100000H Search Results

induction furnace

Abstract: induction furnace manual MKP CAPACITOR induction heating manual capacitor esta 0.3 capacitor 104 High Frequency Induction furnace capacitor MKP 1000V LM 072 MKP 1000V
Contextual Info: General Information Vishay ESTA Capacitors For Induction Equipment PRODUCTION PROGRAM “NF” = Line frequency 50/60Hz RATING LIMITS : 200 - 3000V “MF” = Medium frequency 100 - 100000Hz : 100 - 3000V TRADE NAMES ESTAdry = MKP-type capacitor, dry, use at line frequency 50/60Hz,

lm 1470

Abstract: U 1560 1470 LM bolts m12 ESTA
Contextual Info: Phawoc Vishay ESTA Medium Frequency Capacitors, Water Cooled ESTAfilm , SUBDIVIDED IN PARTIAL OUTPUTS, 10000 – 100000Hz water inlet and outlet DESIGN rating plate cooling pipe ø 12 x 1 H1 • All-film windings in brass sheet welded casing; • Extremely low-inductance version;

lm 1470

Abstract: ESTA
Contextual Info: Phawoc Vishay ESTA Medium Frequency Capacitors, Water Cooled ESTAfilm , SUBDIVIDED IN PARTIAL OUTPUTS, 10000 – 100000Hz water inlet and outlet DESIGN rating plate cooling pipe ø 12 x 1 H1 • All-film windings in brass sheet welded casing; • Extremely low-inductance version;

40057

Abstract: 25234 21220 1784 50469 8421 8922 9452 30009
Contextual Info: 標準音高 = 60 sample rate = 16842 play sample rate = 4000 ~ 100000Hz 36 4211 37 4461 38 4726 39 5007 40 5305 41 5620 42 5955 43 6309 44 6684 45 7081 46 7502 47 7948 48 8421 49 8922 50 9452 51 10014 52 10610 53 11241 54 11909 55 12617 56 13368 57 14162

bolts m12

Abstract: ESTA lm 1470 13059
Contextual Info: Phawoc Vishay ESTA Medium Frequency Capacitors, Water Cooled ESTAfilm , SUBDIVIDED IN PARTIAL OUTPUTS, 10000 – 100000Hz water inlet and outlet DESIGN rating plate cooling pipe ø 12 x 1 H1 • All-film windings in brass sheet welded casing; • Extremely low-inductance version;

th50vsf1400

Abstract: BA30
Contextual Info: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory

Contextual Info: SAW Components SAW filter UMTS RF Filter Series/type: Ordering code: B3668 B39202B3668U410 Date: Version: June 06, 2012 2.0  EPCOS AG 2012. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.

MX25L1635D

Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
Contextual Info: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5

V850E/IA1

Contextual Info: User’s Manual TM V850E/IA1 32-Bit Single-Chip Microcontrollers Hardware µPD703116 µPD703116 A µPD703116(A1) µPD70F3116 µPD70F3116(A) µPD70F3116(A1) Document No. U14492EJ3V0UD00 (3rd edition) Date Published February 2003 N CP(K) Printed in Japan

Contextual Info: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4

Contextual Info: User’s Manual V850E/ME2 32-Bit Single-Chip Microcontroller Hardware µPD703111A Document No. U16031EJ3V0UD00 3rd edition Date Published June 2004 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U16031EJ3V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

SPRZ200

Contextual Info: TMS320VC5509A Digital Signal Processor Silicon Errata SPRZ200 June 2003 Copyright  2003, Texas Instruments Incorporated TMS320VC5509A Silicon Errata Literature Number Contents 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

M29W320DT

Abstract: M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

24CO8

Abstract: a19t transistor 24co4 IC circuit diagram pin configurations of 24co4 1 24co4 S5933QE Sandy Bridge eeprom 24co2 24CO2 CSI 24C04
Contextual Info: A PPLIED M ICRO C IRCUITS C ORPORATION PCI PRODUCTS DATA BOOK For Marketing and Application Information Contact: Please refer to AMCC’s website at www.amcc.com for the latest Device Summary information for the S5920 and S5933 PCI products. Applied Micro Circuits Corporation

14 pin LCD monocrome connector

Abstract: lcd ramdac capacitor bc series 10uf/63V toshiba lcd power board schematic LCD dots toshiba 320X240 LP29 CORE SED1354F hitachi lcd backlight schematic lcd 240 128 ts SED1354
Contextual Info: MF1072-02 ll er s o r e t ri n 54 13 ED Do a M t cs i h p a r S trix G o e C S D LC c Te c i hn a M al l a nu NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

Contextual Info: FMP3217CAx CMOS LPRAM Document Title 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. 0.0 History Draft date Initial Draft Remark Oct,17th, 2007 1 Revision 0.0 Oct. 2007 FMP3217CAx CMOS LPRAM 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: FUJITSU SEMICONDUCTOR CM44-10134-1E CONTROLLER MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90945 Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90945 Series HARDWARE MANUAL FUJITSU LIMITED PREFACE • Objectives and intended reader Thank you very much for your continued patronage of Fujitsu semiconductor products.

Contextual Info: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion