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    FIT4 diode

    Abstract: No abstract text available
    Text: • 4302271 00537^1 ms ■ HAS 2N 6800 £3 HARRIS N-Channel Enhancement-Mode Power MOS Field-Effect Transistor August 1991 Package Features T 0 -2 0 5 A F BOTTOM VIEW • 3A, 400V • rDS on = • SOA is Power-Dissipation Limited SOURCE GATE • Nanosecond Switching Speeds


    OCR Scan     		2N6800 LH0063 FIT4 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: • 4305E71 0□ S3 7 Tti hi? m HAS g HARRIS 2N6802 N-Channel Enhancem ent-M ode Power M OS Field-Effect Transistor August 19 9 1 Features Package TQ-205AF m 0 *1.0 EA K fU W l * A , OUUV B O TTO M VIEW * rDS(on = 1 -s r i • SO A is Po w e r-D issip a tio n Lim ited


    OCR Scan     		4305E71 2N6802 TQ-205AF LH0063 PDF