10.7 MHZ S2P Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: A2T26H160-24S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to

RO4350

Abstract: RO4350B transistor 0882 docsis V 8623 transistor 32QAM CGH55015F1 2J302 CGH5501 CGH55015
Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/

CGH55015F

Abstract: transistor 0882 32QAM cgh55015 256QAM CGH5501 CGH55015F-TB CGH55015-TB VCGH55015F RO4350B
Contextual Info: CGH55015F 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F ideal for 5.5-5.8 GHz WiMAX and

Contextual Info: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal FREE X-Parameters* • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance

Driver amplifier SOT-89

Abstract: MARKING AH1A pha1
Contextual Info: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance

Contextual Info: Ultra High Dynamic Range Monolithic Ampli er 50 PHA-1+ 0.05 to 6 GHz The Big Deal FREE X-Parameters* •฀฀Ultra฀High฀IP3 •฀ Broadband฀High฀Dynamic฀Range฀without฀ ฀ external฀Matching฀Components •฀ May฀be฀used฀as฀a฀replacement฀to฀WJ฀AH1a,b

PHA-1

Abstract: wj ah1 AH1A TB313
Contextual Info: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance

Contextual Info: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal FREE X-Parameters* • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance

CGH55015F1

Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1

CGH55015F1

Abstract: CGH55015P1 CGH5501 CGH55015 CGH55015-TB VCGH55015F
Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1

Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1

17975

Abstract: CGH55015F1 cgh55015 CGH5501 CGH55015P1 CGH55015-TB VCGH55015F 2J302
Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/

Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1

Transistor J550

Abstract: j584 transistor
Contextual Info: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

PL-255

Abstract: GVA-84 Amplifier 1W SOT-89
Contextual Info: 5 Volt-Surface Mount Monolithic Amplifier DC-6 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • Fixed 5V operation • Unconditionally stable • Transient protected

Contextual Info: 5 Volt-Surface Mount Monolithic Ampli er DC-7 GHz Product Features •฀High฀Gain,฀24฀dB฀typ.฀at฀100฀MHz •฀High฀Pout,฀P1dB฀20.5฀dBm฀typ.฀at฀100฀MHz •฀High฀IP3,฀37฀dBm฀typ.฀at฀100฀MHz •฀Ruggedized฀design

Contextual Info: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable

Contextual Info: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable

D260-4118-0000

Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

MARKING V84

Abstract: BLK-18 DF782 GVA-84 N5242A ZX85-12G-S marking 66 mmic sot-89 TB-410-84
Contextual Info: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable

Contextual Info: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable

GVA-84

Contextual Info: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable

Contextual Info: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable

Contextual Info: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable