas Electronics Corporation 1000V - 8A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR8FM-20LA#BH0 Renesas Electronics Corporation 1000V - 8A - Triac Medium Power Use Visit Renesas Electronics Corporation
    R7S721000VCBG#AC0 Renesas Electronics Corporation RTOS MPU with 10MB of On-chip RAM Visit Renesas Electronics Corporation
    R7S721000VCFP#AA0 Renesas Electronics Corporation RTOS MPU with 10MB of On-chip RAM Visit Renesas Electronics Corporation
    R7S721000VLFP#AA0 Renesas Electronics Corporation RTOS MPU with 10MB of On-chip RAM Visit Renesas Electronics Corporation

    1000V MCT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    "MOS Controlled Thyristors"

    Abstract: MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1
    Text: Semiconductor S April 1999 CES PRO NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 65A, 1000V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE


    Original     		MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "MOS Controlled Thyristors" MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1 PDF

    MCT harris

    Abstract: M65P100F2 TA49226 scr 2032 MCT3A65P100F2 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v
    Text: MCT3A65P100F2 MCT3D65P100F2 S E M I C O N D U C T O R 65A, 1000V, P-Type MOS-Controlled Thyristor MCT January 1998 Features Description • 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an


    Original     		MCT3A65P100F2 MCT3D65P100F2 150nts 1-800-4-HARRIS MCT harris M65P100F2 TA49226 scr 2032 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v PDF

    "mos controlled thyristor"

    Abstract: MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
    Text: MCTV65P100F1, MCTA65P100F1 S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE CATHODE GATE RETURN CATHODE (FLANGE) • 2000A Surge Current Capability


    Original     		MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "mos controlled thyristor" MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v PDF

    M65P100F1

    Abstract: RHRG75120 equivalent MCT thyristor 1000v
    Text: MCTV65P100F1, MCTA65P100F1 NS SIG E D S E M I C O N D U C T O R 0F2 EW R N 65P10 O F D CT3 DED MEN 00F2, M M O 1 REC 65P NOT MCT3A P-Type April 1998 See Features 65A, 1000V MOS Controlled Thyristor MCT Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC


    Original     		65P10 MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC M65P100F1 RHRG75120 equivalent MCT thyristor 1000v PDF

    MOS-Controlled Thyristor

    Abstract: MOS Controlled Thyristor MCT thyristor TA49226 MCT harris MCT3A65P100F2 MCT thyristor 1000v MCT3D65P100F2 "MOS Controlled Thyristors" 100A gate turn-off
    Text: MCT3A65P100F2, MCT3D65P100F2 Semiconductor CE April 1999 [ /Title MCT3 A65P1 00F2, MCT3 D65P1 00F2 /Subject (65A, 1000V, PType MOSControlled Thyristor (MCT) ) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark IGNS WN DRA EW DES H T I TW ON PAR ETE - N


    Original     		MCT3A65P100F2, MCT3D65P100F2 A65P1 D65P1 -1000V 150oC MO-093AA MOS-Controlled Thyristor MOS Controlled Thyristor MCT thyristor TA49226 MCT harris MCT3A65P100F2 MCT thyristor 1000v MCT3D65P100F2 "MOS Controlled Thyristors" 100A gate turn-off PDF

    Untitled

    Abstract: No abstract text available
    Text: WAFER, HOUSING & TERMINAL PITCH: 1.50x1.50mm TERMINAL- MCt 001 SPECIFICATIONS MC WAFER SERIES t VOLTAGE RATING: 250V AC/DC CURRENT RATING: 1A AC/DC WITHSTAND VOLTAGE: 1000V AC/MINUTE INSULATOR RESISTANCE: 1000M OHM MIN. TEMPERATURE RANGE: -25º C ~ +85º C


    Original     		1000M PDF

    Untitled

    Abstract: No abstract text available
    Text: Carbon Film Leaded Resistor－CFR Series •Construction 2 6 45 3 1 d H L 1 Ceramic Rod 2 Tinned Iron Caps 3 Carbon Film 4 5 6 Non-flame Paint With Sol Vent-proof Color Code Lead Wire ■Dimensions ■Features D Unit: mm Type L D H d Weight g (1000pcs) CFR0318


    Original     		1000pcs) CFR0318 CFR0623 CFR0932 CFR1145 CFR1550 MIL-STD-202, PDF

    MFR1550

    Abstract: jis b 0623 MFR1145 0623 ea FB 3307 MFR0932 E192 JIS C5202 MFR0318
    Text: Leaded Metal Film Precision Resistor－MFR Series Features －Very Tight Tolerance from ±0.1%～1% －Extremely Low TCR from ±15～100PPM/℃ －Usually broad selection of Power Rating 1/8W, 1/4W, 1/2W, 1W, 2W,3W at 70℃ －Lead Pb -free and RoHS compliant


    Original     		15100PPM/ MFR1550 jis b 0623 MFR1145 0623 ea FB 3307 MFR0932 E192 JIS C5202 MFR0318 PDF

    Untitled

    Abstract: No abstract text available
    Text: 【CFR Series】 CFR0318, 0623, 0932, 1145, 1550 Carbon Film Leaded Resistor •Features －The most economic industrial investment －Standard tolerance: +/-5% available +/-2% －Excellent long term stability －Termination: Standard solder-plated copper lead


    Original     		CFR0318, 1000pcs) CFR0318 CFR0623 9-Apr-2013 PDF

    Untitled

    Abstract: No abstract text available
    Text: 【MOF Series】 MOF0623, 0932, 1145, 1550, 1765, 2485 Metal Oxide Leaded Film Resistor •Features －Excellent Long-Time stability －High surge / overload capability －Wide resistance range : 0.1Ω~10MΩ －Controlled temperature coefficient －Resistance standard tolerance: ±5% consult factory for ±2%, 1%


