0Q22432 Search Results
0Q22432 Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-30L Low Distortion internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - PldB = 45 dBm at 5.3 GHz to 5.9 GHz |
OCR Scan |
TIM5359-30L TIM5359-30L MW50680196 TCH7250 0Q22432 |