1 GATE TOSHIBA LOGIC Search Results

40 t 1202 igbt

Abstract: JTS 4PIN 1042a1
Contextual Info: TOSHIBA TF1205 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 1 f l ^ Unit in mm ÏÏTOT- TOSHIBA TF1205 is the IGBT gate driver designed fo r use w ith TOSHIBA Insulated Gate Bipolar Transistor M odule and it includes the optical isolator and IGBT gate driver

IGBT K 40 T 1202

Abstract: 40 t 1202 igbt
Contextual Info: TOSHIBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 ? fl f i TOSHIBA TF1206 is the IGBT gate driver designed for use U nit in mm ÏÏTOT- with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver

Contextual Info: TO SH IBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 206 Unit in mm TOSHIBA TF1206 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT T C 7 4 A C 1 1 P/F/FN DATA SILICON MONOLITHIC TRIPLE 3 -INPUT AND GATE The TC74AC11 is an advanced high speed CMOS 3-INPUT AND GATE fabricated with silicon gate and double - layer

TC7SL02

Abstract: TC7SL02F TC7SL02FU
Contextual Info: TOSHIBA TC7SL02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL02F, TC7SL02FU 2-INPUT NOR GATE The TC7SL02 is a low voltage operative C2MOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. Operating voltage Vcc (opr 's 1~3V equivalent to 1pc

16PIN

Abstract: 74LS133 TC74HC133AF TC74HC133AP
Contextual Info: TOSHIBA TC74HC133AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC133AP, TC74HC133AF 1 3 -IN PU T NAND GATE The TC74HC133A is a high speed CMOS 13-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

TC7SL00

Abstract: TC7SL00F TC7SL00FU
Contextual Info: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage Vcc (opr 's 1~3V equivalent to 1pc

TC7SL02F

Abstract: TC7SL02FU TC7SL32 TC7SL32F TC7SL32FU
Contextual Info: TOSHIBA TC7SL32F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL32F, TC7SL32FU 2-INPUT OR GATE The TC7SL32 is a low voltage operative C2MOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. Operating voltage V ( x (o p r ) 's 1~3V equivalent to 1pc

TC7SL02F

Abstract: TC7SL02FU TC7SL32 TC7SL32F TC7SL32FU
Contextual Info: TOSHIBA TC7SL32F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL32F, TC7SL32FU 2-INPUT OR GATE The TC7SL32 is a low voltage operative C2MOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. Operating voltage V ( x (o p r ) 's 1~3V equivalent to 1pc

Contextual Info: INTEGRATED TOSHIBA TRIPLE 3 -INPUT CIRCUIT TECHNICAL NAND TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT DATA T C 7 4 A C 1 OP/F/FN SILICON MONOLITHIC GATE The TC74AC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate and double - layer

Contextual Info: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

TC7SL02

Abstract: TC7SL02F TC7SL02FU
Contextual Info: TOSHIBA TC7SL02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL02F, TC7SL02FU 2-INPUT NOR GATE The TC7SL02 is a low voltage operative C2MOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

Contextual Info: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

Contextual Info: TOSHIBA TC7SL08F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL08F, TC7SL08FU 2-INPUT AND GATE The TC7SL08 is a low voltage operative C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

ITT 7

Contextual Info: TOSHIBA TC7SL08F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL08F, TC7SL08FU 2-INPUT AND GATE The TC7SL08 is a low voltage operative C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

Contextual Info: TOSHIBA TC4S01F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T• r j ■<WÊÊF; nW 1■ ■f 2 INPUT NOR GATE The TC4S01F is 2-input positive logic NOR gates. Gate output with inverter buffer improve the inputoutput characteristics and even if the load capacitance

Contextual Info: TOSHIBA T6L12 TENTATIVE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T fi I 1 ? • m GATE DRIVER FOR TFT LCD PANELS The T6L12 is a 256-channel output gate driver for TFT LCD panels. Since this device accepts external input of

Contextual Info: TOSHIBA TC4S71F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T r a<;7 1 F • ■ wê ê f m m m 2 INPUT OR GATE The TC4S71F is 2-input positive logic OR gates. Gate output with inverter buffer improve the inputoutput characteristics and even if the load capacitance

Contextual Info: TOSHIBA TC55V2161 FT-85,-10.-85L.-1 OL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FT is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7

Contextual Info: TOSHIBA TC554161 FTI-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTI is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V

Contextual Info: TOSHIBA TC4SU11F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tfd<;iii 1 F • ■ ■ W ÊF ■ ■ 2 INPUT NAND GATE TC4SU11F is 2 input NAND gate respectively. The internal circuit of only basic NAND circuit without the waveform shaping inverter.

TC51V16160

Contextual Info: TOSHIBA TC51V 1 6160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V16160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC51V16160CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as advanced

Contextual Info: TOSHIBA TC554161 FTL-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V

Contextual Info: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a