Untitled
Abstract: No abstract text available
Text: ST 22/36 Axial Leads 630 V- . 10,000 VAPPLICATIONS Non-inductive, insulated capacitor. Cylindrical, axial leads, polyester wrapped, epoxy resin sealed. L 25 0.984 min. Some examples of use: High voltage filtering, TV line recuperation. SPACELAB qualified.
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150pF
100nF
100pF
See33
pF/220
pF/680
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Untitled
Abstract: No abstract text available
Text: T H I R DA N G L EP R O J E C T I O N ALTERATION I S S U E I RATED CAP ITEM CODE ※L VOLTAGE F ECQE2Al03R 0 F 250VAC O . 01 12 .5 1 1 1 1 112A123ROF O . 012 1 1 1 1 112A153ROF O . 015 1 1 1 1 1 1 2A183ROF O . 018 1 1 1 1 1 1 2A223R 0 F O . 022 1 1 1 1
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112A123ROF
112A153ROF
2A183ROF
2A333ROF
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CPM72B
Abstract: No abstract text available
Text: S9 10/13/18/27/31 CPM72 — Axial Leads 100/250/400/630 VAPPLICATIONS Non-inductive, insulated capacitor for professional use. Cylindrical axial leads, polyester wrapped, epoxy resin sealed. 25 0.984 min. L Some examples of use: Oscillating circuit, LF filter, coupling and decoupling, frequency
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CPM72
384-1/CECC
30000/UTE
384-2/CECC
30400/UTE
CPM72
CPM72B
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CPM72B
Abstract: CPM72 300nF CAPACITOR capacitor 22 nF nf 18 358 400 nf capacitor
Text: S9 10/13/18/27/31 CPM72 — Axial Leads 100/250/400/630 VAPPLICATIONS Non-inductive, insulated capacitor for professional use. Cylindrical axial leads, polyester wrapped, epoxy resin sealed. 25 0.984 min. L Some examples of use: Oscillating circuit, LF filter, coupling and decoupling, frequency
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CPM72
384-1/CECC
30000/UTE
384-2/CECC
30400/UTE
CPM72
CPM72B
300nF CAPACITOR
capacitor 22 nF
nf 18 358
400 nf capacitor
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capacitor 22 nF
Abstract: 7 NF 13 0600 M nf 828 nf 0102 CPM50 CPM72 capacitors BF CPM83 E12 Series capacitor 25 uF capacitor
Text: ST 22/36 Axial Leads 630 V- . 10,000 VAPPLICATIONS Non-inductive, insulated capacitor. Cylindrical, axial leads, polyester wrapped, epoxy resin sealed. L 25 0.984 min. Some examples of use: High voltage filtering, TV line recuperation. SPACELAB qualified.
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150pF
100nF
100pF
capacitor 22 nF
7 NF 13 0600 M
nf 828
nf 0102
CPM50
CPM72
capacitors BF
CPM83
E12 Series capacitor
25 uF capacitor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF730 MOSFET N-Channel TO-220 1. G FEATURES z 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V z Low gate charge ( typical 25 nC) z Low Crss ( typical 20 pF) z Fast switching
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O-220
IRF730
O-220
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Untitled
Abstract: No abstract text available
Text: i HI R DA N G L EP I l 2 _ J _ E CT~I ITEM CODE ECQE21030B3 1 1 21230B3 1 1 21530B3 1 1 21830B3 1 1 22230B3 1 1 22730B3 1 1 23330B3 1 1 23930B3 1 1 24730B3 1 1 25630B3 1 1 26830B3 1 1 28230 B3 1 1 21040B3 1 21240B3 1 1 21540B3 1 1 21840B3 1 1 22240B3 1 1 22740B3
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ECQE21030B3
21230B3
21530B3
21830B3
22230B3
22730B3
23330B3
23930B3
24730B3
25630B3
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D4EN
Abstract: D4E-1B20N D4E-1E20N D4E-1C20N D4E-1E00N 3M Touch Systems
Text: Small Sealed Switch D4E-@N Slim and Compact Switch with Better Seal and Ensuring Longer Service Life than D4E Limit Switches • Flat springs with an improved lever ratio of the built-in switch ensure smooth snap action and long life expectancy. • Protection cover protects the built-in switch from dust and oil.
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C028-E1-05
D4EN
D4E-1B20N
D4E-1E20N
D4E-1C20N
D4E-1E00N
3M Touch Systems
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Untitled
Abstract: No abstract text available
Text: i H I R DA N G L EP R O J E C T I O NI ALTERATION DIMENSIONS RATED CAP ※ L ※T ※H ※d F VOLTAGE ECQE21030F3 250VDC O . 01 1O .3 4 .4 O .6 .3 7 H 1 1 1 1 1 1 21230F3 O . 012 4 .4 7 .5 1 / 1 / 1 1 1 1 1 1 1 / 21530F3 o . 015 1 1 1 1 1 1 1 1 1 1 1 1
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ECQE21030F3
21230F3
21530F3
21830F3
22230F3
22730F3
23330F3
23930F3
24730F3
25630F3
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r4373
Abstract: No abstract text available
Text: JANSR2N7400 33 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 200V, rDS 0N = 0.4400 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSS230R4
JANSR2N7400
MIL-STD-750,
MIL-S-19500,
500ms;
r4373
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diode PJ 65 MG
Abstract: 5a 12v regula
Text: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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460i2
FSL230D,
FSL230R
MIL-STD-750,
MIL-S-19500,
500ms;
diode PJ 65 MG
5a 12v regula
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Untitled
Abstract: No abstract text available
Text: f Z 7 SGS-TTiOMSON Ä T# MK4505M/S -25/33/50 VERY HIGH-SPEED CMOS CLOCKED FIFO • 1 0 2 4 x 5 ORGANIZATION ■ VERY HIGH PERFORMANCE P art No C ycle Tim e Cycle Frequency A ccess Tim e 4 5 0 5 -2 5 25n s 40M Hz 15ns 4 5 0 5 -3 3 33n s 30M Hz 2 0n s 4 5 0 5 -5 0
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MK4505M/S
4505M
4505S
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shell dep standard 32
Abstract: No abstract text available
Text: 4 DRAWING MADE •n NG IN THIRD 3 ANGLE 15 U N P U B L IS H E D . COPYRIGHT 19 2 PROJECTION RCLCAGCD BY A M P TOR PU D L1 C A T 1 0N INCORPORATED. BD INTERNATIONAL RIGHTS RESERVED. REV I 5 1 0N5 48 ZONE LTR DESCR]PT]ON REV g REDRAWN ECN BD3360 FI -33. 32[1
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BD3360
BD6498
0G40-102-99
27jjm
HD-20
H71-6
amp34993
nip34
shell dep standard 32
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Untitled
Abstract: No abstract text available
Text: JANSR2N7402 33 M ÄRE» Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Features Description • 3A, 500V, rDS 0N = 2.70Q T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r ha s d e v e lo p e d a s e rie s o f R a d ia tio n H a rd e n e d M O S F E T s
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FSS430R4
e1998
JANSR2N7402
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: ISOCOH COMPONENTS LTD WM MfiflbSlO 0000236 b • ISO 4SE P OPTOELECTRONIC SWITCHES T R A N S IST O R FA M ILY VF Ip = 60mA 'r V b v ceo lg=1m A 5V Test b v eco lc= IOOjiA V c e =25V lc 0N lc 0N lc °N Ip = 5mA Ip = 20mA Ip = 30mA V ce = 5V VCE = 5V VCE SAT|
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ISTS823A
ISTS824A
ISTS832S
ISTS832SD
ISTS870A/B
ISTS871A/B
ISTS875A/B
ISTS876A/B
ISTS904
ISTS970TN
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pa68h
Abstract: YTFP150 PA63H NEC PA63H UPA33A YTF840 YTFP450 UPA50A PA71A pamt
Text: - 170 - f £ € tt £ m & m it vm * 1 ft h' V $ Vg s * m * fë I* _ P /P (A) * £ X (V) X fr* d r ch (W) (max) (A) Vg s (V) î£ Rî W s (min) (max) V d s (A) (V) (A) (Ta=25*C) « (min) (max) Vd s (V) (V) (V) Id (A) gm (min) (S) Vds (V) Id (A) YTF840
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40mVmax
400MHz
10niA,
ZPA503T
PA502T
12dBtyp
60mVmax
106nstyp
180nstyp
pa68h
YTFP150
PA63H
NEC PA63H
UPA33A
YTF840
YTFP450
UPA50A
PA71A
pamt
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ISTS804
Abstract: h21A1 sensor icpl3700 H21A2 IS2100G ISTS401 ICPL2502 ICPL2601 h24b1 4N35 cny17
Text: ISOCOH COMPONENTS LTD 4SE D • MfiflbSlO 0000236 b «¡ISO OPTOELECTRONIC SWITCHES VF 'r bvceo Ip = 60mA > to 11 oc > Characteristics lg=1mA Test bveco lc 0N lc °N lc °N Ip = 5mA Ip = 20mA Ip = 30mA VCF = 5V Vce =5V Vce = 5V VCE SAT lE= lOOpA Vce =25V lc = 1.8mA
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H21A1
H21A2
H22A1
H22A2
ISQ74
MOC3009
ISTS100
MOC3010
ISTS101
MOC3011
ISTS804
h21A1 sensor
icpl3700
IS2100G
ISTS401
ICPL2502
ICPL2601
h24b1
4N35 cny17
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Untitled
Abstract: No abstract text available
Text: DRAM Module Numbering '-' '-nU V ^ i C o m p an y Identification A s se m b ly M em ory Depth 1 o r 2 d ig its P ro d u ct R e visio n 25 25 6 K d e p th S p ee d of Part 51 512 K depth P ro d u c i F am ily / Q u alitv D e sianato r Prem ium D R A M 11
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100ns
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Untitled
Abstract: No abstract text available
Text: ADW NCED P ow er Te c h n o lo g y O D APT30M85BNR 300V APT3010BNR 300V O s POWER MOS IV® 40A 0.0850 35A 0.100a AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M AXIM UM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.
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APT30M85BNR
APT3010BNR
APT30M85BNR
APT30M85/301OBNR
-247A
DD0143R
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Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R DG408, DG409 Single 8 -Channel/Differential 4-Channel CMOS Analog Multiplexers October 1993 Features • Description ON-Resistance 100ft Maximum +25°C T h e D G 40 8 Single 8-Channel and D G 40 9 Differential 4Channel monolithic C M O S analog multiplexers are drop-in
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DG408,
DG409
100ft
250ns
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BC337-01
Abstract: 190n0 2N1384 2N2246 usaf510es030 bc337 transistor bc337 hie 1743-0810 2n1680 hie for bc337
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
BC337-01
190n0
2N1384
2N2246
usaf510es030
bc337 transistor
bc337 hie
1743-0810
2n1680
hie for bc337
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Untitled
Abstract: No abstract text available
Text: A d v a n ced P o w er Te c h n o l o g y O D APT6040BNR APT6045BNR O s POWER MOS IV“ 600V 18.0A 0.40U 600V 17.0A 0.450 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS b ' dm ^GS V GSM PD TJ’TSTG All Ratings: T c = 25°C unless otherwise specified.
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APT6040BNR
APT6045BNR
O-247AD
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ta8601bn
Abstract: ta8601 23P100 23A50 P46C 23m500 C20N TA8601B MAXIAU
Text: TOSHIBA Unit: TENTATIVE VIDEO-CHROMA-DEFLECT ION SYSTEM FOR A COLOR TELEVISION NTSC mm Z The TA8601BN combines the Video-Chroma sub system and the Deflection stage on a single monolithic integrated circuit to provide a Color Television Video-Chroma-Deflection systea.
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TA8601BN
TA8601BN
ta8601
23P100
23A50
P46C
23m500
C20N
TA8601B
MAXIAU
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APT10M25BNR
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y O D APT10M25BNR 100V APT10M30BNR 100V O s POWER MOS IV® 75A 0.025Í2 75A 0.030Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'dm V GS ^GSM PD T J’ T STG All Ratings: Tc = 25°C unless otherwise specified.
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APT10M25BNR
APT10M30BNR
-10mS
O-247AD
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