0G003 Search Results

DSAIH0002547

Contextual Info: B IC C I N T E R N A T I O N A L 3DE D • 1171143 0G00355 0 - ^ C S - O 0! BKC INTERNATIONAL ELECTRONICS, INC. 6 L A K E STREET, LAWRENCE, MA 01841 TEL. NO. 508 6 8 1 - 0 3 9 2 TYPE 1N3070 (SILICON) M A X I M U M RATI N G STORAGE TEMPERATURE: -¿>5C TO + 2 0 0 C

9364

Abstract: 175C 1N4531
Contextual Info: B K C INTERNATIONAL 30E » • 117=^03 0G003Sb 2 ■ "T-Cfé-O0! BKC INTERNATIONAL ELECTRONICS, INC. LAWRENCE, MA. 01841 TEL. 681-0392 DATA SHEET for 1N4531 DO-34 MAXIMUM RATING: V( BR) Io SURGE Top Tstg PW 100V 200mA 1/120S .5A -65C TO +175C -65C TO 20ÖC

8514

Contextual Info: C O N N O R - ld lN F IE L D 4bE CORP D • 2343431 0G0033fl T HCNIil T -5 0 -2 3 AURORA. IL. 60505 CONNOR-WINFIELD CORPORATION PHONE 708 851-4722 FAX (708) 851-5040 J OSCILLATORS 8 PIN DIP HIGH SPEED CMOS CUSTOM FREQUENCIES H42 SPECIFICATIONS Range Frequency

hydrocarbon sensor

Abstract: OPB836 SLOTTED OPTICAL SENSOR 41511
Contextual Info: OPTEK TECHNOLOGY INC ObE D | bTTflSöG 0G003b5 3 | Optoelectronlcs'Division TRW Electronic Components Group Product Bulletin 5344 January 1985 T mT w Y _ t - h ' - ' ö S lo tte d Optical S w itc h Type OPB836 + E S + .5 1 0 1 2 .8 5 1

DSAIH0002568

Contextual Info: B K C INTERNATIONAL 30E » • 117=^03 0G003Sb 2 ■ ~T-03-0°l BKC INTERNATIONAL ELECTRONICS, INC. LAWRENCE, MA. 01841 TEL. 681-0392 DATA SHEET for 1N4531 DO-34 MAXIMUM RATING: V( BR) Io SURGE Top Tstg PW 100V 200mA 1/120S .5A -65C TO +175C -65C TO 20ÖC

DSAIH0002555

Contextual Info: B K C INTERNATIONAL 30E D • 117e “=103 0G0033M 3 ■ H T - 0 3 - C > 7 ft Lake Street PO Box 1436 Lawrence, MA USA 01841 BKÇ International Electronics Inc. Telephone 617) 681-0392 • Telefax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE FEATURES

SILONEX INC

Abstract: NSL-810 NSL-792 60N70
Contextual Info: SILONEX INC &255271 0G00310 L 23E D CO SILONEX ’ PACKAGED SILICON PHOTOVOLTAIC CELLS 4 l-S \ C FEA T U R ES • High reliability, long life • Operating Temperature Range: -6 5 ° C to 125°C • Ideal for moderate reverse bias voltage operation • Short circuit current linear over wide ranges of illumination

TX4-100S-D2LT-MH

Abstract: 34B5 TX4-60S-D2LT
Contextual Info: J A E ELECTRONICS INC 21E D • Mû^34b5 0G003ÔS S ■ SOCKET RECEPTACLE, FEMALE WITH MOUNTING EARS TX4-LT-M: Right Angle through hole type With Expansion Posts (H) Without Expansion Posts (N) .146 (3.7) .075(1.905) .075(1.905) .110(2.8) .075(1.905) .138(3.5)

Contextual Info: CONNOR-lilINFIELD C O R P wat» I MbE D • 2343M31 USEO ON NEXT ASSY 0G00374 Ic N ül T-50-23 2 REVISIONS APPLICATION REV. DESCRIPTION BATE- APPROVED HS I EDV54-120-31 155.520MHz, CONTROLVOLTAGE -2 to -3V +/-20ppm 0 to +70 DEGREES C ~55 to +85 DEGREES C +/-60ppm MIN, +/“ 120ppm MAX

marking SUA

Abstract: DSAIH0002559
Contextual Info: B K C INTERNATIONAL 30E D • •• 1 1 7 ^ 0 3 0G003MÔ 3 ■ ' T 0 3 ' D ° | • ■?. ,•45%,;'*. f. '.H' .*• - " ’ BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO. 508 681-0392 TYPE SI 13 METALLURGIALLY BONDED, SILICON PLANAR DIDOE, DOUBLE PLUG CONSTRUCTION

PT-3512

Abstract: PT-3513 TG-63 VBE12 powertech 2U25
Contextual Info: 7HTfl7b4 0G003E3 □ 17E D BIG POWER” BIG IDEAS IN B p • PowerTecn POÜJERTECH INC 70 AM PERES T -3 3 -J5 P T -3 5 1 2 P T -3 5 1 3 HIGH VOLTAGE SILICON NPIM TRANSISTOR FEATURES V C E sat -. , 0 .5 V @ 30 A V B E . 1.2 V @ 30 A

ibek 48 its

Abstract: melcher, uster, switzerland dc dc converter melcher
Contextual Info: MELCHER MELCHER AG, Arkerstrassr- 56, Pnstfach 248. C H-8610 Ustcr. Sw it/er.ind 9B58 MELCHER INC 3TE D m 5T75GbE 0G00314 0 H H C H T^ST^JLL IBEK 48 ITS 2 2 Watt DC-DC Converters W ith in p u t to o u tp u t is o la tio n In p u t: 18. .70 V DC O u tp u t: 5 ,1 2 ,15 V DC

Contextual Info: fc é è M m H M C 140 M IC R O W AV E C O R PO R A TIO N GaAs MMIC DOUBLE-BALANCED MIXER 1.0 - 2.0 GHz FEBRUARY 1998 Features General Description CONVERSION LOSS: 10dB The HMC140 chip is a miniature double­ balanced mixer which can be used as an upconverter or downconverter. The chip is

45db321

Abstract: at45db321 code TSOP-20 9j46 1S558 9P9914
Contextual Info: PAGE 1 OF 5 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-45DB321 FLASH RELIABILITY DATA - EXTENDED TEMPERATURE CYCLE - 121°C/15PSG PRESSURE POT TEST - 150°C RETENTION BAKE (PLASTIC) - 125°C DYNAMIC OPERATING LIFETEST (PLASTIC) JULY 2003 2325 Orchard Parkway San Jose CA. 95131

TMS 2370

Abstract: ZP1400 ZP1006A ZP1006 ZP1300 ZP1220 ZP100 zp1000 ZP1015A ZP1200
Contextual Info: / Transhield ZP1000 and ZP1000A surge suppressors are silicon diffused junction pn devices having unidirectional positive clamping characteristics. Devices are available having tolerances on the nominal breakdown voltages of ± 10% ZP1000 series and ± 5%

ISD1110

Abstract: isd chipcorder application notes ISD1110P chipcorder ISD ChipCorder Application Information ISD11 speaker Veco VOICE REC playback ISD1100 microphone Preamp schematic
Contextual Info: INFORMATION STORAGE C hjpCorder’ TtCHMOioarsrisd D Ë V ic M s ISD1100 S e rie s Single-Chip Voice Record/Playback Device 10-Second Duration FEATURES • Easy-to-use single-chip voice record/ playback solution • Zero-power message storage - Eliminates battery backup circuits

Contextual Info: NEW ENGLAND SEMICONDUCTOR P6KE6.8A thru P6KE200A 600 WATT SILICON TRANSIENT SUPPRESSOR DIODES PA C K A G E OUTLINE AVAILABLE IN VOLTAGES FROM 6.8 V THRU 200 V The NES P6KE6.8A to P6KE200A series o f Silicon Transient Voltage Suppressor are designed for commercial applications where large voltage transients can

