0SDM33 Search Results

Hall Effect 3 pin ugn

Abstract: car pulse hall sensor UGN HALL Sprague Hall Effect sensor hall 4.5 24 pulse Ay hall sensor waveform of hall effect sensor UGS3056U
Contextual Info: AL LE GR O MICROSYSTEMS INC m 0SDM33S D ü G Mñ M T AL GR r-6 £ *-0 5 * AND 27612 U G S 3056 U: HALL EFFECT DIGITAL GEAR-TOOTH SENSORS WITHZERO-RPM CAPABILITY The Sprague Types UGN3056U and UGS3056U Hall effect digital gear-tooth sensors are bipolar integrated circuits that switch ON and

transistor DAG

Contextual Info: ALLEGRO MICROSYSTEMS INC =13 J> • 0SDM33ä G D 0 3 7 D ci 3 ■ ALGR T-91-01 PROCESSJYA Process JYA PNP RF Amplifier Process JYA is a PNP silicon epitaxial planar tran­ sistor designed or use in low-power, high-frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS

D00373

Abstract: GDG3737 A138
Contextual Info: ALLEGRO MICROSYSTEMS INC 13 î • 0SDM33Ô GD03737 fl ■ T-91-01 PROCESS VHB Process VHB PNP High-Voltage Transistor Process V H B is a P N P double-diffused silicon epi­ taxial planar device. It is designed for use in highvoltage amplifier circuits. It is the complement to NPN

Contextual Info: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.

THJ3821

Abstract: NJ16 NJ32 THJ3369 THJ3370 THJ3458 THJ3459 THJ3460 THJ3819 THJ3822
Contextual Info: AL L E GRO MI C ROS Y S T E MS 8514019 SPRAGUE. ^3 I NC D 0SDM336 D O D B S ? 11] S • ALGR ■ SEMICONDS/ IC S 93D 03579 JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oij V(BH)GSS Min. type THJ3369

Contextual Info: BiMOS I I 8-B IT SERIAL-INPUT, LATCHED DRIVERS The merging of low-power CMOS logic and bipolar output power drivers permit the UCN5841/42A, and A5841/42SLW integrated circuits to be used in a wide variety of peripheral power driver applications. Each device has an eight-bit CMOS shift register and CMOS control

Contextual Info: 2 ‘T M P D ’ G EN E R A L -PU R PO SE a n d LOW -LEAKAGE D IO D E S E L E C T R IC A L C H A R A C TER ISTIC S a t T A, = 25°C V Device Type Description Marking •f Max. mA Min. Max. (V) (V) @IF (mA) V BR ■r ‘ rr Max. Max. Co Max. Pinning (nA)

Contextual Info: PRO TEC TED , HIGH-TEMPERATZJKE, OPEN-CO LLECTO R HALL-EFFECT LATC H These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197can provide position and speed information by providing a digital output

ULN2455A

Abstract: ULN pnp ULN-2455A 16 pin diagram of uln 2003 uln 2003 pin diagram ULQ2454M comparator 14 pin Integral ULN2455A ULN/UL2454L7M LED Lamp Driver circuit diagrams
Contextual Info: 27460.10A AU TOM OTIVE LAM P M O NITO RS Capable of monitoring all types of automotive lamps, the ULN2454L, ULQ2454M, and ULN2455A lamp monitors provide multiple LED outputs to pinpoint the area in which a lamp has failed. The ULN2455A is a quad comparator capable of monitoring eight