TSV944
Abstract: smd transistor w16 UM0969 STGIPS10K60A ntc 10 epcos RC06 series W12 hall sensor W16 SMD transistor stm32 encoder VIPer16 applications
Text: UM0969 User manual 3-phase motor control demonstration board featuring IGBT intelligent power module STGIPS10K60A Introduction This document describes the 1 kW 3-phase motor control demonstration board, featuring the STGIPS10K60A: 600 V - 10 A IGBT Intelligent power module. The demonstration board
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UM0969
STGIPS10K60A
STGIPS10K60A:
25L-SDIP
25-lead,
STGIPS10K60A.
STEVAL-IHM027V1
TSV944
smd transistor w16
UM0969
STGIPS10K60A
ntc 10 epcos
RC06 series
W12 hall sensor
W16 SMD transistor
stm32 encoder
VIPer16 applications
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smd transistor w16
Abstract: w13 smd transistor transistor smd w16 W12 hall sensor Transistor hall w12 manual STM32 touch sensing GIPS10K60 smd w16 transistor w12 smd transistor diode 1N4148 SMD PACKAGE DIMENSION
Text: UM0969 User manual 3-phase motor control demonstration board featuring IGBT intelligent power module STGIPS10K60A Introduction This document describes the 1 kW 3-phase motor control demonstration board, featuring the STGIPS10K60A: 600 V - 10 A IGBT Intelligent power module. The demonstration board
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UM0969
STGIPS10K60A
STGIPS10K60A:
25L-SDIP
25-lead,
STGIPS10K60A.
STEVAL-IHM027V1
smd transistor w16
w13 smd transistor
transistor smd w16
W12 hall sensor
Transistor hall w12
manual STM32 touch sensing
GIPS10K60
smd w16 transistor
w12 smd transistor
diode 1N4148 SMD PACKAGE DIMENSION
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Untitled
Abstract: No abstract text available
Text: MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 IC25 = 180 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID MDI 3 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
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ixys 150-12
Abstract: E72873 resistor 240 diode A4 56 ic equivalent MID 400
Text: MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 IC25 = 180 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID MDI 3 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
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Untitled
Abstract: No abstract text available
Text: MID 550-12 A4 MDI 550-12 A4 IGBT Modules IC25 = 670 A VCES = 1200 V VCE sat typ. = 2.3 V Short Circuit SOA Capability Square RBSOA MDI MID 3 3 1 2 3 11 10 9 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
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ic equivalent MID 400
Abstract: E72873 550-12A4 high power free wheeling diode
Text: MID 550-12 A4 MDI 550-12 A4 IGBT Modules IC25 = 670 A VCES = 1200 V VCE sat typ. = 2.3 V Short Circuit SOA Capability Square RBSOA MID MDI 3 3 1 2 3 11 10 9 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
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single phase inverter IGBT
Abstract: wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G
Text: Product Solutions for Inverters in Distributed Power Markets Solar, Wind, UPS 1 Power Semiconductors for Inverters Your Inverter Requirements… Our Business • Comprehensive range of power semiconductor products to meet the needs of 500W to 500kW inverters
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500kW
APT60N60BCSG
00E-07
00E-06
50E-06
single phase inverter IGBT
wind inverter
Thunderbolt
buck 800v igbt
single phase inverter mosfet
single phase full bridge inverter
mosfet power inverter 500w
single phase inverter
SiC IGBT High Power Modules
APT50GT60BRDQ2G
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1200R33KL2C VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage
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FZ1200R33KL2C
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Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ800R33KL2C_B5 VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage
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FZ800R33KL2C
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ800R33KL2C VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage
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FZ800R33KL2C
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ2400R17KE3_B2 VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage
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FZ2400R17KE3
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FZ1600R17KE3_B2
Abstract: fz1600r17ke
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1600R17KE3_B2 VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage
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FZ1600R17KE3
FZ1600R17KE3_B2
fz1600r17ke
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FZ2400R17KE3_B2
Abstract: No abstract text available
Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ2400R17KE3_B2 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1700
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FZ2400R17KE3
FZ2400R17KE3_B2
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Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ800R33KL2C_B5 VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage
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FZ800R33KL2C
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Untitled
Abstract: No abstract text available
Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules FZ1800R12KL4C IGBT- インバータ/IGBT,Inverter
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FZ1800R12KL4C
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Untitled
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Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1800R12KL4C IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues
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FZ1800R12KL4C
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Abstract: No abstract text available
Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules FZ3600R17KE3_B2 暫定データ PreliminaryData IGBT- インバータ/IGBT,Inverter 最大定格/MaximumRatedValues コレクタ・エミッタ間電圧
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FZ3600R17KE3
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MS 600 35
Abstract: FZ2400R12KL4C
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ2400R12KL4C IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues
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FZ2400R12KL4C
MS 600 35
FZ2400R12KL4C
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Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ2400R17KF6C_B2 VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter
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FZ2400R17KF6C
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Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FF400R17KF6C_B2 VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter
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FF400R17KF6C
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Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ1800R12KL4C IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues
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FZ1800R12KL4C
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FF400R17KF6C
Abstract: No abstract text available
Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF400R17KF6C_B2 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter
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Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF600R17KE3_B2 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1700
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FF600R17KE3
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Abstract: No abstract text available
Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF800R17KE3_B2 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1700
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FF800R17KE3
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