1.27 GHZ TRANSISTOR Search Results

2N4260

Abstract: 2N4261
Contextual Info: TYPES 2N4260, 2N4261 P-N-P SILICON TRANSISTORS B U L L E T IN N O . O L -S 7 3 1 1 9 3 3 , J U N E 1 9 7 3 DESIGNED FOR VHF AND UHF AMPLIFIER APPLICATIONS • High f j . . . 2 GHz Min 2N4261 • Low Capacitances . . . 2.5 pF Max Ccb and Ceb • Calculated f maxt . . . 1.27 GHz Min (2N4261)

1.27 GHz transistor

Abstract: transistor j 127 B15V180
Contextual Info: BIPOLARICS, INC. Part Number B15V180 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V180 is a high performance silicon bipolar transistor intended for medium power linear and Class C

B30V1320

Abstract: transistor j 127
Contextual Info: BIPOLARICS, INC. Part Number B30V1320 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Output Power 8W @ 1.0 GHz • High Gain Bandwidth Product Bipolarics' B30V1320 is a high performance, low cost silicon bipolar

B30V1160

Abstract: B30V1320 1.27 GHz transistor transistor j 127
Contextual Info: BIPOLARICS, INC. Part Number B30V1160 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Output Power 2W @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 400 mA t Bipolarics' B30V1160 is a high performance, low cost silicon bipolar

transistor j 127

Abstract: B20V1160 B30V1320
Contextual Info: BIPOLARICS, INC. Part Number B20V1160 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Output Power 2W @ 1.0 GHz • High Gain Bandwidth Product f = 8.0 GHz @ IC = 320 mA t Bipolarics' B20V1160 is a high performance, low cost silicon bipolar

B20V1160B

Contextual Info: BIPOLARICS, INC Part Number B20V1160B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • High • Common Base Package Configuration Reliability Gold Metallization Nitride Passivation • High Output Power 4 W @ 1.0 GHz • Diffused Ballast Resistors

B30V1160B

Contextual Info: BIPOLARICS, INC Part Number B30V1160B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • High • Common Base Package Configuration Reliability Gold Metallization Nitride Passivation • High Output Power 4 W @ 1.0 GHz • Diffused Ballast Resistors

B30V180B

Contextual Info: BIPOLARICS, INC Part Number B30V180B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Reliability Gold Metallization Nitride Passivation • High Output Power 1 W @ 1.0 GHz • High Gain Bandwidth Product

mm001

Abstract: MM8011 MM8010 MM8008 2sc 684 sonde 813 Ghz oscillator
Contextual Info: M M 8 0 0 8 SILICON MM8010 MM8011 NPN SILICON RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS . . . designed p rim a rily fo r oscillator, frequency m u ltip lie r, and UH'F a m plifier applications in m ilita ry and industrial equipment. • High Power O u tp u t (Oscillator) —

2SC2644

Contextual Info: TO SH IBA _ 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VH F-U HF BAND WIDEBAND AMPLIFIER APPLICATIONS • • « High Gain Low IMD fp = 4 GHz Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

c 5929 transistor

Abstract: transistor k 2541 Transistor C 4927 741 LEM UPA802T 2955 transistor lem 723 733 transistor c 5299
Contextual Info: SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz

transistor s11 s12 s21 s22

Abstract: UPA802T 741 LEM hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 transistor zo 607 NE681 transistor j50
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz

ALR060

Abstract: ASI10513 1402 Transistor
Contextual Info: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz

77505

Abstract: 2310 fx MMA710-SOT89TR 75558 TRANSISTOR 6822 MMA710-SOT89 2944 3443 SOT-89 1000DB MMA710
Contextual Info: MMA710-SOT89 Darlington HBT Amplifier FEATURES G • 100 KHz to 4 GHz Bandwidth • +21 dBm Output Power at P-1dB Compression • +35 dBm Third Order Intercept MMA 710 The MMA710 is a packaged InGaP Heterojunction Bipolar Transistor HBT Darlington amplifier in a low cost SOT-89 surface mount

A1761

Abstract: a1776 A1733
Contextual Info: MOTOROLA Order this document by MRF183/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF183 MRF183S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device 45 WATTS, 1.0 GHz, 28 VOLTS LATERAL N–CHANNEL

uln 2008

Abstract: BFP740 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A
Contextual Info: Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure & ~ 100 nanosecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications

UPA802T

Abstract: a 3120 0537 741 LEM NE681 S21E UPA802T-T1 UPA802T-T1-A 22S21 transistor c 5299
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz

TRANSISTOR C 2 SUB

Abstract: UPA102G UPA102B
Contextual Info: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded

1445s

Abstract: transistor D 1761 PH1617
Contextual Info: ^fccO'H m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.6- 1.7 GHz _ .744 _ 18.90 Features • • • • • • PH1617-10 Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PKP Class A. +49 dBm Typ 3rd Order Intercept Point

UPA102G

Abstract: UPA102B
Contextual Info: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded

A1727

Contextual Info: MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz

Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series

2SH20

Abstract: 2SC2498
Contextual Info: TOSHIBA 2SC2498 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2498 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATION . 5.1 M AX. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage

SPA-1318

Contextual Info: Preliminary Product Description SPA-1318 Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial