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    1 K AND 1 M RESISTANCE Search Results

    1 K AND 1 M RESISTANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    TLP3406SRH4 Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 30 V/0.9 A, 300 Vrms, S-VSON16T Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRA Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRH Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation

    1 K AND 1 M RESISTANCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY7C1381D, CY7C1381F CY7C1383D, CY7C1383F 18-Mbit 512 K x 36/1 M × 18 Flow Through SRAM 18-Mbit (512 K × 36/1 M × 18) Flow Through SRAM Features Functional Description • Supports 133 MHz bus operations ■ 512 K × 36 and 1 M × 18 common I/O ■ 3.3 V core power supply (VDD)


    Original     		PDF CY7C1381D, CY7C1381F CY7C1383D, CY7C1383F 18-Mbit CY7C1381D/CY7C1381F/CY7C1383D/CY7C1383F

    CY7C1383D-133AXC

    Abstract: No abstract text available
    Text: CY7C1381D CY7C1383D CY7C1383F 18-Mbit 512 K x 36/1 M × 18 Flow-Through SRAM 618-Mbit (512 K × 36/1 M × 18) Flow Through SRAM Features Functional Description • Supports 133 MHz bus operations ■ 512 K × 36 and 1 M × 18 common I/O ■ 3.3 V core power supply (VDD)


    Original     		PDF CY7C1381D CY7C1383D CY7C1383F 18-Mbit 618-Mbit CY7C1381D CY7C1383D-133AXC

    PCN08

    Abstract: No abstract text available
    Text: CY7C1381D, CY7C1381F CY7C1383D, CY7C1383F 18-Mbit 512 K x 36/1 M × 18 Flow-Through SRAM 18-Mbit (512 K × 36/1 M × 18) Flow Through SRAM Features Functional Description • Supports 133 MHz bus operations ■ 512 K × 36 and 1 M × 18 common I/O ■ 3.3 V core power supply (VDD)


    Original     		PDF CY7C1381D, CY7C1381F CY7C1383D, CY7C1383F 18-Mbit CY7C1381D/CY7C1381F/CY7C1383D/CY7C1383F PCN08

    Untitled

    Abstract: No abstract text available
    Text: CY7C1381D CY7C1383D, CY7C1383F 18-Mbit 512 K x 36/1 M × 18 Flow-Through SRAM 18-Mbit (512 K × 36/1 M × 18) Flow Through SRAM Features Functional Description • Supports 133 MHz bus operations ■ 512 K × 36 and 1 M × 18 common I/O ■ 3.3 V core power supply (VDD)


    Original     		PDF CY7C1381D CY7C1383D, CY7C1383F 18-Mbit CY7C1381D/CY7C1383D/CY7C1383F

    Untitled

    Abstract: No abstract text available
    Text: CY7C1381D, CY7C1381F CY7C1383D, CY7C1383F 18-Mbit 512 K x 36/1 M × 18 Flow-Through SRAM 18-Mbit (512 K × 36/1 M × 18) Flow Through SRAM Features Functional Description • Supports 133 MHz bus operations ■ 512 K × 36 and 1 M × 18 common I/O ■ 3.3 V core power supply (VDD)


    Original     		PDF CY7C1381D, CY7C1381F CY7C1383D, CY7C1383F 18-Mbit CY7C1381D/CY7C1381F/CY7C1383D/CY7C1383F

    Untitled

    Abstract: No abstract text available
    Text: CY7C1381D CY7C1383D CY7C1383F 18-Mbit 512 K x 36/1 M × 18 Flow-Through SRAM 18-Mbit (512 K × 36/1 M × 18) Flow Through SRAM Features Functional Description • Supports 133 MHz bus operations ■ 512 K × 36 and 1 M × 18 common I/O ■ 3.3 V core power supply (VDD)


    Original     		PDF CY7C1381D CY7C1383D CY7C1383F 18-Mbit CY7C1381D/CY7C1383D/CY7C1383F

    Untitled

    Abstract: No abstract text available
    Text: CY7C1381D CY7C1383D CY7C1383F 18-Mbit 512 K x 36/1 M × 18 Flow-Through SRAM 618-Mbit (512 K × 36/1 M × 18) Flow Through SRAM Features Functional Description • Supports 133 MHz bus operations ■ 512 K × 36 and 1 M × 18 common I/O ■ 3.3 V core power supply (VDD)


    Original     		PDF CY7C1381D CY7C1383D CY7C1383F 18-Mbit 618-Mbit CY7C1381D

    Untitled

    Abstract: No abstract text available
    Text: CY7C1381D CY7C1383D, CY7C1383F 18-Mbit 512 K x 36/1 M × 18 Flow-Through SRAM 18-Mbit (512 K × 36/1 M × 18) Flow Through SRAM Features Functional Description • Supports 133 MHz bus operations ■ 512 K × 36 and 1 M × 18 common I/O ■ 3.3 V core power supply (VDD)


