ag36 diode smd
Abstract: BGA1148 smd 3528 BEAD0603 THR101 SMD T28 MIOBD10 IN R52 M36 smd SMD3528
Text: 5 4 3 2 1 CN1A NONPHY-X16 NONPHY-X16 COMMON 1/2 C4 0.1UF ? ? 10% ? 0402 COMMON 10% ? 0402 COMMON 3V3RUN PCI-Express, Power 3V3RUN 1.5A C33 1UF 2 GND D 5 238 C3 0.1UF ? 10% ? 0402 COMMON 1V8RUN (3.5A) CLK_REQ U6 1 4 2 R67 RST_BUF 0402 SC70-5 100 5% COMMON
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NONPHY-X16
NONPHY-X16
SC70-5
10K/B
BGA1148
100/oo)
ag36 diode smd
smd 3528
BEAD0603
THR101
SMD T28
MIOBD10
IN R52
M36 smd
SMD3528
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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RB070M-30
Abstract: 3326P
Text: RB070M-30 Diodes Schottky barrier diode RB070M-30 zApplications General rectification Common cathode dual chip zLand size figure zExternal dimensions (Unit : mm) 0.1±0.1 0.05 1.2 2.6±0.1 ① zFeatures 1) Small power mold type. (PMDU) 2) Low IR
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RB070M-30
OD-123
RB070M-30
3326P
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RB070M-30
Abstract: No abstract text available
Text: RB070M-30 Diodes Schottky barrier diode Silicon Epitaxial Planer RB070M-30 zApplications General rectification (Common cathode dual chip) zLand size figure zExternal dimensions (Unit : mm) 0.15±0.03 1.6±0.1 3.05 2.6±0.1 ① zFeatures 1) Small power mold type.
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RB070M-30
OD-123
RB070M-30
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RB070M-30
Abstract: RB070M
Text: Data Sheet Shottky barrier diode RB070M-30 Dimensions Unit : mm Applications General rectification (Common cathode dual chip) Land size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 Features 1) Small power mold type.
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RB070M-30
OD-123
60Hz1cyc)
200pF
100pF
R1120A
RB070M-30
RB070M
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN3960 FP101 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3960
FP101
FP101
2SB1121
SB05-05CP,
FP101]
500mA
100mA,
250mm2Ã
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AX-8060
Abstract: 2SB1121 FP101 SB05-05CP
Text: Ordering number:EN3960 FP101 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3960
FP101
FP101
2SB1121
SB05-05CP,
FP101]
AX-8060
SB05-05CP
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FP-108-1
Abstract: 2SB1121 FP108 1.5A COMMON CATHODE 2088a TA0316
Text: Ordering number:EN5100 FP108 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN5100
FP108
FP108
2SB1121
SB01015CP,
FP108]
FP-108-1
1.5A COMMON CATHODE
2088a
TA0316
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en3962
Abstract: transistor en3962 FP103 2SB1121 SB07-03C
Text: Ordering number:EN3962 FP103 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3962
FP103
FP103
2SB1121
SB07-03C,
FP103]
en3962
transistor en3962
SB07-03C
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MARKING 108
Abstract: FP-108-1 2SB1121 FP108 TA0316
Text: Ordering number:EN5100 FP108 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN5100
FP108
FP108
2SB1121
SB01015CP,
FP108]
MARKING 108
FP-108-1
TA0316
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RB070M-30
Abstract: No abstract text available
Text: RB070M-30 Diodes Schottky barrier diode RB070M-30 zApplications General rectification Common cathode dual chip zLand size figure zDimensions (Unit : mm) 0.1±0.1 0.05 1.2 2.6±0.1 ① zFeatures 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability
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RB070M-30
OD-123
RB070M-30
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ld33v
Abstract: voltage regulator ld33v VIPER22A OPTOCOUPLER-NPN VIPER22A for DVD ntc5d-9 viper22a transformer design st ld33v VIPER22A Application Note LD33V voltage regulator
Text: AN1897 - APPLICATION NOTE VIPower: LOW COST UNIVERSAL INPUT DVD SUPPLY WITH VIPer22A Jun-feng Zhang INTRODUCTION In the past few years, many consumer products have been provided to the end user, such as DVD or VCD players. Generally their power supply require multiple outputs to supply a variety of control circuits:
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AN1897
VIPer22A
ld33v
voltage regulator ld33v
VIPER22A
OPTOCOUPLER-NPN
VIPER22A for DVD
ntc5d-9
viper22a transformer design
st ld33v
VIPER22A Application Note
LD33V voltage regulator
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sb30-03p
Abstract: No abstract text available
Text: Ordering number:EN5028 FX401 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Features Package Dimensions • Complex type of a low saturation voltage, high speed switching and large current PNP transistor and a fast recovery and low forward voltage Shottky barrier
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EN5028
FX401
FX401
2SB1121
SB3003P,
FX401]
sb30-03p
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EN5028
Abstract: FX401 2SB1121 sb30-03p
Text: Ordering number:EN5028 FX401 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Features Package Dimensions • Complex type of a low saturation voltage, high speed switching and large current PNP transistor and a fast recovery and low forward voltage Shottky barrier
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EN5028
FX401
FX401
2SB1121
SB3003P,
FX401]
EN5028
sb30-03p
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TA-0718
Abstract: 2088a FP107 2SB1396
Text: Ordering number:EN5413A FP107 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.