C8808

Abstract: DDD0304 IRF221 T-39 A2TE
Contextual Info: it9 . 8 3 68 60 2 S O L I T RO N D EV IC ES INC - bl M *• DE | Û3bôb0a DDG0304 o' § 0 l i t r 0 n H_ T-39^11 SFÜ204B3 . D E V I C E S . IN C. POWER IV30S DEVICE 1 5 0 V /5 A N Channel, TO-3 Package, IRF221 equivalent

EPITAXX ETX 75

Abstract: EPITAXX ETX 100 RFC 2 TO18 package LED 1300 nm ERM500 radiall connector rfc-m 10 1300RFC InGaAs 1550 photodiode transimpedance amplifier EPITAXX etx 40
Contextual Info: ETX 1300RFC, ETX 1300RST ETX 1300FJ, ETX 1300FC 1300 nm H igh Power ELED Modules Features •High coupled power 75 ¿iW typical into multimode ■High speed response (3.5 ns typical) ■Narrow emission spectrum (60 nm typ.) ■Singlemode and multimode versions

788754-2

Abstract: 788754-4
Contextual Info: LO -Y - 3 0 .8 0 i0 .3 8 r«oo 00 hI u -X - # 4 - 4 0 UNC " P 0 S N #1 ^ D CM h- 0 3 .1 8 ± O .O 8 / O uu CN X Y o 'a 0 0 .1 0 @ X Y 9 PLC RECOMMENDED PCB LAYOUT TOP VIEW (PC BOARD THICKNESS: 1.57[.062]) A o cn tj 1.385±0.25 A 9 PLC A CO o o -H U _l

zenamic 220

Abstract: zenamic 910-820 zenamic Z 330 Oneida Electronic MFG Transient Voltage Suppressors 340 V 0Z7L101 0Z7L121 0Z7L220 0Z7L270
Contextual Info: ONEIDA ELECTRONIC MFfi INC 6792335 Sfl ONEI DA ELECTRONI C d ËT| ^,7^335 D0DD3DD 7 f MFG INC 58C 0 0 3 0 Ô T - / / - ¿ S #4 Data Sheet No. a - i o i nelda F 1 Ie # E 7 l2 2 ° Z e n a m ia * Z-MOV Transient Voltage Suppressors Z7, ZIO, ZI5.Z2I.&Z33 SERIES

Contextual Info: BZY91 / Z6 SERIES Voltage Range 7.5 - 400 Volts 5000 Watt Peak Pulse Power 100 Watt Steady State @ 25*C 75 Watt Steady State @ 65°C FEATURES * Glass Passivated Junction * 5000 Watt surge capability at 1 mS * Typically IR less than luA above 10V * Excellent clamping capability

MT5C1008

Abstract: ET 2314 J937
Contextual Info: AUSTIN SEMICONDUCTOR INC büE D • *1002117 0000327 124 M A U S T I MT5C1008 DIE 128K X 8 SRAM I^ IIC R O N 128Kx 8 SRAM MILITARY SRAM DIE WITH DUAL CHIP ENABLE FEATURES DIE OUTLINE Top View 21 1 1 1 1 1 1 1 1 1 0 9 8 7 6 5 4 3 2 1 0 9 8 7 6 5 4 3 2 OOOOOOODOO OO OOO OO OO

8J9903

Abstract: 9H4540 9J0004 9H2318 9G9932 9j47491 9h3290 7s9749 9H9947
Contextual Info: PAGE 1 OF 9 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-49BV8192A FLASH RELIABILITY DATA - 125°C OPERATING LIFE TEST (PLASTIC) - 150°C RETENTION BAKE (PLASTIC) - 121°C/15PSI PRESSURE POT TEST - EXTENDED TEMPERATURE CYCLE - 131°C/85% RELATIVE HUMIDITY HAST TEST