    Original     		MOF0623, 9-Apr-2013 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOF0623, 0932, 1145, 1550, 1765, 2485 【MOF Series】 Metal Oxide Leaded Film Resistor •Features －Excellent Long-Time stability －High surge / overload capability －Wide resistance range : 0.1Ω~10MΩ －Controlled temperature coefficient －Resistance standard tolerance: ±5% consult factory for ±2%, 1%


    Original     		MOF0623, 9-Apr-2013 PDF

    Untitled

    Abstract: No abstract text available
    Text: 【FMR Series】 Metal Film Flame-Proof Resistors •Features －Low Noise －Low TCR from ±15～100PPM/℃ －High Precision from ±0.1%～1% －Complete Flameproof Construction UL-1412 . －Coating meets UL94V-0 ■Applications －Automotive －Telecommunication


    Original     		100PPM/â UL-1412 UL94V-0 FMR0623 FMR0932 FMR1145 FMR1550 FMR1550 FMR0932 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Customer: Product: Metal Film Flame-Proof Resistors — FMR Series Sizes.: 0623/0932/1145/1550 Issued Date: 9-Apr-13 Edition: REV.A4 VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH 光頡科技股份有限公司高雄分公司


    Original     		9-Apr-13 -C5202 9-Apr-2013 PDF

    Untitled

    Abstract: No abstract text available
    Text: Types MC and MCN Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option Rugged flexibility and compatibility with FR4 boards make Type MC and MCN capacitors ideal for use where other multilayer caps aren’t recommended because of cracking. The natural


    Original     		PDF

    MOS Controlled Thyristor

    Abstract: TA49226
    Text: HX A R R IS MCT3A65P100F2, MCT3D65P100F2 Semiconductor 'NnV' 0 lo<*6'N April 1999 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT p *0 Description Features 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an


    OCR Scan     		MCT3A65P100F2, MCT3D65P100F2 -1000V 000A/| MOS Controlled Thyristor TA49226 PDF

    MCT thyristor 1000v

    Abstract: No abstract text available
    Text: MCTV65P100F1, MCTA65P100F1 HARRIS S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1 9 9 5 Features Package JE D E C S T Y LE TO -247 • 65A,-1000V ANO DE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLA NG E) • 2000A Surge Current Capability


    OCR Scan     		MCTV65P100F1, MCTA65P100F1 -1000V -093A MCT thyristor 1000v PDF

    diode 6A 1000v

    Abstract: diode 400V 4A Hyperfast Diode 1200V IGBT 1000V .50A RHRP3060 400v 50A DIODE rhrp15120 rhrp860 diode rhrp8120 diode RHRP3080
    Text: _ MCT/IGBT/DIODES 7 HYPERFAST SINGLE DIODES PAGE SELECTION G U ID E . 7-3 HYPERFAST SINGLE DIODE DATA SHEETS


    OCR Scan     		RHRD440. RHRD450, RHRD460, RHRD440S, RHRD450S, RHRD460S RHRD4120, RHRD4120S RHRD640, RHRD650, diode 6A 1000v diode 400V 4A Hyperfast Diode 1200V IGBT 1000V .50A RHRP3060 400v 50A DIODE rhrp15120 rhrp860 diode rhrp8120 diode RHRP3080 PDF

    diode mur

    Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
    Text: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.


    OCR Scan     		GE1001, GE1002, GE1003, GE1004 GE1101, GE1102, GE1103, GE1104 GE1301, GE1302, diode mur 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A PDF

    igbt 1000v 80a

    Abstract: 30A, 600v DIODE
    Text: — MCT/IGBT/DIODES — 5 ULTRAFAST SINGLE DIODES PAGE SELECTION G U ID E . 5-3 MUR810, MUR815,


    OCR Scan     		MUR810, MUR815, MUR820, RURP810, RURP815, RURP820 MUR840, MUR850, MUR860, RURP840, igbt 1000v 80a 30A, 600v DIODE PDF

    igbt 200v 30a

    Abstract: mur1620 igbt 1000v 30a 30A100V diode 6A 100v
    Text: - MCT/IGBT/DI0DESÎ6 ULTRAFAST DUAL DIODES PAGE SELECTION G U ID E . 6-3 BYW51-100, BYW51-150,


    OCR Scan     		BYW51-100, BYW51-150, BYW51-200 MUR1610CT, MUR1615CT, MUR1620CT, RURP810CC, RURP815CC, RURP820CC MUR3010PT. igbt 200v 30a mur1620 igbt 1000v 30a 30A100V diode 6A 100v PDF

    Untitled

    Abstract: No abstract text available
    Text: — MCT/IGBT/DI0DESÎ8 HYPERFAST DUAL DIODES PAGE SELECTION G U ID E . 8-2 HYPERFAST DUAL DIODE DATA SHEETS


    OCR Scan     		RHRP840CC, RHRP850CC, RHRP860CC RHRP870CC, RHRP880CC, RHRP890CC, RHRP8100CC RHRP8120CC RHRG1540CC, RHRG1550CC, PDF

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V PDF

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT PDF

    MOS Controlled Thyristor

    Abstract: MCT thyristor MCT thyristor 1000v "mos controlled thyristor"
    Text: ~ MCT/IQBT/DI0DESI2 MOS CONTROLLED THYRISTORS PAGE SELECTION G U ID E .


    OCR Scan     		TA65P100F1 TA75P60E1 MOS Controlled Thyristor MCT thyristor MCT thyristor 1000v "mos controlled thyristor" PDF