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EN5413A
FP107
FP107
2SB1396
SBS001.
FP107]
TA-0718
2088a
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2SB1396
Abstract: FP102 SB07-03C
Text: Ordering number:EN3961A FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3961A
FP102
FP102
2SB1396
SB07-03C,
FP102]
SB07-03C
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EN4552
Abstract: 2SA1898 FP106
Text: Ordering number:EN4552 FP106 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.
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EN4552
FP106
FP106
2SA1898
SB1005C.
FP106]
EN4552
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2SA1898
Abstract: FP106 MARKING 106
Text: Ordering number:EN4552 FP106 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.
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EN4552
FP106
FP106
2SA1898
SB1005C.
FP106]
MARKING 106
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FP102 equivalent
Abstract: 2SB1396 FP102 SB07-03C No39
Text: Ordering number:EN3961A FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3961A
FP102
FP102
2SB1396
SB07-03C,
FP102]
FP102 equivalent
SB07-03C
No39
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FP103
Abstract: No abstract text available
Text: Ordering number: EN 3962 No.3962 If _ FP103 PN P E pitaxial P lan ar Silicon T ransistor/ Composite Schottky B arrier Diode S A \Y O , DC/DC Converter Applications F e a tu re s - Composite type with a PNP transistor and a Schottky b a rrier diode contained in one packge,
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FP103
FP103
2SB1121
SB07-03C,
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ULN2064A
Abstract: Mitsubishi Electronics America M2064P FA 132s DARLINGTON TRANSISTOR ARRAY
Text: MITSUBISHI ELEK {LINEAR} NITS Ï Ë | baMTñSt, QOOMlQb ö |~T' -S '2 >- 2S INDUSTRY STANDARD MITSUBISHI LINEAR ICs M2064 SEMICONDUCTORS A 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION The M2064, 4-channel sink driver, consists of 8 NPN transistors
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M2064
M2064,
2064P
a10Hz
ULN2064A
Mitsubishi Electronics America
M2064P
FA 132s
DARLINGTON TRANSISTOR ARRAY
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Untitled
Abstract: No abstract text available
Text: Rectifiers 1 5 -2 5 Amps General Description Teccor manufactures 15 to 25 ampere (RMS) rectifiers with volt ages rated from 50 to 800 volts. Due to the electrically-isolated TO-220 package, these rectifiers may be used in common anode or common cathode circuits using only one part type, thereby
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O-220
O-220AB
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D4020L
Abstract: D8020L E71639 d6020l Teccor Electronics teccor D0520L teccor to220
Text: Rectifiers 1 5 - 2 5 Amps General Description Teccor manufactures 15 to 25 ampere (RMS) rectifiers with volt ages rated from 50 to 800 volts. Due to the electrically-isolated TO-220 package, these rectifiers may be used in common anode or common cathode circuits using only one part type, thereby
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O-220
E71639
O-220AB
D4020L
D8020L
d6020l
Teccor Electronics
teccor
D0520L
teccor to220
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LC125A
Abstract: No abstract text available
Text: b e H 'lñ e ? b3E 001500=1 M IT S U B IS H I DGTL 2*11 * 1 1 1 1 3 MITSUBISHI BIPOLAR DIGITAL ICs IV I5 4 5 3 2 P LOGIC 4-U N IT 1.5A DARLINGTON TRANSISTOR ARRAY W ITH CLAMP DIODE DESCRIPTION The M54532P, 4-channel sink driver, consists of 8 NPN tran
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M54532P,
LC125A
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