    Original     		PDF CY7C1381D CY7C1383D, CY7C1383F 18-Mbit CY7C1381D/CY7C1383D/CY7C1383F

    Untitled

    Abstract: No abstract text available
    Text: CY7C1440AV33 CY7C1442AV33 CY7C1446AV33 36-Mbit 1 M x 36/2 M × 18/512 K × 72 Pipelined Sync SRAM 36-Mbit (1 M × 36/2 M × 18/512 K × 72) Pipelined Sync SRAM Features Functional Description[1] • Supports bus operation up to 250 MHz ■ Available speed grades are 250, 200 and 167 MHz


    Original     		PDF CY7C1440AV33 CY7C1442AV33 CY7C1446AV33 36-Mbit CY7C1440AV33/CY7C1442AV33/CY7C1446AV33

    CY7C1440AV33

    Abstract: CY7C1442AV33 CY7C1446AV33 u218
    Text: CY7C1440AV33 CY7C1442AV33 CY7C1446AV33 36-Mbit 1 M x 36/2 M × 18/512 K × 72 Pipelined Sync SRAM 36-Mbit (1 M × 36/2 M × 18/512 K × 72) Pipelined Sync SRAM Features Functional Description[1] • Supports bus operation up to 250 MHz ■ Available speed grades are 250, 200 and 167 MHz


    Original     		PDF CY7C1440AV33 CY7C1442AV33 CY7C1446AV33 36-Mbit 250-MHz CY7C1440AV33 CY7C1442AV33 CY7C1446AV33 u218

    Untitled

    Abstract: No abstract text available
    Text: CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM Features Functional Description The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F[1] SRAM integrates 524,288 × 36 and 1,048,576 × 18 SRAM cells


    Original     		PDF CY7C1380D, CY7C1382D CY7C1380F, CY7C1382F 18-Mbit CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F

    Untitled

    Abstract: No abstract text available
    Text: CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM Features Functional Description The CY7C1380D/CY7C1380F/CY7C1382D/CY7C1382F[1] SRAM integrates 524,288 × 36 and 1,048,576 × 18 SRAM cells


    Original     		PDF CY7C1380D, CY7C1380F CY7C1382D, CY7C1382F 18-Mbit CY7C1380D/CY7C1380F/CY7C1382D/CY7C1382F

    CY7C1460AV25

    Abstract: CY7C1462AV25 CY7C1464AV25
    Text: CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 36-Mbit 1 M x 36/2 M × 18/512 K × 72 Pipelined SRAM with NoBL Architecture 36-Mbit (1 M × 36/2 M × 18/512 K × 72) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™


    Original     		PDF CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 36-Mbit 250-MHz CY7C1460AV25 CY7C1462AV25 CY7C1464AV25

    CY7C1460AV25

    Abstract: CY7C1462AV25 CY7C1464AV25
    Text: CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 36-Mbit 1 M x 36/2 M × 18/512 K × 72 Pipelined SRAM with NoBL Architecture 36-Mbit (1 M × 36/2 M × 18/512 K × 72) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™


    Original     		PDF CY7C1460AV25 CY7C1462AV25 CY7C1464AV25 36-Mbit 250-MHz CY7C1460AV25 CY7C1462AV25 CY7C1464AV25

    Untitled

    Abstract: No abstract text available
    Text: CY7C1370D, CY7C1372D 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Functional Description Features • Pin-compatible and functionally equivalent to ZBT™


    Original     		PDF CY7C1370D, CY7C1372D 18-Mbit 250-MHz

    1-800-SAMTEC-9

    Abstract: BKS-109-01-L-V
    Text: F-206 amtec B K S -1 6 9 -0 1 - L - V - P B K S -1 0 9 -0 1 - L - V BKS - F M and -L M , and BKT options only: B K S -1 2 5 -0 1 - L - V B K T -1 2 9 -0 1 - L - V - S B K T -1 31- 0 3 - F - V B K T -1 4 9 -0 5 -L -V n UCAnCD BKT, BKS 4 DOI ADI7CmJ 1 m m rULAnl£t


    OCR Scan     		PDF F-206 BKS-109-01-L-V BKT-129-01-L-V-S BKT-149-05-L-V BKS-169-01-L-V-P BKT-131-03-F-V aver60 1-800-SAMTEC-9 BKS-109-01-L-V

    Untitled

    Abstract: No abstract text available
    Text: .- nî^inmBm 1 2 k Mw araawlf «f Amptami GmpmIni and b M ta n i « M T k M l to k t « M n p n M « « • ¿ t o tmmmmt wrn m mmmtm REVISIONS ¿TiQEjfjwÆ? toTfiSSl SYM ECN 1 HKS344 DATE DESCRPHON APPROVED 9/16/08 IP Release to customer NOTES: 1.MATERIAL:


    OCR Scan     		PDF HKS344

    mb7138e

    Abstract: mb7138
    Text: FU JITSU PROGRAMMABLE SCHOTTKY 16384-BIT READ ONLY MEMORY M B 7 1 3 7 E /H M B 7 1 3 8 E /H /Y M B 7 1 3 7 E -S K /H -S K M B 7 1 3 8 E -S K /H -5 K /Y -5 K Decem ber 1 987 E d itio n 2 .0 SCHOTTKY 16384-BIT DEAP PROM 2048 OWRDSX 8 BITS T h e F u jits u M B 7 1 3 7 and M B 7 1 3 8 are high speed S c h o ttk y T T L e le c tric a lly


    OCR Scan     		PDF 16384-BIT 11imeters 008I0 20ITYP C2S004S-2C mb7138e mb7138

    BKS S

    Abstract: No abstract text available
    Text: B K S -1 2 5 -0 1 - L - V B K S -1 0 9-0 1 - L - V B K T -1 2 9 -0 1 - L - V - S B K T -1 4 9 -0 5 -L -V B K T -1 3 1 -0 3 -F -V S u rfa c e 1m m P O L A R I Z E D — SPECIFICATIONS For com plete specifications and recom m ended PCB layouts see www .sam tec.com ?BKT or


    OCR Scan     		PDF 852-26904858-Fax: BKS S

    mb7138

    Abstract: B7137 B7138 ta 7137 p
    Text: FU JITSU PROGRAMMABLE SCHOTTKY 16384-BIT READ ONLY MEMORY M B 7 1 3 7 E /H M B 7 1 3 8 E /H /Y M B 7 1 3 7 E .S K /H -S K M B 7 1 3 8 E -S K /H -S K /Y -S K Decem ber 198 7 E d itio n 2 .0 SCHOTTKY 16384-BIT DEAP PROM 2048 OWRDS X 8 BITS The Fujitsu MB7137 and M B7138 are high speed S ch o ttky T T L electrically


    OCR Scan     		PDF 16384-BIT MB7137 B7138 B7137 B7138, 7137E 7138E 28-PAD mb7138 ta 7137 p

    transistor mpsa20 equivalent

    Abstract: bc 357 transistor MPSA20 MPS-K20 MPS-K20 WHITE MPS-K21 MPS-K21 RED MPS-A20 Three-Five MPS-K22
    Text: 2 SILICON M P S - A M P S - K 2 M P S - K 2 2 , M P S - 2 K I , NPN SILICON AMPLIFIER TRANSISTORS NPN SILICON ANN U LAR TRANSISTO RS . . designed fo r u n In audio, radio, a n d television applications. e e M P S - K 2 0 , M P S - K 2 1 , M P S - K 2 2 are 3, 5 and 9


    OCR Scan     		PDF MPS-A20 MPS-K20, MPS-K22 MPS-K21, MPS-K22 MPS-A20, transistor mpsa20 equivalent bc 357 transistor MPSA20 MPS-K20 MPS-K20 WHITE MPS-K21 MPS-K21 RED MPS-A20 Three-Five

    Untitled

    Abstract: No abstract text available
    Text: M m P ¿M O : 1 ¿O K X 1 « , b 4 K X 6 Z / 6 b n M I 3.3V I/O, PIPELINED ZBT SRAM O lV ilU ^ IV IU MT55L128L18P, MT55L64L32P, MT55L64L36P ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 7ns, 7.5ns, 8.5ns and 10ns


    OCR Scan     		PDF MT55L128L18P, MT55L64L32P, MT55L64L36P

    MC1489AL

    Abstract: C1489-M
    Text: M C 1 4 8 9 S G S - T U O M S O N M C 1 4 8 9 A QUAD LINE RECEIVERS INPUT RESISTANCE-3 .0 K to 7.0 K£2 INPUT SIGNAL RANGE - ± 30 V INPUT THRESHOLD HYSTERESIS BUILT-IN RESPONSE CONTROL : a LOGIC THRESHOLD SHIFTING b) INPUT NOISE FILTERING DIP-14 Plastic (0.25) and Ceramic)


    OCR Scan     		PDF DIP-14 SO-14J MC1489 RS-232C. MC1489L, MC1489AL DIP-14 MC1489P, MC1489AP MC1489AL C1489-M

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M i m n M 2 5 b K X 1 8 , 1 2 8 K X 3 2 /3 6 I 2.5V I/O, PIPELINED, SCD SYNCBURST SRAM Q X /M f^ D I O T I M v D U i n Q T l l O I C D A I WI w n « IV I M T58LC256K18G 1, M T58LC128K32G 1, MT58LC128K36G1 3.3V Supply, +2.5V I/O, Pipelined, Burst Counter and Single-Cycle Deselect


    OCR Scan     		PDF T58LC256K18G T58LC128K32G MT58LC128K36G1