100 CJB EQUIVALENT Search Results

DIN 16901

Abstract: DIN 16901 130 ISO 2768 fK FS300R12KE4 DIN ISO 2768-M DIN 2768-M
Contextual Info: Technische Information / technical information FS300R12KE4 IGBT-Module IGBT-modules EconoPACK + B-Serie Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode EconoPACK™+ B-series module with trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter

DIN 16901 130

Abstract: ISO 2768 fK DIN 16901 140 fs450r12ke4 FS450R12K
Contextual Info: Technische Information / technical information FS450R12KE4 IGBT-Module IGBT-modules EconoPACK + B-Serie Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode EconoPACK™+ B-series module with trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter

CMLSH1-40

Contextual Info: CTLSH1-40M563 SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY RECTIFIER TLM563 CASE • Device is Halogen Free by design APPLICATIONS: w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH1-40M563 is a high quality, low VF Schottky Rectifier packaged

CMLSH1-40

Abstract: DSA00300037
Contextual Info: Central CTLSH1-40M563 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY RECTIFIER LOW VF Top View Bottom View TLM563 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH1-40M563 is a high quality, low VF Schottky Rectifier packaged in a

Contextual Info: SIEMENS KOM 2033 B DAYLIGHT FILTER KOM 2033 BF KOM 2100 B DAYLIGHT FILTER KOM 2100 BF 6-CHIP SILICON PIN PHOTODIODE ARRAY Package Dimensions in mm KOM 2033 B/BF Frame PC board \ A z£ Chip Coating 1.3 ± .5 5 • p.8 * .2 Schematic A1 o — ° K1 A 2o — |> ^ -o K 2

lt 302d

Abstract: voltage follower lm 741 AM102
Contextual Info: Am102/202/302 Voltage Follower Distinctive Characteristics • The Am102/202/302 are functionally, electrically, and pin-for-pin equivalent to the National LM102/ 202/302 • Supp ly voltage range: ±5.0V to ±18V • 100% reliability assurance testing in compliance with

atc100a101kp

Contextual Info: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness RX1214B170W QUICK REFERENCE DATA

MRF581A

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF581 MRF581A MRF5812, R1,R2 NPN Silicon High-Frequency Transistors D e signed for high current low power amplifiers up to 1.0 GHz. • Low N oise 2.0 d B @ 5 0 0 M H z • Low Intermodulation Distortion

Contextual Info: TOSHIBA TA8125S TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 8 12 5 SILICON MONOLITHIC S DUAL PRE-AMPLIFIER The TA8125S is dual output preamplifier designed for car or home use. FEATURES • High Open Loop Voltage Gain : G\j o = TOOdB Typ. at f = 1 kHz

telefunken ha 880

Abstract: BPV20NFL itt 84-10
Contextual Info: Temic BPV20NFL S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPV20NFL is a high speed and high sensitive PIN photo­ diode in a plastic package with a cylindrical side view lens and extra long leads. The epoxy package itself is an IR filter, spectrally

RF5812

Abstract: motorola MRF5812 MRF5812 mrf5812 equivalent
Contextual Info: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MRF581 MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion

Contextual Info: CA3127 HARRIS S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the

delco ic

Contextual Info: 15 12 14 10 1 1 8 9 7 Ï 6 5 4 SYMBOL D E F I N I T I O N TOTAL NO. THE NUMBER INSIDE OF THE SYMBOL SYMBOLS CORRESPONDS TO THE ON NUMBER ON THE DRAWING INSPECTION REPORT LAST NO. FOR THIS USED DRAWING/PART NUMBER CD PREFERRED, 45° ACCEPTABLE 0 .8 ± 0 .3

Contextual Info: r Z J SGS-THOMSON *7W » TSH151 RfflO g[S ilL[i©TO M©i WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 200V4is VERY FAST SETTLING TIME : 70ns (0.1% VERY HIGH INPUT IMPEDANCE

TH 2267

Abstract: equivalent transistor broadband transformers
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages in the 2 .0 -1 0 0 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

MRF5811

Abstract: ADC IC 0808
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz

KM44C1003c

Contextual Info: KM44C1003C CMOS DRAM 1 Mx 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 , power

Contextual Info: Ç ; /r^ T v j ‘v " ^ }X 2 0 2 0 1 ï s _ A-1/-2/-3 C X20202A-1/-2/-3 10/9/8-bit 160MSPS D/A Converter Descriptions A series of D/A converters CX20201A/ CX20202A convert binary data into an analog signal at rates higher than 160 MHz. The devices

jis z 0237

Abstract: l 0734 HP11590B
Contextual Info: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1, T3 NPN Silicon High-Frequency TVansistors M o to r o la P r e fe r r e d D e v ic e s Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz

Contextual Info: M I CR ON T E C H N O L O G Y INC 3 flE D G 0 0 2 3 QS 1 B M R N .-ftt'ir REPLACES: WT9C$G24 1 MEG X 8 DRAM FAST PAGE M O D E FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon gate process

RA5E

Abstract: 100 CJB equivalent D0232
Contextual Info: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

CLC220

Contextual Info: Fast Settling, Wideband Operational Amplifiers APPLICATIONS: FEATURES: • • • • • • • • • • very high speed D to A, A to D conversion high speed fiber optics systems baseband and video communications radar and IF processors very fast risetime pulse amplifiers

Contextual Info: XRD5412 5V, Low Power, Voltage Output Serial 12-bit DAC .the analog plus company TM May 1997-5 FEATURES APPLICATIONS • 12-Bit Resolution • Digital Calibration • Operates from a Single 5V Supply • Battery Operated Instruments • Buffered Voltage Output

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode D e s ig n e d p rim a rily fo r lin e a r la rg e -s ig n a l o u tp u t s ta g e s u p to 150 M H z fre q u e n c y range. • S p e cifie d 5 0 Volts, 30 M H z C h a ra cte ristics