1.5A 150V POWER MOSFET Search Results

Contextual Info: FDMC2523P P-Channel QFET tm -150V, -3A, 1.5Ω Features General Description ̈ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has

R015 marking

Contextual Info: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has

Contextual Info: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has

FDMC2523P

Contextual Info: FDMC2523P P-Channel QFET tm -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has

Contextual Info: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has

mosfet p-ch enhancement

Contextual Info: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has

Contextual Info: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Ch annel MOSFET enhancement mode power field effect transistors are produced using Fairchild's pr oprietary, planar stripe, DMOS technology. This advanced technology has

1.5A 150V power mosfet

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS3KMA-5A FS3KMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS3KMA-5A FS3KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KMA-5A OUTLINE DRAWING

ultrasonic piezoelectric transducer driver

Abstract: ultrasound sonar pulser Piezoelectric ultrasound Transducer HV7355 ultrasonic transducer circuit 1 MHz ultrasonic generator 1 Mhz ultrasound transducer circuit driver ultrasound transducer high power driver mems ultrasonic sensors circuit for piezoelectric transducer
Contextual Info: Product Summary Sheet HV7355 Eight-Channel, High Speed, Unipolar, Ultrasound Pulser 1.5A 150V Applications: VDD AVDD VLL ►► Hand held and portable diagnostic medical ultrasound scanners ►► Piezoelectric transducer drivers ►► NDT transmitters ►► Pulse waveform

RDX030N60

Contextual Info: RDX030N60 Transistors 10V Drive Nch MOSFET RDX030N60 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.

Contextual Info: PA96 PA96 PA96 Power Operational Amplifier FEATURES • • • • • HIGH VOLTAGE - 300 VOLTS HIGH OUTPUT CURRENT – 1.5 AMPS 70 WATT DISSIPATION CAPABILITY 175 MHz GAIN BANDWIDTH 250 V/µ-SECOND SLEW RATE APPLICATIONS • • • • 8-PIN TO-3 PACKAGE STYLE CE

IRF9622

Abstract: IRF9620 IRF9623 IRF9621 TB334
Contextual Info: IRF9620, IRF9621, IRF9622, IRF9623 S E M I C O N D U C T O R -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

PA96 application circuit

Abstract: PZT Transducer
Contextual Info: PA96 PA96 PA96 Power Operational Amplifier FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH • 250 V/µ-SECOND SLEW RATE APPLICATIONS • PZT DRIVE • MAGNETIC DEFLECTION

Contextual Info: PA96 PA96 PA96 Power Operational Amplifier FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH • 250 V/µ-SECOND SLEW RATE APPLICATIONS • PZT DRIVE • MAGNETIC DEFLECTION

Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

Contextual Info: PA96 PA96 PA96 Power Operational Amplifier FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH • 250 V/µ-SECOND SLEW RATE APPLICATIONS • PZT DRIVE • MAGNETIC DEFLECTION

Contextual Info: PA96 PA96 P r o d uPA96 c t IInnnnoovvaa t i o n FFr roomm Power Operational Amplifier FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH • 250 V/µ-SECOND SLEW RATE APPLICATIONS

PA96

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PA96 application circuit

Abstract: PA96 PA08 PA08A 800 watt audio mosfet amplifier
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Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

Contextual Info: 2SK1085-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier

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IS-2100ARH

Abstract: IS2100ARH IS9-2100ARH-Q IS9-2100ARH8 high frequency half bridge IS921 5962F9953602VXC
Contextual Info: IS-2100ARH TM Data Sheet September 2001 Radiation Hardened High Frequency Half Bridge Driver File Number 9037 Features • Electrically Screened to DSCC SMD # 5962-99536 The Radiation Hardened IS-2100ARH is a high frequency, 150V Half Bridge N-Channel MOSFET Driver IC, which is a