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    1.5A NPN TRANSISTOR DATA Search Results

    1.5A NPN TRANSISTOR DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    1.5A NPN TRANSISTOR DATA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SAR554P Datasheet PNP -1.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -1.5A MPT3 Base Collector Emitter 2SAR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554P 3) Low VCE(sat)


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    2SAR554P SC-62) OT-89> 2SCR554P -500mA/ -25mA) R1102A PDF

    D1918

    Abstract: No abstract text available
    Text: 2SD1918 Datasheet NPN 1.5A 160V Middle Power Transistor lOutline Parameter Value VCEO IC 160V 1.5A CPT3 Collector Base Emitter 2SD1918 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V


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    2SD1918 SC-63) OT-428> 2SB1275 D1918 R1102A D1918 PDF

    B1275

    Abstract: No abstract text available
    Text: 2SB1275 Datasheet PNP -1.5A -160V Middle Power Transistor lOutline Parameter Value VCEO IC -160V -1.5A CPT3 Collector Base Emitter 2SB1275 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V


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    2SB1275 -160V -160V SC-63) OT-428> 2SD1918 B1275 B1275 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2702 / 2SD2674 Datasheet NPN 1.5A 12V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 12V 1.5A Base Base Emitter Emitter 2SD2674 SC-96 2SD2702 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1732, 2SB1709


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    2SD2702 2SD2674 SC-96) 2SD2702 2SB1732, 2SB1709 500mA/25mA) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SAR554P 2SAR554PFRA Datasheet PNP -1.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -80V -1.5A MPT3 Base Collector Emitter 2SAR554PFRA 2SAR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554PFRA


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    2SAR554P 2SAR554PFRA AEC-Q101 SC-62) OT-89> 2SCR554PFRA 2SCR554P -500mA/ PDF

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    Abstract: No abstract text available
    Text: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A


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    -100mA -10mA Mar-97 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SCR554P 2SCR554PFRA Datasheet NPN 1.5A 80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC 80V 1.5A MPT3 Base Collector Emitter 2SCR554PFRA 2SCR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554PFRA


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    2SCR554P 2SCR554PFRA AEC-Q101 SC-62) OT-89> 2SAR554PFRA 2SAR554P 500mA/25mA) PDF

    2scr375

    Abstract: No abstract text available
    Text: 2SCR375P Datasheet NPN 1.5A 120V Middle Power Transistor lOutline Parameter Value VCEO IC 120V 1.5A MPT3 Base Collector Emitter 2SCR375P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=800mA/80mA)


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    2SCR375P SC-62) OT-89> 800mA/80mA) R1102A 2scr375 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SCR554R Datasheet NPN 1.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 1.5A TSMT3 Collector Base Emitter 2SCR554R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554R 3) Low VCE(sat) VCE(sat)=0.30V(Max.)


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    2SCR554R SC-96) 2SAR554R 500mA/25mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1756A CPH6539 Bipolar Transistor http://onsemi.com 30V, 1.5A, Low VCE sat NPN Dual CPH6 Features • Small-sized package with two NPN transistors (CPH3215 equivalency) contained in one package • VCEO=30V, IC=1.5A • Low Collector-to-Emitter Saturation Voltage VCE(sat)=0.16V(typ.)@IC=0.75A


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    ENA1756A CPH6539 CPH3215 A1756-6/6 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SAR554R Datasheet PNP -1.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -1.5A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554R 3) Low VCE sat) VCE(sat)= -0.4V(Max.) (IC/IB= -500mA/ -25mA)


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    2SAR554R 2SCR554R -25mA) SC-96) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2662 Datasheet NPN 1.5A 30V Middle Power Transistor lOutline Parameter Value VCEO IC 30V 1.5A MPT3 Base Collector Emitter 2SD2662 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1698 3) Low VCE(sat) VCE(sat)=0.35V(Max.)


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    2SD2662 SC-62) OT-89> 2SB1698 A/50mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SCR554P Datasheet NPN 1.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 1.5A MPT3 Base Collector Emitter 2SCR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554P 3) Low VCE(sat) VCE(sat)=0.30V(Max.)


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    2SCR554P SC-62) OT-89> 2SAR554P 500mA/25mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1698 Datasheet PNP -1.5A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -1.5A MPT3 Base Collector Emitter 2SB1698 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2662 3) Low VCE(sat) VCE(sat)= -0.37V(Max.)


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    2SB1698 SC-62) OT-89> 2SD2662 -50mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: CPH6539 Ordering number : ENA1756A SANYO Semiconductors DATA SHEET CPH6539 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Features • Small-sized package with two NPN transistors CPH3215 equivalency contained in one package • VCEO=30V, IC=1.5A


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    CPH6539 ENA1756A CPH3215 A1756-6/6 PDF

    CPH6539

    Abstract: marking 62712
    Text: CPH6539 Ordering number : ENA1756A SANYO Semiconductors DATA SHEET CPH6539 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Features • Small-sized package with two NPN transistors CPH3215 equivalency contained in one package • VCEO=30V, IC=1.5A


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    ENA1756A CPH6539 CPH3215 A1756-6/6 CPH6539 marking 62712 PDF

    transistor Bd 699

    Abstract: HBD139 HBD140
    Text: HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 2001.08.01 Revised Date : 2001.08.24 Page No. : 1/3 MICROELECTRONICS CORP. HBD139 NPN POWER TRANSISTORS Description PNP power transistor in a TO-126 plastic package. NPN complements: HBD140 Features • High Current max. 1.5A


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    HBD139 O-126 HBD140 transistor Bd 699 HBD139 HBD140 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTD6717E6 ADVANCE INFORMATION COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26 Features & Benefits Mechanical Data NPN Transistor • BVCEO > 15V • IC = 1.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A


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    ZXTD6717E6 100mV -140mV AEC-Q10knowledge DS33653 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity


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    2SA1507/2SC3902 EN2101E 2SA1507 PDF

    2SC1502

    Abstract: a1507 2SC 143 SANYO C3902 2SA1507 2SC3902 TO126ML 2sa1507 Sanyo Semiconductor transistor 160v 1.5a pnp
    Text: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity


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    EN2101E 2SA1507/2SC3902 2SA1507 2SC1502 a1507 2SC 143 SANYO C3902 2SA1507 2SC3902 TO126ML 2sa1507 Sanyo Semiconductor transistor 160v 1.5a pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN6592A CPH6501 Bipolar Transistor http://onsemi.com 30V, 1.5A, Low VCE sat NPN Dual CPH6 Applications • Relay drivers, lamp drivers, motor drivers Features • • • Composite type with two NPN transistors contained in one package, facilitating high-density mounting


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    EN6592A CPH6501 CPH6501 CPH3215. PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4419 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES ・Excellent Switching Times. : ton=1.0 S Max. , tf=0.5μS(Max.) at IC=1.5A.


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    KTC4419 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN1068C NPN Triple Diffused Planar Silicon Transistor 2SC3149 800V/1.5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2010C [2SC3149] 10.2


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    ENN1068C 2SC3149 00V/1 VCBO900V) 2010C 2SC3149] PW300 Cycle10% PDF

    2sc3151

    Abstract: No abstract text available
    Text: Ordering number:ENN1070C NPN Triple Diffused Planar Silicon Transistor 2SC3151 800V/1.5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3151] 15.6


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    ENN1070C 2SC3151 00V/1 VCBO900V) 2SC3151] PW300 Cycle10% 2sc3151 PDF