DSC10ER
Abstract: DSC40S DSC10H DSC20H DSC30S DSC50S DSC50 dsc30 dsc40
Text: HI G H Wide Bandwidth InGaAs PIN Diodes RE MODEL DSC10ER DSC10H DSC20H DSC30S DSC30 DSC40S DSC40 DSC50S DSC50 ACTIVE AREA DIAMETER 10 10 20 30 30 40 40 50 50 m m m m m m m m m -3 dB BANDWIDTH typ. min. 55 60 GHz 42 45 GHz 32 35 GHz 18 22 GHz 10 11 GHz 14 16 GHz
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DSC10ER
DSC10H
DSC20H
DSC30S
DSC30
DSC40S
DSC40
DSC50S
DSC50
DSC10ER
DSC40S
DSC10H
DSC20H
DSC30S
DSC50S
DSC50
dsc30
dsc40
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10 GHz pin diode
Abstract: 60 GHz PIN diode gaas 20 GHz PIN diode PIN diode 12 GHz 60 GHz PIN diode 836 DIODE
Text: HSCH-9161 GaAs Detector Diode Sensitivity 10 GHz and 30 GHz RL = 10Kohms; Diode mounted in a 2.4mm HP detector package. 30 GHz 10 GHz Pin dBm Vdet (mV) Vdet (mV) -40 0.07 0.07 -30 0.36 0.38 -20 3.2 3.4 -10 28.7 30 -5 71 73 160 163 2 216 219 3 250 253 5 334
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HSCH-9161
10Kohms;
10 GHz pin diode
60 GHz PIN diode gaas
20 GHz PIN diode
PIN diode 12 GHz
60 GHz PIN diode
836 DIODE
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ma4agsw1a
Abstract: J1 diode SN62 PB36 ag2 Microwave PIN diode
Text: MA4AGSW1A AlGaAs SPST Non-Reflective PIN Diode Switch Features V 1.00 MA4AGSW1A Layout Ultra Broad Bandwidth: 18 GHz to 50 GHz Functional Bandwidth : 10 GHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs
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SN62 PB36 ag2
Abstract: sp4t switch die PIN Diode Switch for frequencies up to 10 GHz IRL 1530
Text: MA4AGSW4 AlGaAs SP4T PIN Diode Switch Features V 1.00 MA4AGSW4 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 1.0 dB Insertion Loss, 32 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation
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MA4AGSW3
Abstract: 20 GHz PIN diode SN62 PB36 ag2 SN62 PB36 ag2 gold
Text: MA4AGSW3 AlGaAs SP3T PIN Diode Switch Features V 1.00 MA4AGSW3 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 0.8 dB Insertion Loss, 31 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation
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The-2266
MA4AGSW3
20 GHz PIN diode
SN62 PB36 ag2
SN62 PB36 ag2 gold
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MA4AGSW2
Abstract: SN62 PB36 ag2
Text: MA4AGSW2 AlGaAs SP2T PIN Diode Switch Features V 1.00 MA4AGSW2 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 0.7 dB Insertion Loss, 33 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation
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92256
Abstract: 44750 7432 truth table 90087
Text: AlGaAs SPST Non-Reflective PIN Diode Switch MA4AGSW1A Rev 2.0 FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs
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TUNNEL DIODE
Abstract: No abstract text available
Text: 10 Bit Programmable 60 dB Attenuator 0.5 GHz to 18.0 GHz 4.5 dB IL 0.06 dB Step 15 dBm P1dB TECHNICAL DATA SHEET PE70A6000 The PE70A6000 is a Non-Reflective 10 Bit Programmable 60 dB Pin Diode Attenuator with Step Resolution as Low as 0.06 dB over the Operating Frequency Range from 0.5 GHz to 18 GHz. The PE70A6000 is offered in a slim line housing measuring
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PE70A6000
PE70A6000
sma-female-0-watts-attenuator-pe70a6000-p
TUNNEL DIODE
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spst switch
Abstract: MA4AGSW900-287T
Text: MA4AGSW900-287T AIGaAs PIN Diode High Isolation SPST Switch SOT-23 Package Outline Topview Features n n n n V 1.00 31 dB Isolation @ 0 Volts @ 3 GHz 0.8 dB Loss @ 10 mA @ 3 GHz < 10 nS Switching Speed Useable from 50 MHz to 6.0 GHz GND Description M/A-COM's MA4AGSW900-287T is a Gallium Arsenide SPST
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MA4AGSW900-287T
OT-23
MA4AGSW900-287T
MA4AGSW900-287
spst switch
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Untitled
Abstract: No abstract text available
Text: MASW-000822-1277OT HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features • Exceptional Broadband Performance • Suitable for Higher Power WiMax & WLAN Applications • Lower Loss: Tx = 0.40 dB @ 3.8 GHz, 22mA Rx = 0.60 dB @ 3.8 GHz, 22mA
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MASW-000822-1277OT
16-Lead
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M513
Abstract: MASW-000822-12770T S2803
Text: MASW-000822-1277OT HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features • Exceptional Broadband Performance • Suitable for Higher Power WiMax & WLAN Applications • Lower Loss: Tx = 0.40 dB @ 3.8 GHz, 22mA Rx = 0.60 dB @ 3.8 GHz, 22mA
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MASW-000822-1277OT
16-Lead
M513
MASW-000822-12770T
S2803
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equivalent 3140
Abstract: a 3140 HP 5082-3140 AN929 hp 3140
Text: Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data 5082-3140 5082-3141 Features Outline 60 • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz
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M513
Abstract: MASW-000822-12770T S2803
