40 t 1202 igbt
Abstract: JTS 4PIN 1042a1
Text: TOSHIBA TF1205 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 1 f l ^ Unit in mm ÏÏTOT- TOSHIBA TF1205 is the IGBT gate driver designed fo r use w ith TOSHIBA Insulated Gate Bipolar Transistor M odule and it includes the optical isolator and IGBT gate driver
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TF1205
TF1205
40 t 1202 igbt
JTS 4PIN
1042a1
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IGBT K 40 T 1202
Abstract: 40 t 1202 igbt
Text: TOSHIBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 ? fl f i TOSHIBA TF1206 is the IGBT gate driver designed for use U nit in mm ÏÏTOT- with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver
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TF1206
TF1206
10-42A1A
IGBT K 40 T 1202
40 t 1202 igbt
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 206 Unit in mm TOSHIBA TF1206 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability
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TF1206
TF1206
----15V
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT T C 7 4 A C 1 1 P/F/FN DATA SILICON MONOLITHIC TRIPLE 3 -INPUT AND GATE The TC74AC11 is an advanced high speed CMOS 3-INPUT AND GATE fabricated with silicon gate and double - layer
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TC74AC11
14PIN
14PIN
200mil
150mil
TCH754fl
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TC7SL02
Abstract: TC7SL02F TC7SL02FU
Text: TOSHIBA TC7SL02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL02F, TC7SL02FU 2-INPUT NOR GATE The TC7SL02 is a low voltage operative C2MOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. Operating voltage Vcc (opr 's 1~3V equivalent to 1pc
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TC7SL02F/FU
TC7SL02F,
TC7SL02FU
TC7SL02
TC7SL02F
TC7SL02F
TC7SL02FU
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16PIN
Abstract: 74LS133 TC74HC133AF TC74HC133AP
Text: TOSHIBA TC74HC133AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC133AP, TC74HC133AF 1 3 -IN PU T NAND GATE The TC74HC133A is a high speed CMOS 13-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent
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TC74HC133AP/AF
TC74HC133AP,
TC74HC133AF
13-INPUT
TC74HC133A
16PIN
DIP16-P-300-2
75MAX
74LS133
TC74HC133AF
TC74HC133AP
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TC7SL00
Abstract: TC7SL00F TC7SL00FU
Text: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage Vcc (opr 's 1~3V equivalent to 1pc
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TC7SL00F/FU
TC7SL00F,
TC7SL00FU
TC7SL00
TC7SL00F
TC7SL00F
TC7SL00FU
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TC7SL02F
Abstract: TC7SL02FU TC7SL32 TC7SL32F TC7SL32FU
Text: TOSHIBA TC7SL32F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL32F, TC7SL32FU 2-INPUT OR GATE The TC7SL32 is a low voltage operative C2MOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. Operating voltage V ( x (o p r ) 's 1~3V equivalent to 1pc
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TC7SL32F/FU
TC7SL32F,
TC7SL32FU
TC7SL32
TC7SL02F
TC7SL02FU
TC7SL32F
TC7SL32FU
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TC7SL02F
Abstract: TC7SL02FU TC7SL32 TC7SL32F TC7SL32FU
Text: TOSHIBA TC7SL32F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL32F, TC7SL32FU 2-INPUT OR GATE The TC7SL32 is a low voltage operative C2MOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. Operating voltage V ( x (o p r ) 's 1~3V equivalent to 1pc
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TC7SL32F/FU
TC7SL32F,
TC7SL32FU
TC7SL32
TC7SL02F
TC7SL02FU
TC7SL32F
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA TRIPLE 3 -INPUT CIRCUIT TECHNICAL NAND TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT DATA T C 7 4 A C 1 OP/F/FN SILICON MONOLITHIC GATE The TC74AC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate and double - layer
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TC74AC10
14PIN
200mil
D02T37Ã
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc
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TC7SL00F/FU
TC7SL00F,
TC7SL00FU
TC7SL00
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TC7SL02
Abstract: TC7SL02F TC7SL02FU
Text: TOSHIBA TC7SL02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL02F, TC7SL02FU 2-INPUT NOR GATE The TC7SL02 is a low voltage operative C2MOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc
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TC7SL02F/FU
TC7SL02F,
TC7SL02FU
TC7SL02
TC7SL02F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc
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TC7SL00F/FU
TC7SL00F,
TC7SL00FU
TC7SL00
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7SL08F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL08F, TC7SL08FU 2-INPUT AND GATE The TC7SL08 is a low voltage operative C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc
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TC7SL08F/FU
TC7SL08F,
TC7SL08FU
TC7SL08
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ITT 7
Abstract: No abstract text available
Text: TOSHIBA TC7SL08F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL08F, TC7SL08FU 2-INPUT AND GATE The TC7SL08 is a low voltage operative C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc
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TC7SL08F/FU
TC7SL08F,
TC7SL08FU
TC7SL08
ITT 7
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC4S01F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T• r j ■<WÊÊF; nW 1■ ■f 2 INPUT NOR GATE The TC4S01F is 2-input positive logic NOR gates. Gate output with inverter buffer improve the inputoutput characteristics and even if the load capacitance
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TC4S01F
TC4S01F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA T6L12 TENTATIVE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T fi I 1 ? • m GATE DRIVER FOR TFT LCD PANELS The T6L12 is a 256-channel output gate driver for TFT LCD panels. Since this device accepts external input of
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T6L12
T6L12
256-channel
300pF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC4S71F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T r a<;7 1 F • ■ wê ê f m m m 2 INPUT OR GATE The TC4S71F is 2-input positive logic OR gates. Gate output with inverter buffer improve the inputoutput characteristics and even if the load capacitance
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TC4S71F
TC4S71F
200CTRICAL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V2161 FT-85,-10.-85L.-1 OL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FT is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7
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TC55V2161
FT-85
072-WORD
16-BIT
TC55V2161FT
152-bit
-85L-1
44-P-400-0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC554161 FTI-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTI is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V
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TC554161
FTI-85L
144-WORD
16-BIT
TC554161FTI
304-bit
54-P-400-0
62MAX
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC4SU11F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tfd<;iii 1 F • ■ ■ W ÊF ■ ■ 2 INPUT NAND GATE TC4SU11F is 2 input NAND gate respectively. The internal circuit of only basic NAND circuit without the waveform shaping inverter.
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TC4SU11F
TC4SU11F
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TC51V16160
Abstract: No abstract text available
Text: TOSHIBA TC51V 1 6160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V16160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC51V16160CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as advanced
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TC51V
6160CJ/CFT-50
576-WORD
16-BIT
TC51V16160CJ/CFT
42-pin
50-pin
TC51V16160
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC554161 FTL-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V
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144-WORD
16-BIT
TC554161
FTL-70L
TC554161FTL
304-bit
54-P-400-0
62MAX
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a
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072-WORD
TC55V1001
F/FT/TR/ST/SR-85L
TC55V1001F/FT/TR/ST/SR
576-bit
32-P-0820-0
32-P-0
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