100 AMP CURRENT 1000 VOLT DIODE Search Results

Contextual Info: CBR6M-L010 SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS 6.0 AMP, 100 THRU 1000 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR6M-L010 series types are silicon, single phase, full wave bridge rectifiers designed for general purpose, high current applications.

Contextual Info: CBR4M-L010 SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS 4.0 AMP, 100 THRU 1000 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR4M-L010 series types are silicon, single phase, full wave bridge rectifiers designed for general purpose, high current applications.

CBR8M-L010

Contextual Info: CBR8M-L010 SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS 8.0 AMP, 100 THRU 1000 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR8M-L010 series types are silicon, single phase, full wave bridge rectifiers designed for general purpose, high current applications.

SMD Diode S140

Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Contextual Info: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in

100 Amp current 1000 volt diode

Abstract: 1000 Amp current diode 100 Amp current 500 volt diode 200 Amp current 1000 volt diode MD550 50 Amp current 100 volt diode MDL25800 md356 5701 diode MD358
Contextual Info: MD/MDL 25000C/A Series - 25 Amp MD/MDL 35000C/A Series - 35 Amp MD/MDL 50000C/A Series - 50 Amp Rectifier Automotive Diode Data Sheet Coloured ring denotes cathode Features Oxide Passivated EPI Die Low Forward Voltage Low Leakage High Temperature Solder Compatible

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability at 125°C Ultra Low Thermal Resistance

use igbt for 3 phase induction motor

Abstract: 3 phase brushless 400v
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance

MSK4357

Abstract: 1000 Amp current diode
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance Integral Free Wheeling Fast Recovery Epitaxial Diode (FRED)

10 amp igbt 1000 volt

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance

15 amp 1000 Volt Diode

Abstract: 125OC
Contextual Info: SB039C015-0.5-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

15 amp 1000 Volt Diode

Abstract: 125OC
Contextual Info: SB039C015-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

125OC

Abstract: SB035C015 15 amp 1000 Volt Diode
Contextual Info: SB035C015 - 0.5-W-Ag Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 0.5 Amp, 0.33VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

125OC

Abstract: Schottky diode wafer
Contextual Info: SB035C015-1-W-Ag Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

MYXD30600-10CEN

Abstract: silicon carbide
Contextual Info: SiC Schottky 3 Phase Diode Bridge 600 Volt 10 Amp Hermetic MYXD30600-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation • 6 off high current 10A diodes • High temperature 210°C • HMP solder tinned leads available

MYXDB0600-10CEN

Abstract: silicon carbide
Contextual Info: SiC Schottky Diode Rectifier Bridge 600 Volt 10 Amp Hermetic MYXDB0600-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation • Higher efficiency • High current 10A • High temperature 210°C

ultrafast igbt

Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching

MYXDB0650-10CEN

Abstract: silicon carbide
Contextual Info: SiC Schottky Diode Rectifier Bridge 650 Volt 10 Amp Hermetic MYXDB0650-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 650V isolation • Higher efficiency • High current 10A • High temperature 210°C

Contextual Info: CFSH05-20L SURFACE MOUNT SILICON LOW VF SCHOTTKY DIODE 0.5 AMP, 20 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH05-20L is a silicon Schottky diode designed for applications where ultra small package size and energy efficiency are prime

Contextual Info: CFSH05-20L SURFACE MOUNT SILICON LOW VF SCHOTTKY DIODE 0.5 AMP, 20 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH05-20L is a silicon Schottky diode designed for applications where ultra small package size and energy efficiency are prime

transistor c1417

Abstract: TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530
Contextual Info: Welcome to Thomson-CSF Laser Diodes' site Welcome to the Web site of THOMSON-CSF Laser Diodes TLD your partner in Optoelectronic. TLD offers a large variety of High Power Laser Diodes (795 - 980nm), specific optoelectronic functions, and laser diode components

MYXDS1200-10ABS

Abstract: silicon carbide
Contextual Info: Silicon Carbide Schottky Diode 1200 Volt 10 Amp Hermetic MYXDS1200-10ABS y r a in Product Overview Features Benefits • High voltage 1200V isolation in a small package outline • Essentially no switching losses • Higher efficiency m i l e r P • Reduction of heat sink requirements

SB065

Abstract: 125OC
Contextual Info: SB060C020-3-W-Ag Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

100 Amp current 1300 volt diode

Abstract: 125OC
Contextual Info: SB051C015-1-W-Ag Schottky cr Barrier Diode Wafer 51 Mils, 15 Volt, 1 Amp, 0.30VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier