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0G22322 Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-1 OB Features • High power - P ^ b = 40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1cjB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications CE = 25° C |
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TIM1414-1 0G22322 |