1 MBH 50 D 100 Search Results

thermometer

Abstract: DIN EN 60751 14571
Contextual Info: PräzisionsWiderstands­ thermometer electrotherm Pt 100 Ausgabe 04/99 Einsatzgebiete - Temperaturmessung mit Meßgenauigkeit bis zu 0.02 K - als Arbeitsnormal für den Temperaturbereich -80.200°C empfohlen Technische Daten: - Einsatz sorgfältig vorgealterter und selektierter

Contextual Info: AVE mbH Digitally Controlled Line Array Ascolto A.V.E. mbH Audio Vertriebs-Entwicklungsgesellschaft Germany Digitally Controlled Line Array A s c o l t o ® - LH3225 Datasheet Digitally Controlled Line Array Ascolto® LH3225 Datasheet A.V.E. mbH - Germany

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS3T31^ DQ113T1 E • | BYV43_SERIES T-03-19 ' SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and zero

BYV39-35

Abstract: BYV39-40A m1727 BYV39 M0026 M1729 BYV39-30 t03n
Contextual Info: N AMER PHILIPS/DISCRETE TOD D bbSBTBl DGlüb2D 3 BYV39 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES Hlgh-efficiency schottky-barrier rectifier diodes in T0-220 plastic envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge, and high temperature stability. They are

BYV39

Contextual Info: N AMER PHILIPS/DISCRETE TOD D bb53T31 OOlObSO 3 BYV39 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in TO-220 plastic envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge, and high temperature stability. They are

Contextual Info: N AMER PHILIPS/DISCRETE DL.E D • ^ 5 3 ^ 3 1 0011351 7 ■ BYV33 SERIES _ J y T-03-19 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward

T63N

Abstract: philips dl 711
Contextual Info: 11 N AMER P H IL IP S /D IS C R E T E Q tE D PHS1401 SERIES fc>b53T31 Q D l l b T S E • t - 03-n ULTRA FAST-RECOVERY RECTIFIER DIODES The PHS1401 series of devices are glass-passivated, high efficiency, alloy bonded rectifier diodes featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge, and soft

BYV22

Contextual Info: N ANER P H T L I P S /D IS C R E T E TOD D bb53T31 0010564 r 3 BYV22 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are

BT152

Abstract: BT152 Series d8550a VSA060-I D8550 D8552 aa t 224 PHILIPS BT152-400R D8551 TG 56369
Contextual Info: bSE D P H I L I P S INTERNATIONAL • T llQ B E b OQtiSBßS H P H IN BT152 SERIES THYRISTORS Glass-passivated thyristors in TO—220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications

transistor D 2395

Abstract: BLV45/12
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

BLF245

Abstract: SOT123 SOT123 Package MGP175
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF245 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF245 PIN CONFIGURATION • High power gain • Low noise figure • Easy power control

ajs 75-7

Abstract: M3168 M3170 56295B
Contextual Info: BYV120 SERIES T-OJ-17 _ PHILIPS INTERNATIONAL SbE J> I 711002b 0041400 ST7 « P H I N SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are intended for use in

M2873

Abstract: M2876 m2878 M2872 BYV42 Ultra Fast Recovery Double Rectifier Diodes m073 M2877
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D • ^53*131 Â Q022SÖ3 b ■ BY V4 2 b h H I E S T -O Z -rt ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. They are intended fo r

Philips 4312 020

Abstract: blv75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV75/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

SOT123 Package

Abstract: enamelled copper wire tables HF SSB APPLICATIONS BLF145 J119 transistor J-146 MGP040 j146 enamelled copper wire mm table
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain

enamelled copper wire tables

Abstract: BLF145 J146 J-146
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain • Low noise figure k, halfpage

M03A

Contextual Info: -I—1_ QbE D ^MIER^PHXLIPS/discrete LbS m B l O Q in a i 7 C122 SERIES r - 2 S T - l S' THYRISTORS The C l22 series devices are glass-passivated thyristors featuring alloy-bonding, thus being particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching.

m1204 diode

Abstract: M1204 M3154 BYV143-35 BYV143 M3161 m2784 M3152 M31 diode
Contextual Info: ' 11 131=53^31 HSE D N AMER P H I L I P S / D I S C R E T E □ 05271=] 5 • BYV143 SERIES 7 ^ 0 3 -1 ^ SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-ieakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and

BLF244

Abstract: MGP160
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF244 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF244 PIN CONFIGURATION • High power gain • Low noise figure • Easy power control

Contextual Info: 25E D N AUER PHI LIP S/DISCRETE • 1^53=131 0023573 3 ■ BYV34 SERIES T 1 0 3 - /9 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic.- They are intended for

TO-319

Abstract: Ultra Fast Recovery Double Rectifier Diodes metallic rectifier diode BYV32 IEC134 t0319
Contextual Info: - N AMER P H IL IP S /D IS C R E T E 2SE D • - ' - | bbS3T31 005SSS3 dï V<5'd Ô ■ SLRIES T - o S - jC } ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward

BYQ28

Contextual Info: N A ME R PHILIPS/DISCRETE 2 SE D • 1^53=131 0 0 2 2 3 T 5 _ _ S ■ BYQ28 SERIES A 7 - 0 3 -1 7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward

Contextual Info: PBYR1635 PBYR1640 PBYR1645 - N AMER PHILIPS/DISCRETE 25E D E3 fe,b5313]i OOSSTS? T B 7^0 3 - ; 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended fo r use in

Contextual Info: asaL. PBYR3035PT PBYR3040PT PBYR3045PT — N AK ER PHILIPS/DISCRETE 2 SE D E3 ,^53*131 0 0 2 2 1 6 7 fl B T -0 3 -fi SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage