1000V MCT Search Results

Contextual Info: MCTV65P100F1, MCTA65P100F1 H A R R IS X Semiconductor * # $ * » * * * * April 1999 65 A, 1000V P-Type MOS Controlled Thyristor MCT cess p *0 < Features Package JEDEC STYLE TO-247 • 65A,-1000V ANODE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLANGE)

MOS Controlled Thyristor

Abstract: TA49226
Contextual Info: HX A R R IS MCT3A65P100F2, MCT3D65P100F2 Semiconductor 'NnV' 0 lo<*6'N April 1999 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT p *0 Description Features 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an

"MOS Controlled Thyristors"

Abstract: MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1
Contextual Info: Semiconductor S April 1999 CES PRO NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 65A, 1000V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE

MCT harris

Abstract: M65P100F2 TA49226 scr 2032 MCT3A65P100F2 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v
Contextual Info: MCT3A65P100F2 MCT3D65P100F2 S E M I C O N D U C T O R 65A, 1000V, P-Type MOS-Controlled Thyristor MCT January 1998 Features Description • 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an

"mos controlled thyristor"

Abstract: MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
Contextual Info: MCTV65P100F1, MCTA65P100F1 S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE CATHODE GATE RETURN CATHODE (FLANGE) • 2000A Surge Current Capability

MCT thyristor 1000v

Contextual Info: MCTV65P100F1, MCTA65P100F1 HARRIS S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1 9 9 5 Features Package JE D E C S T Y LE TO -247 • 65A,-1000V ANO DE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLA NG E) • 2000A Surge Current Capability

M65P100F1

Abstract: RHRG75120 equivalent MCT thyristor 1000v
Contextual Info: MCTV65P100F1, MCTA65P100F1 NS SIG E D S E M I C O N D U C T O R 0F2 EW R N 65P10 O F D CT3 DED MEN 00F2, M M O 1 REC 65P NOT MCT3A P-Type April 1998 See Features 65A, 1000V MOS Controlled Thyristor MCT Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC

MOS-Controlled Thyristor

Abstract: MOS Controlled Thyristor MCT thyristor TA49226 MCT harris MCT3A65P100F2 MCT thyristor 1000v MCT3D65P100F2 "MOS Controlled Thyristors" 100A gate turn-off
Contextual Info: MCT3A65P100F2, MCT3D65P100F2 Semiconductor CE April 1999 [ /Title MCT3 A65P1 00F2, MCT3 D65P1 00F2 /Subject (65A, 1000V, PType MOSControlled Thyristor (MCT) ) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark IGNS WN DRA EW DES H T I TW ON PAR ETE - N

Contextual Info: WAFER, HOUSING & TERMINAL PITCH: 1.50x1.50mm TERMINAL- MCt 001 SPECIFICATIONS MC WAFER SERIES t VOLTAGE RATING: 250V AC/DC CURRENT RATING: 1A AC/DC WITHSTAND VOLTAGE: 1000V AC/MINUTE INSULATOR RESISTANCE: 1000M OHM MIN. TEMPERATURE RANGE: -25º C ~ +85º C

diode 6A 1000v

Abstract: diode 400V 4A Hyperfast Diode 1200V IGBT 1000V .50A RHRP3060 400v 50A DIODE rhrp15120 rhrp860 diode rhrp8120 diode RHRP3080
Contextual Info: _ MCT/IGBT/DIODES 7 HYPERFAST SINGLE DIODES PAGE SELECTION G U ID E . 7-3 HYPERFAST SINGLE DIODE DATA SHEETS

diode mur

Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Contextual Info: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.

igbt 1000v 80a

Abstract: 30A, 600v DIODE
Contextual Info: — MCT/IGBT/DIODES — 5 ULTRAFAST SINGLE DIODES PAGE SELECTION G U ID E . 5-3 MUR810, MUR815,

igbt 200v 30a

Abstract: mur1620 igbt 1000v 30a 30A100V diode 6A 100v
Contextual Info: - MCT/IGBT/DI0DESÎ6 ULTRAFAST DUAL DIODES PAGE SELECTION G U ID E . 6-3 BYW51-100, BYW51-150,

Contextual Info: — MCT/IGBT/DI0DESÎ8 HYPERFAST DUAL DIODES PAGE SELECTION G U ID E . 8-2 HYPERFAST DUAL DIODE DATA SHEETS

TRANSISTOR BIPOLAR 400V 20A

Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
Contextual Info: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .

MOS Controlled Thyristor

Abstract: MCT thyristor MCT thyristor 1000v "mos controlled thyristor"
Contextual Info: ~ MCT/IQBT/DI0DESI2 MOS CONTROLLED THYRISTORS PAGE SELECTION G U ID E .

Contextual Info: Carbon Film Leaded Resistor－CFR Series •Construction 2 6 45 3 1 d H L 1 Ceramic Rod 2 Tinned Iron Caps 3 Carbon Film 4 5 6 Non-flame Paint With Sol Vent-proof Color Code Lead Wire ■Dimensions ■Features D Unit: mm Type L D H d Weight g (1000pcs) CFR0318

MFR1550

Abstract: jis b 0623 MFR1145 0623 ea FB 3307 MFR0932 E192 JIS C5202 MFR0318
Contextual Info: Leaded Metal Film Precision Resistor－MFR Series Features －Very Tight Tolerance from ±0.1%～1% －Extremely Low TCR from ±15～100PPM/℃ －Usually broad selection of Power Rating 1/8W, 1/4W, 1/2W, 1W, 2W,3W at 70℃ －Lead Pb -free and RoHS compliant

Contextual Info: 【CFR Series】 CFR0318, 0623, 0932, 1145, 1550 Carbon Film Leaded Resistor •Features －The most economic industrial investment －Standard tolerance: +/-5% available +/-2% －Excellent long term stability －Termination: Standard solder-plated copper lead

Contextual Info: 【MOF Series】 MOF0623, 0932, 1145, 1550, 1765, 2485 Metal Oxide Leaded Film Resistor •Features －Excellent Long-Time stability －High surge / overload capability －Wide resistance range : 0.1Ω~10MΩ －Controlled temperature coefficient －Resistance standard tolerance: ±5% consult factory for ±2%, 1%

Contextual Info: MOF0623, 0932, 1145, 1550, 1765, 2485 【MOF Series】 Metal Oxide Leaded Film Resistor •Features －Excellent Long-Time stability －High surge / overload capability －Wide resistance range : 0.1Ω~10MΩ －Controlled temperature coefficient －Resistance standard tolerance: ±5% consult factory for ±2%, 1%

Contextual Info: 【FMR Series】 Metal Film Flame-Proof Resistors •Features －Low Noise －Low TCR from ±15～100PPM/℃ －High Precision from ±0.1%～1% －Complete Flameproof Construction UL-1412 . －Coating meets UL94V-0 ■Applications －Automotive －Telecommunication

Contextual Info: Data Sheet Customer: Product: Metal Film Flame-Proof Resistors — FMR Series Sizes.: 0623/0932/1145/1550 Issued Date: 9-Apr-13 Edition: REV.A4 VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH 光頡科技股份有限公司高雄分公司

Contextual Info: Types MC and MCN Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option Rugged flexibility and compatibility with FR4 boards make Type MC and MCN capacitors ideal for use where other multilayer caps aren’t recommended because of cracking. The natural