Untitled
Abstract: No abstract text available
Text: FEATURES • Low-power, high-performance CMOS process • Multiplexed address inputs • 262,144 words x 4-bit organization • Read-Modify-Write capabilities • 120/150 ns access time from RE • CE before RE auto refresh • 60/75 ns access time from CE
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1024-bit
M441024xK-12
20-Pin
M441024PK-12
M441024PK-15
M441024HK-12
M441024HK-15
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet August 1996 mi c r o e l e c t r o n i c s gr oup Lucent Technologies Bell Labs Innovations • Four 10 Mbits/s Ethernet transceivers and MACs integrated together with separate transmit and receive port FIFOs and a single DMA interface simplity the design of a frame-switching hub. Each
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ATT1MX10
208-Pin
ATT1MX10-SC
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PDF
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ATIC 64
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT AIPD29F008AL 8M-BIT CMOS LOW-VOLTAGE FLASH MEMORY 1M-WORD BY 8-BIT Description The ^¡PD29F008AL is a low-voltage 2.2 to 2.7 V, 2.7 to 3.6 V flash memory organized as 8,388,608 bits (1,048,576
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uPD29F008AL
PD29F008AL
40-pin
14157EJ1V
0DS00
PD29F008AL
PD29F008AL.
PD29F008ALGZ-LJH
ATIC 64
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿XPD29F016L 16M-BIT CMOS LOW-VOLTAGE FLASH MEMORY 2M-WORD BY 8-BIT Description The ^¡PD29F016L is a low-voltage 2.2 to 2.7 V, 2.7 to 3.6 V flash memory organized as 16,777,216 bits (2,097,152
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uPD29F016L
16M-BIT
PD29F016L
40-pin
J1V0DS00
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 6 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1856 is a switching device which can be driven directly by a 2.5 V power source.
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uPA1856
D13808EJ1V0DS00
PA1856
13808EJ1V
0DS00
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.
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NE960R5
NE961R500
NE960R500
NE960R575
NE962R575
P14387E
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT LCD CONTROLLER/DRIVER WITH ON-CHIP 1/65 DUTY RAM DESCRIPTION The ,uPD16682 is a LCD driver that includes enough RAM capacity to drive full-dot LCD displays. Each chip can drive a full-dot LCD display consisting of up to 132 x 65 dots.
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uPD16682
S13368E
J1V0DS00
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-nolse, hlgh-gain amplification applications • N F = 1.1 dB,
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2SC5508
2SC5508-T2
Rn/50
13865E
J1V0DS00
0DS00
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PDF
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uss-620
Abstract: No abstract text available
Text: Advance Data Sheet, Rev. 4 October 1997 microelectronics group Lucent Technologies Bell Labs Innovations USS-620 USB Device Controller with DMA Bridge Features 5 V tolerant I/O buffers allows operation in 3 V or 5 V system environment • Full compliance with the Universal Serial Bus
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USS-620
100-pin
16-bit
DS97-108CMPR-04
uss-620
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PDF
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Direct-Rambus-RIMM
Abstract: MC-4R256CEE6B MC-4R256CEE6C uPD488448
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256CEE6B, 4R256CEE6C Direct Rambus DRAM RIMM™ Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module Is a general purpose high-performance memory module subsystem suitable for
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MC-4R256CEE6B,
4R256CEE6C
256M-BYTE
128M-WORD
16-BIT)
4R256CEE6C
uPD488448
600MHz,
800MHz
Direct-Rambus-RIMM
MC-4R256CEE6B
MC-4R256CEE6C
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PDF
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ITE 8512
Abstract: jrm A45 RD2 earth leakage relay TN2E-5V T7903FC 2768B tm4101 Aromat tn2e STT 3 SIEMENS T7903
Text: Preliminary Data Sheet April 1997 m icroelectronics group Lucent Technologies Bell Labs Innovations T7903 ISA Multiport Wide Area Connection ISA-MWAC Device F eatu res • Three wide area connection ports. Each port can be configured as a basic rate ISDN TE or NT or as
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T7903
poT7903
15-bit
SN74LS32)
SN74LS04)
T7903.
CY7C199.
SN74LS174
005002b
ITE 8512
jrm A45
RD2 earth leakage relay
TN2E-5V
T7903FC
2768B
tm4101
Aromat tn2e
STT 3 SIEMENS
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PDF
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dis 5261 b
Abstract: f 4556 la 4548 T7630 T7690 T7698 Z915
Text: Preliminary Data Sheet May 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7698 QuadT1/E1 Line Interface and Octal T1/E1 Monitor Features • Fully integrated quad T1/E1 line transceiver and octal T1/E1 receive framer/monitor with HDLC pro
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T7698
CB119
TR-54016
TR-TSY-000170
TR-TSY-000009
TR-TSY-000499,
TR-TSY-000253;
005002b
100-Pin
dis 5261 b
f 4556
la 4548
T7630
T7690
Z915
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PDF
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WEDSP32C
Abstract: No abstract text available
Text: — * Microelectronics WE DSP32C Digital Signal Processor Introduction Description AT&T is the industry leader in floating-point digital signal processing. AT&T's DSP32 architecture was introduced in 1985 and is now the accepted standard in the speech, signal processing,
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DSP32C
DSP32
32bit,
DSP32,
DS91-051D
005002b
WEDSP32C
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet May 1995 a A T S T ~= ^ ar Microelectronics DSP1618 Digital Signal Processor Features • Optimized for digital cellular applications with a bit manipulation unit and an error correction coprocessor for higher signal coding efficiency ■ 20 ns, 25 ns, and 30 ns instruction cycle times at
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DSP1618
005002b
DSP1618
100-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT jU P D 4 4 4 0 1 6 L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ^¡PD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.
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256K-WORD
16-BIT
PD444016L
44-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC O C M O S FET PS7221A-2A 8-PIN SOP OCMOS FET 2-ch OCMOS FET DESCRIPTION T he P S 7 221 A -2A is a solid state relay con ta in in g G aA s LED s on the light em ittin g sid e (in pu t side) and M O S FETs on the o u tp u t side.
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PS7221A-2A
P14400EJ1V0D
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. ORDERING INFORMATION FEATURES
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2SK3366
2SK3366
O-251
2SK3366-Z
O-252
14256EJ1V
0DS00
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PDF
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0829A
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT jUPD444004 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ,uPD444004 is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The ,uPD444004 is packaged in a 32-pin plastic SOJ and 32-pin plastic TSOP (II).
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jUPD444004
uPD444004
32-pin
PD444004LE-10
PD444004LE-12
0829A
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _ ¿¿PA1759 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. 8 5 FEATURES
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PA1759
PA1759G
13622EJ1V
0DS00
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PDF
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transistor NEC D 586
Abstract: NEC D 586
Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility
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NE321000,
NE29200
NE321000
NE29200
NE321000
P14270E
transistor NEC D 586
NEC D 586
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PDF
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ATT2405
Abstract: ATT2405ABI
Text: Preliminary Data Sheet January 1994 S A W Microelectronics ATT2405ABI Off-Line Power Supply IC Features Description • Direct ac-to-dc conversion The ATT2405ABI is a single-chip power supply designed to convert ac line power to a constant 5 V to 24 Vdc, at an output current of up to 50 mA. Fabri
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ATT2405ABI
DS94-004HVIC
DS93-091HVIC)
ATT2405
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PDF
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ATT ORCA fpga
Abstract: No abstract text available
Text: Preliminary Data Sheet March 1995 i t A 1 ÏX I " 181, Microelectronics ÄTT1700A Series Serial ROM Features Description • 32K, 64K, and 128K x 1 Serial ROMs for configura tion of ATT3000 and ORCA Series FPGAs The ATT1700A Series Serial ROM family provides
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TT1700A
ATT3000
XC1700'
20-pin
current--100
current--10
0DS002b
0D177Sb
ATT1736A
ATT1736A;
ATT ORCA fpga
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PDF
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CW025ABK-M
Abstract: lucent DC-DC POWER MODULE CW025ACL-M A1117 kelvin 1102 lucent DC-DC s4 6ca LUCENT ECS
Text: Data Sheet March 1998 Lucent Technologies Bell Labs Innovations CW025 Triple-Output-Series Power Modules: 36 Vdc to 75 Vdc Input; 25 W Options • Isolated case ground pin ■ Short pins: 2.79 mm ± 0.25 mm 0.110 in. ± 0 .0 1 0 in. ■ Negative logic remote on/off
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CW025
CW025Triple-Output-Series
MHSTxxx45
MHSLxxx45
5002b
CW025ABK-M
lucent DC-DC POWER MODULE
CW025ACL-M
A1117
kelvin 1102
lucent DC-DC
s4 6ca
LUCENT ECS
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PDF
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Untitled
Abstract: No abstract text available
Text: Datasheet October 1997 microelectronics group Lucent Technologies Bell Labs Innovations JC050H, JC075H, JC100H Power Modules: dc-dc Converters; 18 to 36 Vdc Input, 24 Vdc Output; 50 W to 100 W Features • Small size: 61.0 mm x 57.9 mm x 13.1 mm 2.40 in. x 2.28 in. x 0.52 in.
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JC050H,
JC075H,
JC100H
JC100H
JC100H1
JC100H8
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PDF
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