Text: MASW-000822-1277OT HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features • Exceptional Broadband Performance • Suitable for Higher Power WiMax & WLAN Applications • Lower Loss: Tx = 0.40 dB @ 3.8 GHz, 22mA Rx = 0.60 dB @ 3.8 GHz, 22mA
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MASW-000822-1277OT
16-Lead
M513
MASW-000822-12770T
S2803
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Untitled
Abstract: No abstract text available
Text: Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data 5082-3140 5082-3141 Features Outline 60 • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz
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5965-8882E
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MADL-011023-14150T
Abstract: MADL-011023
Text: MADL-011023-14150T PIN Diode Limiter 10 MHz - 12 GHz Rev. V2 Features • Functional Schematic 3 Terminal LPF Broadband Shunt Structure 10 MHz - 12 GHz Broadband Frequency >50 dBm Peak Power Handling >40 dBm CW Power Handling <0.2 dB Insertion Loss
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MADL-011023-14150T
260oC
MADL-011023
MADP-011029-14150T
ODS-1415
MADL-011023-14150T
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Untitled
Abstract: No abstract text available
Text: MADL-011021-14150T PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz Features • Rev. V1 Functional Schematic 3 Terminal LPF Broadband Shunt Structure 10 MHz - 6 GHz Broadband Frequency > 2.5 W Peak and CW Power Handling < 0.5 dB Shunt Insertion Loss
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MADL-011021-14150T
260oC
MADL-011021
ODS-1415
MADL-011021-14150T.
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TUNNEL DIODE
Abstract: No abstract text available
Text: 30 dB With 10 Bit Programmable TTL Controlled Attenuator, 2.4mm Female To 2.4mm Female, 0.03 dB Steps From 18 GHz To 40 GHz TECHNICAL DATA SHEET PE70A6001 The PE70A6001 is 10 Bit Programmable 30 dB Pin Diode Attenuator with Step Resolution as Low as 0.03 dB over the
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PE70A6001
PE70A6001
com/30db-programmable-2
4mm-female-0-watts-attenuator-pe70a6001-p
TUNNEL DIODE
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j6 diode
Abstract: J1 DIODE J3 diode MA4BN1840-1 J2 diode J4 diode
Text: MA4AGSW5 AlGaAs SP5T Reflective PIN Diode Switch Features n n n n n n n V 1.00 MA4AGSW5 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz Low Current comsumption. -10 mA for low loss state +10 mA for Isolation state
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Untitled
Abstract: No abstract text available
Text: MA4AGSW5 AlGaAs SP5T Reflective PIN Diode Switch Features n n n n n n n V 1.00 MA4AGSW5 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz Low Current comsumption. -10 mA for low loss state +10 mA for Isolation state
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1010* diode
Abstract: No abstract text available
Text: HICRONETICS INC 34E 0000341 D b IÎ1R0 Single Pole Single Throw HIGH BAND 1 GHz to 18.5 GHz PIN Diode •GaAs, MMIC and PIN diode technology •High reliability •Hermetically-sealed •Operates from -55”C to +125°C •Wide bandwidth: 10 MHz to 18.5 GHz
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J10003
NEMJ10006
MEL-STD-883
MIL-STD-883
MIL-STD-105
1010* diode
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5965-8882E
Abstract: POWER12 diode ph-150
Text: That müHÆHEWLETT PACKARD Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data Features • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz
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5965-8882E
44475A4
5965-8882E
POWER12
diode ph-150
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schematic WELDER
Abstract: als38a PIN Diode Driver Circuit PIN DIODE SPDT DRIVER CIRCUITS
Text: MA4GP900 Series & GaAs Beam Lead PIN Diodes Features • SUPERIOR HIGH SPEED MICROWAVE SWITCHING DIODE ■ 2-3 NANOSECOND SWITCHING WHEN DRIVEN FROM TTL LOGIC ■ CAPACITANCE AS LOW AS 0.025 pF SPECIFIED AT 10 GHz ■ SERIES RESISTANCE AS LOW AS 2 OHMS SPECIFIED AT 10 GHz
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MA4GP900
schematic WELDER
als38a
PIN Diode Driver Circuit
PIN DIODE SPDT DRIVER CIRCUITS
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7728A
Abstract: i 7822 7722A 7720A
Text: Series 77, 10 Bit Digital an d Series '78 360° Phase Shifters & Frequency Translators , Both Series, 77 and 78, comprise a family of eight solid-state PIN diode phase shifters covering the frequency range from 0.5 to 18 GHz in four bands; 0.5 to 2 GHz, 2 to 6 GHz, 4 to 12 GHz and 6 to 18 GHz.
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10-bit
255gm
227gm)
7728A
i 7822
7722A
7720A
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MMIC code D
Abstract: MMIC code 61 J10003 mmic code R mmic code h
Text: MICRONETICS INC 34E D 61 blll742 Q00034? 7 H M R O Single Pole Four Throw LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) DES6 EH0 f l f f e .Si. j. •GaAs, MMIC and PIN diode technology •High reliability •Hermetically-sealed
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blll742
Q00034?
MIL-STD-105
MMIC code D
MMIC code 61
J10003
mmic code R
mmic code h
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